| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
487 pcs
|
487 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| SVHC Present | |
| Storage Temperature |
The 2N3019 is a JEDEC registered, low-power NPN silicon transistor designed for high-reliability applications. It features a TO-5 package and is military qualified per MIL-PRF-19500/391 with available JAN, JANTX, JANTXV, and JANS levels.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of 80V, a Collector-Base Voltage (VCBO) of 140V, and a maximum Collector Current (IC) of 1A. The device has a maximum power dissipation of 0.8W at an ambient temperature of +25°C and 5W at a case temperature of +25°C.
Thermal properties include a junction-to-ambient thermal resistance (RΘJA) of 195 °C/W and a junction-to-case thermal resistance (RΘJC) of 30 °C/W. The operating and storage temperature range is -65°C to +200°C.
This transistor is RoHS compliant by design and is suitable for military and other high-reliability applications requiring a lightweight, low-power component.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V.
TO-5 with long leads.
200°C.
1A.
5W.
30°C/W.
Through hole.