| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
750 pcs
|
750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Power Dissipation |
The 2SK851 from Toshiba is a transistor designed for various electronic applications. It features a minimum breakdown voltage of 200V and a drain-source resistance of 85mΩ. The component has a power dissipation rating of 150W.
This transistor is specified with 3 terminals. It is noted as RoHS3 Compliant, with an MSL rating of 1 Unlimited and REACH Unaffected status.
Additional specifications such as gate-source voltage, drain current, operating temperature, package type, and mounting type are not detailed in the available information and would typically be found in the datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage for the 2SK851 transistor is 200V.
The minimum drain-source resistance of the 2SK851 transistor is 85mΩ.
The 2SK851 transistor has a power dissipation of 150W.
The 2SK851 transistor has 3 terminals.
