| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13 pcs
|
13 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Power Dissipation |
The Toshiba 2SD2155 is a bipolar junction transistor (BJT) belonging to the single, pre-biased category. It offers a high maximum collector current of 15A and a significant collector-emitter voltage rating of 180V, making it suitable for power switching and amplification applications.
With a power dissipation capability of 150W and a maximum operating temperature of 150°C, this transistor is built for demanding environments. The device features 3 terminals and is specified with a collector-emitter saturation voltage of 2V.
This component is classified under discrete semiconductor products and is suitable for general-purpose electronic circuits where reliable power handling is essential. Its specifications suggest utility in power supply regulation, audio amplification, and motor control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SD2155 transistor is 15A.
The collector-emitter voltage rating for the 2SD2155 is 180V.
The power dissipation of the 2SD2155 transistor is 150W.
The maximum operating temperature for the 2SD2155 is 150°C.
The 2SD2155 transistor is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) for the 2SD2155 is 1 Unlimited.
