| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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21 pcs
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21 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SD1565 from NEC is an NPN Darlington power transistor suitable for low-frequency power amplification and low-speed switching applications. It features a high collector-emitter breakdown voltage of 100V and a continuous collector current rating of 5A. The device boasts a minimum DC current gain (hFE) of 2000 at IC=2A, VCE=2V, with a peak current capability of 10A. Its absolute maximum ratings include a junction temperature of 150°C and a storage temperature range of -55°C to 150°C. The transistor exhibits a collector-emitter saturation voltage of 1.5V typical at IC=2A, IB=2mA, and a base-emitter saturation voltage of 2.0V typical under the same conditions. Switching characteristics include a turn-on time of 1.0μs, storage time of 3.5μs, and fall time of 1.2μs under specified test conditions. Power dissipation is rated at 2W at 25°C ambient temperature and 30W at 25°C case temperature.
Designed for general electronic equipment, the 2SD1565 is not intended for applications requiring specialized quality, reliability, or use in hazardous environments, aerospace, or medical fields. Its robust device performance and reliable operation are supported by minimum lot-to-lot variations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) of the 2SD1565 is a minimum of 100V.
The maximum continuous collector current (IC) for the 2SD1565 is 5A.
The minimum DC current gain (hFE) of the 2SD1565 at IC=2A and VCE=2V is 2000, with a typical value of 20000.
The typical switching times for the 2SD1565 are 1.0μs for turn-on, 3.5μs for storage, and 1.2μs for fall time.
The maximum junction temperature (TJ) for the 2SD1565 is 150°C.
