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34 pcs
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34 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SC3306 from Toshiba is an NPN power transistor engineered for high-speed switching and high-voltage applications. It boasts a high collector-emitter breakdown voltage of 400V (minimum) and a collector-base breakdown voltage of 500V.
This transistor is suitable for applications such as switching regulators and high-speed DC-DC converters. It can handle a continuous collector current of up to 10A and a pulse collector current of 15A. The power dissipation is rated at 100W at a case temperature of 25℃.
Key electrical characteristics include a collector-emitter saturation voltage of 1.5V (maximum) at 5A collector current and 0.5A base current. The DC current gain (hFE) is a minimum of 10 at 5A collector current and 5V collector-emitter voltage. Switching times are also specified, with turn-on time, storage time, and fall time all at 1.0μs or 2.5μs under specific test conditions.
The operating temperature range is from -55℃ to 150℃, with a junction temperature limit of 150℃. The component is designed for reliability in demanding switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (V(BR)CEO) for the 2SC3306 is 400V.
The 2SC3306 can handle a continuous collector current of up to 10A.
The maximum power dissipation (PC) for the 2SC3306 at a case temperature of 25℃ is 100W.
The 2SC3306 is designed for switching regulator and high voltage switching applications, as well as high speed DC-DC converter applications.
The storage temperature range for the 2SC3306 is -55℃ to 150℃.
