| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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145 pcs
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145 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ROHM Semiconductor 2SB1186A is a general-purpose PNP silicon power transistor suitable for switching applications. It is housed in a TO-220FP package with a flange mount.
Key electrical specifications include a maximum collector current of 1.5 A and a maximum collector-emitter voltage of 160 V. The transistor exhibits a minimum DC current gain (hFE) of 60. The element material is silicon, and the transistor polarity is PNP.
This component is designed for through-hole mounting and features tin/tin copper terminal finish. The package body material is plastic/epoxy. The device is RoHS3 compliant and lead-free.
This power transistor is a reliable choice for various electronic circuits requiring switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (IC) for the 2SB1186A is 1.5 A.
The maximum collector-emitter voltage for the 2SB1186A is 160 V.
The minimum DC current gain (hFE) for the 2SB1186A is 60.
The 2SB1186A is a general-purpose power PNP silicon transistor.
The 2SB1186A is supplied in a TO-220FP package.
The 2SB1186A is RoHS3 Compliant.