| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,358 pcs
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6358 pcs | On Request | 1 | On Request | On Request | 2018+ | On Request | On Request |
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The Toshiba TK13J65U is a general-purpose power MOSFET featuring an N-channel configuration with a built-in diode. It is designed for switching applications and operates with an enhancement mode.
Key electrical specifications include a minimum breakdown voltage of 650V and a maximum continuous drain current of 13A. The maximum drain-source on-resistance is rated at 0.38 ohm. The device also has an avalanche energy rating (Eas) of 86 mJ and a pulsed drain current (IDM) of 26A.
This MOSFET utilizes Metal-Oxide-Semiconductor (MOS) FET technology. It is housed in a TO-3P(N) package with a flange mount style and through-hole termination. The component has 3 terminals and is configured as a single element.
Environmental compliance includes RoHS3 compliance, an MSL rating of 1, and REACH unaffected status. This component is suitable for various power switching designs.
The minimum breakdown voltage is 650V.
The maximum continuous drain current is 13A.
The maximum drain-source on-resistance is 0.38 ohm.
It has an N-CHANNEL type.
It is supplied in a TO-3P(N) package.