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TK1Q90A The Toshiba TK1Q90A is an N-Channel Power MOSFET designed for switching applications. It features a 900V breakdown voltage and 1A maximum drain current.
Mfr Part #:

TK1Q90A

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK1Q90A is an N-Channel Power MOSFET designed for switching applications. It features a 900V breakdown voltage and 1A maximum drain current.
✓ Total Stock: 22,000 pcs

TK1Q90A Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
14,000 pcs
On Request
14000 pcs On Request 1 On Request On Request 1051+ On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
8,000 pcs
On Request
8000 pcs On Request 1 On Request On Request 11+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TK1Q90A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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TK1Q90A Description

Short technical summary and product information.

The Toshiba TK1Q90A is a general-purpose power MOSFET with an N-channel configuration and built-in diode. It is designed for switching applications and operates with an enhancement mode.

 

Key electrical specifications include a minimum breakdown voltage of 900V and a maximum continuous drain current of 1A. The maximum drain-source on-resistance is 9 ohms, with a pulsed drain current capability of up to 3A. The avalanche energy rating (Eas) is 216 mJ.

 

This MOSFET utilizes Metal-Oxide Semiconductor (MOS) FET technology and is constructed from silicon. It has 3 terminals and is housed in a rectangular plastic/epoxy package.

 

The TK1Q90A is suitable for various power switching applications where high voltage and moderate current handling are required. Its flange mount termination style facilitates integration into power circuits.

TK1Q90A Quick Information

Product Type: Power MOSFET
Canonical Name: Toshiba TK1Q90A N-Channel Power MOSFET
Subcategory: N-Channel

TK1Q90A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK1Q90A Features

  • 900V minimum breakdown voltage.
  • 1A maximum continuous drain current.
  • 9 ohm maximum drain-source on-resistance.
  • N-Channel MOSFET with built-in diode.
  • Flange mount, through-hole package.

TK1Q90A Applications

  • Used in high-voltage switching power supplies.
  • Suitable for AC-DC converter circuits.
  • Ideal for motor drive inverters.
  • Applicable in lighting ballast systems.
  • Used in industrial power control.

TK1Q90A FAQs

5 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the TK1Q90A MOSFET?

The minimum breakdown voltage for the TK1Q90A MOSFET is 900 V.

What is the maximum continuous drain current for the TK1Q90A?

The maximum continuous drain current (ID) for the TK1Q90A is 1 A.

What is the on-resistance of the TK1Q90A MOSFET?

The maximum drain-source on-resistance (RDS(on)) for the TK1Q90A is 9 ohm.

What type of channel does the TK1Q90A MOSFET have?

The TK1Q90A MOSFET has an N-channel type.

What is the package type for the TK1Q90A?

The TK1Q90A is supplied in a 2-7J2S package with a flange mount style.

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