Mfr Part #:

TK16A55D

Mfr Name: Toshiba

The Toshiba TK16A55D is an N-Channel Power MOSFET designed for switching applications. It features a 550V breakdown voltage and a 16A maximum drain current.

✓ Total Stock: 38,800 pcs

TK16A55D Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	38,800 pcs On Request	38800 pcs	On Request	1	On Request	On Request	12+	On Request	On Request

TK16A55D Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Toshiba
Channel Type	N-CHANNEL
Configuration	SINGLE WITH BUILT-IN DIODE
Mounting Type	FLANGE MOUNT
Operating Mode	ENHANCEMENT
Package / Case	TO-220AB
Transistor Type	GENERAL PURPOSE POWER

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TK16A55D Description

Short technical summary and product information.

The Toshiba TK16A55D is a general-purpose power MOSFET with an N-channel configuration and built-in diode. It is designed for switching applications and operates in enhancement mode.

Key electrical specifications include a minimum breakdown voltage of 550V and a maximum continuous drain current of 16A. The maximum pulsed drain current is rated at 64A, with a maximum drain-source on-resistance of 0.33 ohm. The avalanche energy rating (Eas) is 528 mJ.

This MOSFET utilizes Metal-Oxide Semiconductor (MOS) FET technology. It is housed in a TO-220AB package with a flange mount. The package body material is plastic/epoxy, and the shape is rectangular. The termination form is through-hole.

This component is suitable for various power switching applications where high voltage and current handling are required.

TK16A55D Quick Information

Product Type: MOSFET

Canonical Name: Toshiba TK16A55D N-Channel Power MOSFET

Subcategory: N-Channel Power MOSFET

TK16A55D Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

TK16A55D Features

550V minimum breakdown voltage.
16A maximum continuous drain current.
0.33 ohm maximum drain-source on-resistance.
TO-220AB package with flange mount.
N-Channel enhancement mode operation.

TK16A55D Applications

Switching power supplies and converters.
Motor control and drive circuits.
Power management in industrial equipment.
High voltage DC-DC converters.
General purpose power switching applications.

TK16A55D FAQs

7 frequently asked questions generated from this part’s specifications.

What is the breakdown voltage of the TK16A55D?

The minimum breakdown voltage is 550V.

What is the maximum drain current rating?

The maximum continuous drain current is 16A, and the pulsed drain current is 64A.

What is the drain-source on-resistance?

The maximum drain-source on-resistance is 0.33Ω.

What is the avalanche energy rating?

The avalanche energy rating is 528 mJ.

What is the package type of the TK16A55D?

The package is TO-220AB with through-hole mounting.

What is the channel type of this MOSFET?

The channel type is N-channel.

What is the operating mode of the TK16A55D?

The operating mode is enhancement mode.