Mfr Part #:

TK11A60D

Mfr Name: Toshiba

The Toshiba TK11A60D is an N-Channel Power MOSFET designed for switching applications. It offers a 600V breakdown voltage and 11A maximum drain current.

✓ Total Stock: 23,842 pcs

TK11A60D Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	22,868 pcs On Request	22868 pcs	On Request	1	On Request	On Request	15+	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	974 pcs On Request	974 pcs	On Request	1	On Request	On Request	11+	On Request	On Request

TK11A60D Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Toshiba
Channel Type	N-CHANNEL
Configuration	SINGLE WITH BUILT-IN DIODE
Mounting Type	FLANGE MOUNT
Operating Mode	ENHANCEMENT
SVHC Present	Not Present
Transistor Type	GENERAL PURPOSE POWER

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TK11A60D Description

Short technical summary and product information.

The Toshiba TK11A60D is a general-purpose power MOSFET featuring an N-channel configuration with a built-in diode. It is designed for switching applications and operates in enhancement mode.

Key electrical specifications include a minimum breakdown voltage of 600V and a maximum continuous drain current of 11A, with a pulsed drain current capability of up to 44A. The drain-source on-resistance is a maximum of 0.65 ohms. It also has an avalanche energy rating (Eas) of 396 mJ.

This MOSFET utilizes Metal-Oxide Semiconductor (MOS) FET technology. It is housed in an SC-67 package with a flange mount style and through-hole termination. The package body material is plastic/epoxy, and the shape is rectangular.

This component is suitable for various power switching applications where high voltage and current handling are required.

TK11A60D Quick Information

Product Type: MOSFET

Series: TK11A60D

Canonical Name: Toshiba TK11A60D N-Channel Power MOSFET

Subcategory: N-Channel Power MOSFET

TK11A60D Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

TK11A60D Features

600V minimum breakdown voltage.
11A maximum continuous drain current.
0.65 ohm maximum drain-source on-resistance.
SC-67 package with flange mount.
N-channel enhancement mode MOSFET.

TK11A60D Applications

Suitable for power supply switching circuits.
Used in motor control applications.
Ideal for high-voltage DC-DC converters.
Designed for general purpose power switching.

TK11A60D FAQs

6 frequently asked questions generated from this part’s specifications.

What is the breakdown voltage of the TK11A60D?

The minimum breakdown voltage is 600 V.

What is the maximum continuous drain current for the TK11A60D?

The maximum continuous drain current is 11 A.

What is the maximum on-resistance of the TK11A60D?

The maximum drain-source on-resistance is 0.65 ohm.

What package type is the TK11A60D supplied in?

The TK11A60D is supplied in an SC-67 package.

What is the RoHS status of the TK11A60D?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the TK11A60D?

The Moisture Sensitivity Level is 1 Unlimited.

TK11A60D Alternate Parts

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The Toshiba TK9A55DA is an N-channel power MOSFET designed for switching applications. It features a 550V breakdown voltage and 8.5A maximum drain current.

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