| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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The Toshiba TK9A55DA is a general-purpose N-channel power MOSFET. It is designed for switching applications and offers a minimum breakdown voltage of 550V and a maximum continuous drain current of 8.5A.
This MOSFET has a maximum drain-source on-resistance of 0.86 ohm and a pulsed drain current capability of 34A. It also features an avalanche energy rating of 252 mJ.
The device utilizes METAL-OXIDE SEMICONDUCTOR (MOSFET) technology and operates in enhancement mode. It is housed in a SC-67 package with a flange mount style and through-hole termination.
The TK9A55DA is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
The minimum breakdown voltage for the TK9A55DA is 550V.
The maximum continuous drain current (ID) for the TK9A55DA is 8.5A.
The maximum drain-source on-resistance for the TK9A55DA is 0.86 ohm.
The TK9A55DA is supplied in an SC-67 package.
The TK9A55DA is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the TK9A55DA is 1 Unlimited.