TK9A55DA The Toshiba TK9A55DA is an N-channel power MOSFET designed for switching applications. It features a 550V breakdown voltage and 8.5A maximum drain current.
Mfr Part #:

TK9A55DA

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK9A55DA is an N-channel power MOSFET designed for switching applications. It features a 550V breakdown voltage and 8.5A maximum drain current.
Total Stock: 3,000 pcs

TK9A55DA Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 12+ On Request On Request

TK9A55DA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Channel Type
Configuration
Lead Style
Mounting Type
Number of Elements
Operating Mode
SVHC Present
Transistor Type

TK9A55DA Description

Short technical summary and product information.

The Toshiba TK9A55DA is a general-purpose N-channel power MOSFET. It is designed for switching applications and offers a minimum breakdown voltage of 550V and a maximum continuous drain current of 8.5A.

 

This MOSFET has a maximum drain-source on-resistance of 0.86 ohm and a pulsed drain current capability of 34A. It also features an avalanche energy rating of 252 mJ.

 

The device utilizes METAL-OXIDE SEMICONDUCTOR (MOSFET) technology and operates in enhancement mode. It is housed in a SC-67 package with a flange mount style and through-hole termination.

 

The TK9A55DA is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

TK9A55DA Quick Information

Product Type: Power MOSFET
Series: TK
Canonical Name: Toshiba TK9A55DA N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

TK9A55DA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK9A55DA Features

  • 550V minimum breakdown voltage.
  • 8.5A maximum continuous drain current.
  • 0.86 ohm maximum drain-source on-resistance.
  • SC-67 package with flange mount.
  • Designed for switching applications.

TK9A55DA Applications

  • Suitable for high-voltage power switching applications.
  • Used in isolated flange-mount power supply designs.
  • Ideal for general purpose power MOSFET switching circuits.
  • Supports pulsed current loads up to 34 A.
  • Applicable in single-element N-channel enhancement mode circuits.

TK9A55DA FAQs

6 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the TK9A55DA?

The minimum breakdown voltage for the TK9A55DA is 550V.

What is the maximum continuous drain current for the TK9A55DA?

The maximum continuous drain current (ID) for the TK9A55DA is 8.5A.

What is the maximum on-resistance of the TK9A55DA?

The maximum drain-source on-resistance for the TK9A55DA is 0.86 ohm.

What package type is the TK9A55DA supplied in?

The TK9A55DA is supplied in an SC-67 package.

What is the RoHS status of the TK9A55DA?

The TK9A55DA is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the TK9A55DA?

The Moisture Sensitivity Level (MSL) for the TK9A55DA is 1 Unlimited.

Home
Account

Categories