| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | 00+02 | On Request | On Request |
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The CENTRAL SEMICONDUCTOR 2N3114 is an NPN Silicon Transistor designed for general purpose amplifier applications. It is housed in a hermetically sealed TO-39 package.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 150V and a continuous collector current (IC) of up to 200mA. The device offers a power dissipation of 0.8W at 25°C ambient temperature, and up to 5.0W when the case temperature is 25°C. The operating and storage junction temperature range is from -65°C to +200°C.
Electrical specifications include a minimum DC current gain (hFE) of 15 at VCE=10V and IC=0.1mA, and a range of 30-120 at VCE=10V and IC=30mA. The transition frequency (fT) is a minimum of 40MHz at VCE=10V and IC=30mA. Saturation voltages are also specified, with VCE(SAT) at a maximum of 1.0V and VBE(SAT) at a maximum of 0.9V under specific test conditions.
This transistor is suitable for various general-purpose amplification tasks where its specific voltage, current, and gain characteristics are beneficial. The TO-39 package is a common metal can package suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 150 V.
The maximum continuous collector current (IC) is 200 mA.
The 2N3114 is housed in a TO-39 package.
The operating and storage junction temperature range is -65°C to +200°C.
The DC current gain (hFE) is 30-120 at VCE=10V, IC=30mA.
The minimum transition frequency (fT) is 40 MHz at VCE=10V, IC=30mA.
