| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,160 pcs
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3160 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N1711 from Continental Device India Ltd (CDIL) is a general-purpose NPN silicon planar transistor. It comes in a TO-39 metal can package, suitable for through-hole mounting.
Key electrical characteristics include a collector-emitter voltage (VCE) of up to 50V and a DC current gain (hFE) ranging from 100 to 300 at 150mA collector current. The transition frequency (fT) is 70 MHz minimum at 50mA collector current and 10V VCE. It also features a maximum power dissipation of 800mW at 25°C ambient temperature and 3W at 25°C case temperature.
This transistor is designed for general-purpose applications. Its specifications make it suitable for various switching and amplification tasks in electronic circuits. The TO-39 package offers good thermal performance for its size.
Additional electrical parameters include collector cut-off current (ICBO) of 10nA maximum and emitter cut-off current (IEBO) of 5nA maximum. Saturation voltages are also specified, with VCE(sat) at 0.5V maximum and VBE(sat) at 1.3V maximum under specific test conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCER) for the 2N1711 transistor is 50V.
The DC current gain (hFE) of the 2N1711 at 150mA collector current and 10V VCE ranges from 100 to 300.
The minimum transition frequency (fT) for the 2N1711 transistor is 70 MHz.
The 2N1711 transistor comes in a TO-39 metal can package.
The operating and storage junction temperature range for the 2N1711 transistor is -65 to +200 °C.