| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
464 pcs
|
464 pcs | On Request | 1 | On Request | On Request | 82+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type |
The RAYTHEON 2N1132 is a low-power PNP silicon transistor, qualified per MIL-PRF-19500/177. It is designed for a variety of electronic applications requiring reliable bipolar transistor performance.
Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of 40 Vdc and a collector-base breakdown voltage (VCBO) of 50 Vdc. The maximum continuous collector current (IC) is 600 mAdc. The transistor exhibits a forward current transfer ratio (hFE) ranging from 15 to 90 depending on the operating conditions.
Thermal performance is supported by a total power dissipation rating of 0.6W at 25°C ambient temperature and 2.0W at 25°C case temperature. The operating and storage temperature range is -65°C to +200°C.
Packaged in a TO-39 case, the 2N1132 is suitable for through-hole mounting. Its dynamic characteristics include output capacitance (Cobo) up to 45 pF and input capacitance (Cibo) up to 80 pF. Switching characteristics show a turn-on and turn-off time of 50 ηs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N1132 transistor is 40 Vdc.
The maximum continuous collector current (IC) for the 2N1132 is 600 mAdc.
The operating and storage temperature range for the 2N1132 transistor is -65 to +200 °C.
The 2N1132 transistor is supplied in a TO-39 package.
The collector-emitter saturation voltage (VCE(sat)) for the 2N1132 is a maximum of 1.3 Vdc.
The input capacitance (Cibo) of the 2N1132 transistor is a maximum of 80 pF.
The turn-on time plus turn-off time for the 2N1132 transistor is 50 ηs.
