| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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88 pcs
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88 pcs | On Request | 1 | On Request | On Request | 8144 | On Request | On Request |
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| SVHC Present |
The Raytheon 2N1131 is a silicon PNP transistor suitable for medium current switching applications. It is housed in a hermetically sealed TO-39 package.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 35V and a maximum continuous collector current (IC) of 0.6A. The transistor offers a minimum forward current transfer ratio (hFE) of 15, with a range of 20-45 under specific test conditions. Its transition frequency (fT) is 50 MHz.
The device operates within a junction temperature range of -65°C to +200°C. Power dissipation is rated at 2.0W at 25°C case temperature and 0.6W at 25°C ambient temperature.
This transistor is designed for general-purpose switching and amplification tasks where PNP silicon characteristics are required. The TO-39 package is a common metal can package suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (V_CEO) for the 2N1131 is 35 V.
The maximum Continuous Collector Current (I_C) for the 2N1131 is 0.6 A.
The maximum Power Dissipation (P_D) for the 2N1131 is 0.6 W.
The operating and storage junction temperature range for the 2N1131 is -65 to +200 °C.
The minimum Transition Frequency (f_T) for the 2N1131 is 50 MHz.
The 2N1131 is available in a TO-39 package.
The 2N1131 features through-hole mounting.