| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N1132 is a low-power PNP silicon transistor from Motorola Semiconductor, qualified per MIL-PRF-19500/177. It offers a collector-emitter voltage (VCEO) of 40V and a collector current (IC) capability of up to 600 mAdc.
Key electrical characteristics include a forward current transfer ratio (hFE) ranging from 20 to 45 at IC = 150 mAdc and VCE = 10V. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 1.3Vdc, and the base-emitter saturation voltage (VBE(sat)) is a maximum of 1.5Vdc.
Dynamic characteristics include a small-signal short circuit forward-current transfer ratio (hfe) of 15 to 50 at 1 kHz and 20 to 90 at 1 kHz. Output capacitance (Cobo) is 45 pF, and input capacitance (Cibo) is 80 pF.
This transistor is available in TO-39 and TO-5 packages, suitable for through-hole mounting. It operates across a wide temperature range from -65°C to +200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N1132 is 40 Vdc.
The maximum collector current (IC) for the 2N1132 is 600 mAdc.
The operating and storage temperature range for the 2N1132 is -65 to +200 °C.
The 2N1132 is available in TO-39 and TO-5 packages.
The forward current transfer ratio (hFE) for the 2N1132 ranges from 20 to 45 at IC = 150 mAdc, VCE = 10 Vdc, and from 15 to 90 at IC = 5.0 mAdc, VCE = 10 Vdc.
The collector-emitter saturation voltage (VCE(sat)) for the 2N1132 is a maximum of 1.3 Vdc.
The input capacitance (Cibo) of the 2N1132 is a maximum of 80 pF.
