| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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18 pcs
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18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Raytheon 2N2102 is a silicon NPN epitaxial planar transistor designed for high current general purpose switching applications. It is housed in a TO-39 metal case.
Key electrical characteristics include a Collector-Base Voltage (VCBO) of 120V, a Collector-Emitter Voltage (VCEO) of 65V, and a continuous Collector Current (IC) of 1.0A. The device offers a maximum Power Dissipation of 5.0W at 25°C (TC) and 1.0W (PD). Its transition frequency (fT) is 60 MHz at VCE=10V and IC=50mA.
Thermal specifications include a Junction-Ambient thermal resistance (ΘJA) of 175 °C/W and a Junction-Case thermal resistance (ΘJC) of 35 °C/W. The operating and storage junction temperature range is -65°C to +200°C.
This transistor is intended for a wide variety of small-signal and medium power applications in military and industrial equipment. Its TO-39 package is suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 65V, and the maximum collector-emitter voltage with base resistor (VCER) is 80V.
The maximum continuous collector current is 1A.
The 2N2102 is housed in a TO-39 package.
The operating and storage junction temperature range is -65°C to +200°C.
The minimum transition frequency (fT) is 60 MHz at Vce=10V and Ic=50mA.
The DC current gain ranges from 40 to 200 at Vce=10V and Ic=150mA.