| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The 2N2102 from Philips is a silicon NPN epitaxial planar transistor suitable for high current general purpose switching applications. It is housed in a TO-39 metal case.
Key electrical characteristics include a maximum Collector-Emitter Voltage (VCEO) of 65V and a maximum Collector-Base Voltage (VCBO) of 120V. The continuous collector current (IC) is rated at 1.0A. The device exhibits a transition frequency (fT) of 60MHz at 20MHz.
Thermal specifications include a maximum junction-to-case thermal resistance (ΘJC) of 35 °C/W and a junction-to-ambient thermal resistance (ΘJA) of 175 °C/W. The operating and storage junction temperature range is from -65°C to +200°C.
This transistor is designed for a wide variety of small-signal and medium power applications in military and industrial equipment. Its TO-39 package is suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N2102 is 65V.
The maximum continuous collector current (IC) for the 2N2102 is 1A.
The transition frequency (fT) of the 2N2102 is 60MHz.
The 2N2102 is available in a TO-39 metal case package.
The RoHS status of the 2N2102 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2N2102 is Level 1.