IRF100P219
Infineon
The Infineon IRF100P219 is an N-channel power MOSFET designed for industrial applications. It offers a 100V drain-source voltage and a low on-resistance of 1.7 mΩ.
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96 pcs
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96 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2193 is a silicon NPN transistor designed for general-purpose applications. Manufactured by Texas Instruments, this component is housed in a TO5 package and is suitable for through-hole mounting.
Key electrical specifications include a maximum collector-emitter voltage (Vce) of 50V and a maximum collector-base voltage (Vcb) of 80V. The maximum continuous collector current (Ic) is 1A, with a maximum collector current leakage (Icbo) of 10nA at maximum Vcb. The forward current transfer ratio (hFE) is typically 30, with a minimum of 40 specified. The transition frequency (ft) is a minimum of 50MHz at 10V Vce and 10mA Ic.
Thermal characteristics include a maximum power dissipation of 800mW (or 0.8W) and a power dissipation derating of 4.6mW/°C at ambient temperature. The maximum operating junction temperature (Tj) is 200°C, with a maximum case operating temperature of 175°C.
This transistor is suitable for various electronic circuits requiring amplification or switching capabilities. Its TO5 package and through-hole mounting make it compatible with traditional PCB assembly processes.
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| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the 2N2193 is 50V.
The maximum collector current for the 2N2193 is 1A.
The typical forward current transfer ratio (hFE) of the 2N2193 is 30.
The transition frequency (ft) of the 2N2193 is a minimum of 50MHz.
The maximum operating temperature for the 2N2193 is 175°C.
The 2N2193 is available in a TO5 package.
The RoHS status for the 2N2193 is RoHS3 Compliant.
