| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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500 pcs
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500 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The Diodes Incorporated 2DB1132Q is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It is housed in a compact TO-243AA (SOT-89-3) package, designed for surface mounting.
Key electrical specifications include a collector-emitter breakdown voltage of 32V and a maximum continuous collector current of 1A. The transistor offers a minimum DC current gain (hFE) of 120 at 100mA and 3V, with a Vce saturation of 500mV maximum at 50mA/500mA. Its transition frequency is 190MHz, and it has a maximum power dissipation of 1W.
The operating temperature range for this device is -55°C to 150°C (TJ). It is qualified to AEC-Q101 standards, indicating suitability for automotive applications. The transistor is supplied in tape and reel packaging.
This component is ideal for general-purpose amplification and switching tasks where a surface-mount PNP transistor is required. Its robust operating temperature range and automotive qualification make it a reliable choice for demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 32V.
The maximum continuous collector current is 1A.
The minimum DC current gain (hFE) is 120 at 100mA and 3V.
The operating temperature range is -55°C to 150°C.
The 2DB1132Q is supplied in a TO-243AA (SOT-89-3) package for surface mounting.
Yes, the 2DB1132Q is qualified to AEC-Q101 standards.
