| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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12,500 pcs
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12500 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| SVHC Present | |
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| Transistor Type |
The Diodes Incorporated DCX52-16 is a PNP bipolar junction transistor (BJT) suitable for various electronic circuits. It offers a maximum collector current of 1A and a collector-emitter breakdown voltage of 60V. The transistor operates within a temperature range of -55°C to 150°C.
This component is housed in a surface-mount TO-243AA (SOT-89-3) package, making it convenient for automated assembly processes. Its typical DC current gain (hFE) is 100 at 150mA and 2V, with a Vce saturation of 500mV at 50mA and 500mA. The transition frequency is 200MHz.
Key electrical characteristics include a maximum power dissipation of 1W and a collector cutoff current of 100nA. The DCX52-16 is designed for applications requiring a reliable PNP switching or amplification component in a compact surface-mount form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 60V.
The maximum continuous collector current is 1A.
The operating junction temperature range is -55°C to 150°C.
The DCX52-16 is available in a TO-243AA package which is equivalent to SOT-89-3 for surface mount.
The transition frequency is 200 MHz.
The maximum power dissipation is 1W.