| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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| Manufacturer Name | |
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| SVHC Present | |
| Supplier Device Package | |
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| Vce Saturation (Max) |
The Diodes Incorporated DCX52-13 is a PNP bipolar junction transistor (BJT) suitable for various electronic circuits. This component offers a collector-emitter breakdown voltage of 60V and can handle a maximum collector current of 1A. It has a maximum power dissipation of 1W and a transition frequency of 200MHz.
The transistor operates within a temperature range of -55°C to 150°C. It is housed in a surface-mount TO-243AA (SOT-89-3) package, making it convenient for automated assembly processes. The DCX52-13 is specified with a minimum DC current gain (hFE) of 63 at 150mA and 2V, and a Vce saturation of 500mV at 50mA/500mA. The collector cutoff current (ICBO) is a maximum of 100nA.
This component is ideal for applications requiring a reliable PNP switching or amplification element. Its surface-mount package facilitates integration into compact designs. The specified electrical characteristics make it suitable for a range of low-to-medium power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.39 | $0.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
TO-243AA (SOT-89-3).
-55°C to 150°C.
1A.
200MHz.
63 at 150mA, 2V.
Surface mount.