| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The Diodes Incorporated ZXTP19100CZTA is a PNP bipolar junction transistor (BJT) suitable for discrete semiconductor applications. It features a high collector-emitter breakdown voltage of 100V and can handle a maximum collector current of 2A.
This transistor operates with a transition frequency of 142MHz and has a maximum power dissipation of 2.4W. The Vce saturation is specified at 295mV at 200mA collector current and 2A collector current, with a minimum DC current gain (hFE) of 200 at 100mA collector current and 2V Vce.
Designed for surface mounting, the ZXTP19100CZTA comes in a TO-243AA package, also known as SOT-89-3. It operates within a temperature range of -55°C to 150°C (TJ). The component is RoHS3 compliant and REACH unaffected.
This part is ideal for general-purpose amplification and switching applications where its voltage and current ratings are suitable. Its surface-mount package facilitates integration into compact circuit designs.
The operating junction temperature range is -55°C to 150°C.
The device is available in a SOT-89-3 surface mount package (TO-243AA).
The maximum collector current is 2A.
The collector-emitter breakdown voltage is 100V.
The minimum DC current gain (hFE) is 200 at 100mA collector current and 2V collector-emitter voltage.
The transition frequency is 142MHz.
The maximum power dissipation is 2.4W.