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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
JANTXV2N2222AUA
JANTXV2N2222AUA
Microchip Technology
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 650 mW - - 4-SMD - NPN 1V @ 50mA, 500mA 50 V
2N3421U4
2N3421U4
Microchip Technology
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 - - - - - - - - 3 A 40 @ 1A, 2V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - NPN 500mV @ 200mA, 2A 80 V
JANTXV2N3766
JANTXV2N3766
Microchip Technology
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 - - - - - - - - 4 A 40 @ 500mA, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 25 W - - TO-66 (TO-213AA) - NPN 2.5V @ 100mA, 1A 60 V
JANTXV2N2222AUA/TR
JANTXV2N2222AUA/TR
Microchip Technology
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 650 mW - - 4-SMD - NPN 1V @ 50mA, 500mA 50 V
JANTX2N3868S
JANTX2N3868S
Microchip Technology
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 - - - - - - - - 3 mA 30 @ 1.5A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 1.5V @ 250mA, 2.5A 60 V
JANTXV2N3867S
JANTXV2N3867S
Microchip Technology
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 - - - - - - - - 3 mA 40 @ 1.5A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 1.5V @ 250mA, 2.5A 40 V
JANTXV2N3868S
JANTXV2N3868S
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 - - - - - - - - 3 mA 30 @ 1.5A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 1.5V @ 250mA, 2.5A 60 V
JAN2N3867P
JAN2N3867P
Microchip Technology
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 - - - - - - - - 3 A 50 @ 500mA, 1V - - - - - - Through Hole -55°C ~ 200°C 1 W - - TO-5AA - PNP 1.5V @ 250mA, 2.5A 40 V
2C5038
2C5038
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2N335AT2
2N335AT2
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2N5339L
2N5339L
Microchip Technology
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 - - - - - - - - 5 A 60 @ 2A, 2V - - - - - - Through Hole -55°C ~ 200°C 1 W - - TO-39 (TO-205AD) - NPN 1.2V @ 500mA, 5A 100 V
2N3421P
2N3421P
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 - - - - - - - - 3 A 40 @ 1A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5AA - NPN 500mV @ 200mA, 2A 80 V
2C5886
2C5886
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2C3902-MSCL
2C3902-MSCL
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2C4399
2C4399
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2C5882
2C5882
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2C5884
2C5884
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2C5880
2C5880
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JANSD2N3700
JANSD2N3700
Microchip Technology
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 - - - - - - - - 1 A 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 (TO-206AA) - NPN 500mV @ 50mA, 500mA 80 V
2N5743
2N5743
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 - - - - - - - - 20 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 43 W - - TO-66 (TO-213AA) - PNP 1.5V @ 1mA, 10mA 60 V
2N5739
2N5739
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 - - - - - - - - 10 A - - - - - - - Through Hole - 35 W - - TO-66 (TO-213AA) - PNP - 60 V
2N335LT2
2N335LT2
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2N5740
2N5740
Microchip Technology
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 - - - - - - - - 10 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 35 W - - TO-66 (TO-213AA) - PNP 500mV @ 500µA, 5mA 100 V
JANTXV2N3767
JANTXV2N3767
Microchip Technology
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 - - - - - - - - 4 A 40 @ 500mA, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 25 W - - TO-66 (TO-213AA) - NPN 2.5V @ 100mA, 1A 80 V
2N5660
2N5660
Microchip Technology
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 - - - - - - - - 2 A 40 @ 500mA, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 2 W - - TO-66 (TO-213AA) - NPN 800mV @ 400mA, 2A 200 V
JANSF2N3700
JANSF2N3700
Microchip Technology
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 - - - - - - - - 1 A 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 (TO-206AA) - NPN 500mV @ 50mA, 500mA 80 V
2N6298
2N6298
Microchip Technology
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 - - - - - - - - 8 A 750 @ 4A, 3V - - - - - - Through Hole -65°C ~ 175°C (TJ) 64 W - - TO-66 (TO-213AA) - PNP - Darlington 2V @ 80mA, 8A 60 V
JANS2N3501UB/TR
JANS2N3501UB/TR
Microchip Technology
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 - - - - - - - - 300 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - NPN 400mV @ 15mA, 150mA 150 V
JAN2N5664P
JAN2N5664P
Microchip Technology
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 - - - - - - - - 5 A 40 @ 1A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 2.5 W - - TO-66 (TO-213AA) - NPN 400mV @ 300mA, 3A 200 V
2N335T2
2N335T2
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MVR2N2907AUA/TR
MVR2N2907AUA/TR
Microchip Technology
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UA - PNP 1.6V @ 50mA, 500mA 60 V
JANHCC2N5151
JANHCC2N5151
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 - - - - - - - - 2 A 30 @ 2.5A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 1.5V @ 500mA, 5A 80 V
2C5001
2C5001
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2C5003-MSCL
2C5003-MSCL
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2C5003
2C5003
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2C5000
2C5000
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JAN2N5745
JAN2N5745
Microchip Technology
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 - - - - - - - - 100 µA 15 @ 10A, 2V - - - - - - Through Hole -55°C ~ 200°C (TJ) 5 W - - TO-3 - PNP 1V @ 1A, 10A 80 V
2N4233
2N4233
Microchip Technology
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JANTX2N2919
JANTX2N2919
Microchip Technology
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 - - - - - - - - 30 mA - - - - - - - Through Hole 200°C (TJ) - - - TO-78-6 - NPN - 60 V
2N3585P
2N3585P
Microchip Technology
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 - - - - - - - - 2 A 40 @ 100mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 2.5 W - - TO-66 (TO-213AA) - NPN 750mV @ 125mA, 1A 300 V
2N2369AUA/TR
2N2369AUA/TR
Microchip Technology
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 - - - - - - - - 400nA 20 @ 100mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 360 mW - - SMD - NPN 450mV @ 10mA, 100mA 15 V
2N6301P
2N6301P
Microchip Technology
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 - - - - - - - - 8 A 750 @ 4A, 3V - - - - - - Through Hole -55°C ~ 200°C (TJ) 75 W - - TO-66 (TO-213AA) - NPN - Darlington 3V @ 80mA, 8A 80 V
2N6299P
2N6299P
Microchip Technology
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 - - - - - - - - 8 A 750 @ 4A, 3V - - - - - - Through Hole -65°C ~ 175°C (TJ) 64 W - - TO-66 (TO-213AA) - PNP - Darlington 2V @ 80mA, 8A 80 V
JANTX2N2369AUA
JANTX2N2369AUA
Microchip Technology
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 - - - - - - - - 400nA 40 @ 10mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 360 mW - - UA - NPN 450mV @ 10mA, 100mA 15 V
JANTX2N2369AUA/TR
JANTX2N2369AUA/TR
Microchip Technology
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 - - - - - - - - 400 nA 40 @ 10mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 360 mW - - UA - NPN 450mV @ 10mA, 100mA 15 V
2N6261
2N6261
Microchip Technology
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2N3584
2N3584
Microchip Technology
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 - - - - - - - - 2 A 40 @ 100mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 2.5 W - - TO-66 (TO-213AA) - NPN 750mV @ 125mA, 1A 250 V
2N656
2N656
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2N657
2N657
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2N656S
2N656S
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 - - - - - - - - 12 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) - - - TO-5AA - NPN - 60 V
Showing 18851-18900 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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