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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2N3507AU4
2N3507AU4
Microchip Technology
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 - - - - - - - - 3 A 30 @ 1.5A, 2V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - NPN 1.5V @ 250mA, 2.5A 50 V
2N5840
2N5840
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2N1701
2N1701
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2N5838
2N5838
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2N5839
2N5839
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2N2369AU
2N2369AU
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 - - - - - - - - 400nA 20 @ 100mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - SMD - NPN 450mV @ 10mA, 100mA 15 V
2N3715
2N3715
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 - - - - - - - - 1 mA 50 @ 1A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 5 W - - TO-3 - NPN 2.5V @ 2A, 10A 60 V
2N6338
2N6338
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JAN2N1711S
JAN2N1711S
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 - - - - - - - - 500 mA 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 800 mW - - TO-39 (TO-205AD) - NPN 1.5V @ 15mA, 150mA 30 V
JANS2N2484UB
JANS2N2484UB
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 - - - - - - - - 50 mA 250 @ 1mA, 5V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 360 mW - - UB - NPN 300mV @ 100µA, 1mA 60 V
JANS2N2484UB/TR
JANS2N2484UB/TR
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 - - - - - - - - 50 mA 250 @ 1mA, 5V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 360 mW - - UB - NPN 300mV @ 100µA, 1mA 60 V
2N5672
2N5672
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 - - - - - - - - 30 A 20 @ 20A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 6 W - - TO-3 - NPN 5V @ 6A, 30A 120 V
2N5671
2N5671
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 - - - - - - - - 30 A 20 @ 20A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 6 W - - TO-3 - NPN 5V @ 6A, 30A 90 V
JANSR2N2222AUB/E10
JANSR2N2222AUB/E10
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - NPN 1V @ 50mA, 500mA 50 V
JANSM2N2907AUB
JANSM2N2907AUB
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - PNP 1.6V @ 50mA, 500mA 60 V
2C3791
2C3791
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2C3790
2C3790
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2N5416UAC
2N5416UAC
Microchip Technology
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 - - - - - - - - 1 A 30 @ 50mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 750 mW - - UA - PNP 2V @ 5mA, 50mA 300 V
2N6078
2N6078
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 - - - - - - - - 7 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 45 W - - TO-66 (TO-213AA) - PNP 500mV @ 200µA, 1.2mA 250 V
2N5552
2N5552
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 - - - - - - - - 10 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 15 W - - TO-5AA - PNP 500mV @ 500µA, 5mA 80 V
JANSR2N2222AUB
JANSR2N2222AUB
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - NPN 1V @ 50mA, 500mA 50 V
JANSR2N2907AUB
JANSR2N2907AUB
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 - - - - - - - - 600 mA 100 @ 1mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - PNP 1.6V @ 50mA, 500mA 60 V
JANSR2N2222AUB/TR
JANSR2N2222AUB/TR
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - NPN 1V @ 50mA, 500mA 50 V
JANSR2N2907AUB/TR
JANSR2N2907AUB/TR
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 - - - - - - - - 600 mA 100 @ 1mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - PNP 1.6V @ 50mA, 500mA 60 V
JAN2N6383
JAN2N6383
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 - - - - - - - - 10 A 1000 @ 5A, 3V - - - - - - Through Hole -55°C ~ 175°C (TJ) 6 W - - TO-204AA (TO-3) - NPN - Darlington 3V @ 100mA, 10A 40 V
JAN2N6384
JAN2N6384
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 - - - - - - - - 10 A 1000 @ 5A, 3V - - - - - - Through Hole -55°C ~ 175°C (TJ) 6 W - - TO-204AA (TO-3) - NPN - Darlington 3V @ 100mA, 10A 60 V
JAN2N6286
JAN2N6286
Microchip Technology
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 - - - - - - - - 1 mA 1500 @ 1A, 3V - - - - - - Through Hole -65°C ~ 200°C (TJ) 175 W - - TO-204AA (TO-3) - PNP - Darlington 3V @ 200mA, 20A 80 V
JANTX2N6385
JANTX2N6385
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 - - - - - - - - 10 A 1000 @ 5A, 3V - - - - - - Through Hole -55°C ~ 175°C (TJ) 6 W - - TO-204AA (TO-3) - NPN - Darlington 3V @ 100mA, 10A 80 V
JANS2N2219A
JANS2N2219A
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Through Hole -55°C ~ 200°C (TJ) 800 W - - TO-39 (TO-205AD) - NPN 1V @ 50mA, 500mA 50 V
2N5886
2N5886
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JANTX2N6283
JANTX2N6283
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 - - - - - - - - 1 mA 1500 @ 1A, 3V - - - - - - Through Hole -65°C ~ 200°C (TJ) 175 W - - TO-204AA (TO-3) - NPN - Darlington 3V @ 200mA, 20A 80 V
JAN2N6287
JAN2N6287
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 - - - - - - - - 20 A 1250 @ 10A, 3V - - - - - - Through Hole -65°C ~ 175°C (TJ) 175 W - - TO-204AA (TO-3) - PNP - Darlington 3V @ 200mA, 20A 100 V
JANSF2N2484
JANSF2N2484
Microchip Technology
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 - - - - - - - - 50 mA 225 @ 10mA, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) - - - TO-18 (TO-206AA) - NPN 300mV @ 100µA, 1mA 60 V
JANTX2N6051
JANTX2N6051
Microchip Technology
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 - - - - - - - - 12 A 1000 @ 6A, 3V - - - - - - Through Hole -55°C ~ 175°C (TJ) 150 W - - TO-204AA (TO-3) - PNP - Darlington 3V @ 120mA, 12A 80 V
JANS2N3421
JANS2N3421
Microchip Technology
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 - - - - - - - - 3 A 40 @ 1A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5AA - NPN 500mV @ 200mA, 2A 80 V
JANS2N3421S
JANS2N3421S
Microchip Technology
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 - - - - - - - - 3 A 40 @ 1A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN 500mV @ 200mA, 2A 80 V
2N6247
2N6247
Microchip Technology
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 - - - - - - - - 15 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 125 W - - TO-204AD (TO-3) - PNP - 80 V
2N5467
2N5467
Microchip Technology
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 - - - - - - - - 3 A - - - - - - - Through Hole - 140 W - - TO-204AD (TO-3) - PNP - 400 V
2N5466
2N5466
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 - - - - - - - - 3 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 140 W - - TO-204AD (TO-3) - PNP - 400 V
2N5302
2N5302
Microchip Technology
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 - - - - - - - - 30 A 15 @ 15A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 5 W - - TO-204AD (TO-3) - NPN 3V @ 6A, 30A 60 V
2N5303
2N5303
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 - - - - - - - - 20 A 15 @ 10A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 5 W - - TO-204AD (TO-3) - NPN 2V @ 4A, 20A 80 V
JANTX2N6308
JANTX2N6308
Microchip Technology
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 - - - - - - - - 8 A 12 @ 3A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 125 W - - TO-204AA (TO-3) - NPN 5V @ 2.67A, 8A 350 V
JANS2N2221
JANS2N2221
Microchip Technology
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 - - - - - - - - - 100 @ 150mA, 10V - - - 250MHz - - Through Hole - - - - TO-18 (TO-206AA) - NPN - 30 V
JANTXV2N6306
JANTXV2N6306
Microchip Technology
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 - - - - - - - - 8 A 15 @ 3A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 125 W - - TO-204AA (TO-3) - NPN 5V @ 2A, 8A 250 V
JANTXV2N6308
JANTXV2N6308
Microchip Technology
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 - - - - - - - - 8 A 12 @ 3A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 125 W - - TO-204AA (TO-3) - NPN 5V @ 2.67A, 8A 350 V
JANTV2N6546
JANTV2N6546
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 - - - - - - - - 15 A 12 @ 5A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 175 W - - TO-204AD (TO-3) - NPN 5V @ 3A, 15A 300 V
2N6436
2N6436
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2N5804
2N5804
Microchip Technology
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 - - - - - - - - 5 A - - - - - - - Through Hole - 62 W - - TO-3 - PNP - 225 V
2N5805
2N5805
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 - - - - - - - - 5 A - - - - - - - Through Hole - 62 W - - TO-3 - PNP - 300 V
2N1702
2N1702
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Showing 18951-19000 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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