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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
SJ6522AG
SJ6522AG
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BC850BW,135
BC850BW,135
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 200 mW - - SOT-323 - NPN 600mV @ 5mA, 100mA 45 V
BC857C-7-F
BC857C-7-F
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Diodes Incorporated
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 200MHz - - Surface Mount -65°C ~ 150°C (TJ) 300 mW - - SOT-23-3 - PNP 650mV @ 5mA, 100mA 45 V
BC848A-7-F
BC848A-7-F
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Diodes Incorporated
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Surface Mount -65°C ~ 150°C (TJ) 300 mW - - SOT-23-3 - NPN 600mV @ 5mA, 100mA 30 V
BC850CW,135
BC850CW,135
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 200 mW - - SOT-323 - NPN 600mV @ 5mA, 100mA 45 V
BC817-40WT1G
BC817-40WT1G
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On Semiconductor
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 - - - - - - - - 500 mA 250 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 460 mW - - SC-70-3 (SOT323) - NPN 700mV @ 50mA, 500mA 45 V
BC816-16WX
BC816-16WX
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 200 mW - - SOT-323 - NPN 400mV @ 50mA, 500mA 80 V
BC847AWT1G
BC847AWT1G
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On Semiconductor
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SC-70-3 (SOT323) - NPN 600mV @ 5mA, 100mA 45 V
MMBT3906 RFG
MMBT3906 RFG
Taiwan Semiconductor
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23 - PNP 400mV @ 5mA, 50mA 40 V
BC816-25HVL
BC816-25HVL
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 100MHz - - Surface Mount 175°C (TJ) 300 mW - - TO-236AB - NPN 400mV @ 50mA, 500mA 80 V
MMBT3904 RFG
MMBT3904 RFG
Taiwan Semiconductor
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23 - NPN 300mV @ 5mA, 50mA 40 V
SST2907AHZGT116
SST2907AHZGT116
ROHM Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - SST3 - PNP 1.6V @ 50mA, 500mA 60 V
SST2222AHZGT116
SST2222AHZGT116
ROHM Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Surface Mount 150°C (TJ) 200 mW - - SST3 - NPN 1V @ 50mA, 500mA 40 V
BC849C,235
BC849C,235
Nexperia USA Inc.
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 600mV @ 5mA, 100mA 30 V
BC850B,235
BC850B,235
Nexperia USA Inc.
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 600mV @ 5mA, 100mA 45 V
BDV64
BDV64
NTE Electronics
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 - - - - - - - - 12 A 1000 @ 5A, 4V - - - 60MHz - - Through Hole - 125 W - - TO-218 - PNP - 60 V
2PD601BRL,215
2PD601BRL,215
Download Datasheet for 2PD601BRL,215
Nexperia USA Inc.
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 - - - - - - - - 200 mA 210 @ 2mA, 10V - - - 250MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 250mV @ 10mA, 100mA 50 V
MMBTA14-7-F
MMBTA14-7-F
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Diodes Incorporated
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 - - - - - - - - 300 mA 20000 @ 100mA, 5V - - - 125MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23-3 - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
BC857BT-7-F
BC857BT-7-F
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Diodes Incorporated
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SOT-523 - PNP 650mV @ 5mA, 100mA 45 V
PMBTA56,235
PMBTA56,235
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 50MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - PNP 250mV @ 10mA, 100mA 80 V
2SC4117-GR,LF
2SC4117-GR,LF
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Toshiba
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 - - - - - - - - 100 mA 200 @ 2mA, 6V - - - 100MHz - - Surface Mount 125°C (TJ) 100 mW - - SC-70 - NPN 300mV @ 1mA, 10mA 120 V
PBSS2515MB,315
PBSS2515MB,315
Download Datasheet for PBSS2515MB,315
Nexperia USA Inc.
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 - - - - - - - - 500 mA 200 @ 10mA, 2V - - - 420MHz - - Surface Mount 150°C (TJ) 250 mW - - DFN1006B-3 - NPN 25mV @ 500µA, 10mA 15 V
MMBT2222A RFG
MMBT2222A RFG
Taiwan Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23 - NPN 1V @ 50mA, 500mA 40 V
PMBT2222A/DG,215
PMBT2222A/DG,215
NXP Semiconductors
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MMST5551-TP
MMST5551-TP
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Micro Commercial
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 - - - - - - - - 200 mA 80 @ 10mA, 5V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-323 - NPN 200mV @ 5mA, 50mA 160 V
MMS9013HE3-H-TP
MMS9013HE3-H-TP
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Micro Commercial
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 - - - - - - - - 500 mA 200 @ 500mA, 1V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23 - - 600mV @ 50mA, 500mA 25 V
PMBTA42/DG215
PMBTA42/DG215
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NXP Semiconductors
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BC816-25HR
BC816-25HR
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 100MHz - - Surface Mount 175°C (TJ) 300 mW - - TO-236AB - NPN 400mV @ 50mA, 500mA 80 V
BCX17,235
BCX17,235
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 80MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - PNP 620mV @ 50mA, 500mA 45 V
BC807-40QAZ
BC807-40QAZ
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 40 @ 500mA, 1V - - - 80MHz - - Surface Mount 150°C (TJ) 900 mW - - DFN1010D-3 - PNP 700mV @ 50mA, 500mA 45 V
SMMBTA56LT3G
SMMBTA56LT3G
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On Semiconductor
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 50MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23-3 (TO-236) - PNP 250mV @ 10mA, 100mA 80 V
PMBT5550,235
PMBT5550,235
Download Datasheet for PMBT5550,235
Nexperia USA Inc.
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 - - - - - - - - 300 mA 60 @ 10mA, 5V - - - 300MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 250mV @ 5mA, 50mA 140 V
BC847AE6327HTSA1
BC847AE6327HTSA1
Download Datasheet for BC847AE6327HTSA1
Infineon Technologies
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 100MHz - - Surface Mount -65°C ~ 150°C (TJ) 200 mW - - PG-SOT23 - NPN 500mV @ 5mA, 100mA 45 V
MMBTA06-HF
MMBTA06-HF
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Comchip Technology
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 - - - - - - - - 500 mA 100 @ 10mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 300 mW - - SOT-23-3 - NPN 250mV @ 10mA, 100mA 80 V
BCP56-10H,115
BCP56-10H,115
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NXP Semiconductors
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SST2907AT116
SST2907AT116
ROHM Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 350 mW - - SST3 - PNP 1.6V @ 50mA, 500mA 60 V
KSC5021RTU
KSC5021RTU
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On Semiconductor
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 - - - - - - - - 5 A 15 @ 600mA, 5V - - - 18MHz - - Through Hole 150°C (TJ) 50 W - - TO-220-3 - NPN 1V @ 600mA, 3A 500 V
UMT3904T106
UMT3904T106
ROHM Semiconductor
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - NPN 300mV @ 5mA, 50mA 40 V
PDTA113ZMB315
PDTA113ZMB315
Nexperia USA Inc.
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2SA1162-Y,LXHF
2SA1162-Y,LXHF
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Toshiba
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 - - - - - - - - 150 mA 120 @ 2mA, 6V - - - 80MHz - - Surface Mount 125°C (TJ) 200 mW - - S-Mini - PNP 300mV @ 10mA, 100mA 50 V
BCX70KE6327HTSA1
BCX70KE6327HTSA1
Download Datasheet for BCX70KE6327HTSA1
Infineon Technologies
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 - - - - - - - - 100 mA 380 @ 2mA, 5V - - - 250MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - NPN 550mV @ 1.25mA, 50mA 45 V
MMBT2907ALT1HTSA1
MMBT2907ALT1HTSA1
Download Datasheet for MMBT2907ALT1HTSA1
Infineon Technologies
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - PNP 1.6V @ 50mA, 500mA 60 V
MMBT2222ALT1HTSA1
MMBT2222ALT1HTSA1
Download Datasheet for MMBT2222ALT1HTSA1
Infineon Technologies
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - NPN 1V @ 50mA, 500mA 40 V
BC557ATA
BC557ATA
Download Datasheet for BC557ATA
On Semiconductor
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 45 V
PZTA92
PZTA92
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On Semiconductor
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 - - - - - - - - 500 mA 25 @ 30mA, 10V - - - 50MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-223-4 - PNP 500mV @ 2mA, 20mA 300 V
SPS9600RLRE
SPS9600RLRE
On Semiconductor
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SPS9567RLRM
SPS9567RLRM
On Semiconductor
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2N5088TF
2N5088TF
On Semiconductor
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2N5088BU
2N5088BU
On Semiconductor
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 - - - - - - - - 100 mA 300 @ 100µA, 5V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 500mV @ 1mA, 10mA 30 V
KST55MTF
KST55MTF
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On Semiconductor
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 - - - - - - - - 500 mA 50 @ 100mA, 1V - - - 50MHz - - Surface Mount - 350 mW - - SOT-23-3 - PNP 250mV @ 10mA, 100mA 60 V
Showing 19001-19050 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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