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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
KSA1370FBU
KSA1370FBU
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 100 mA 100 @ 10mA, 10V 150MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 600mV @ 2mA, 20mA 200 V
TIS93
TIS93
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 800 mA 100 @ 50mA, 2V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 250mV @ 5mA, 50mA 40 V
KSC2310RTA
KSC2310RTA
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 50 mA 40 @ 10mA, 5V 100MHz Through Hole 150°C (TJ) 800 mW TO-92-3 NPN 500mV @ 1mA, 10mA 150 V
KSC2331OTA
KSC2331OTA
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 700 mA 70 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 1 W TO-92-3 NPN 700mV @ 50mA, 500mA 60 V
KSC2330RBU
KSC2330RBU
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 100 mA 40 @ 20mA, 10V 50MHz Through Hole 150°C (TJ) 1 W TO-92-3 NPN 500mV @ 1mA, 10mA 300 V
KSC2330ASHBU
KSC2330ASHBU
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 100 mA 40 @ 20mA, 10V 50MHz Through Hole 150°C (TJ) 1 W TO-92-3 NPN 500mV @ 1mA, 10mA 400 V
FJN5471PWD
FJN5471PWD
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 5 A 700 @ 500mA, 2V 150MHz Through Hole 150°C (TJ) 750 mW TO-92-3 NPN 500mV @ 100mA, 3A 20 V
KSA1281OTA
KSA1281OTA
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 2 A 70 @ 500mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 500mV @ 50mA, 1A 50 V
KSA1281YBU
KSA1281YBU
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 2 A 120 @ 500mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 500mV @ 50mA, 1A 50 V
KSA1281OBU
KSA1281OBU
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 2 A 70 @ 500mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 500mV @ 50mA, 1A 50 V
MPSA92RA
MPSA92RA
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 500 mA 25 @ 30mA, 10V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 500mV @ 2mA, 20mA 300 V
FJZ945LTF
FJZ945LTF
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 150 mA 350 @ 1mA, 6V 300MHz Surface Mount 150°C (TJ) 100 mW SOT-623F NPN 300mV @ 10mA, 100mA 50 V
FJZ733GTF
FJZ733GTF
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 150 mA 200 @ 1mA, 6V 180MHz Surface Mount 150°C (TJ) 100 mW SOT-623F PNP 300mV @ 10mA, 100mA 50 V
FJZ733YTF
FJZ733YTF
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 150 mA 120 @ 1mA, 6V 180MHz Surface Mount 150°C (TJ) 100 mW SOT-623F PNP 300mV @ 10mA, 100mA 50 V
KSA928AOBU
KSA928AOBU
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 2 A 100 @ 500mA, 2V 120MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 2V @ 30mA, 1.5A 30 V
FJZ733RTF
FJZ733RTF
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 150 mA 40 @ 1mA, 6V 180MHz Surface Mount 150°C (TJ) 100 mW SOT-623F PNP 300mV @ 10mA, 100mA 50 V
KSC2500CBU
KSC2500CBU
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 2 A 300 @ 500mA, 1V 150MHz Through Hole 150°C (TJ) 900 mW TO-92-3 NPN 500mV @ 50mA, 2A 10 V
KSC2316OBU
KSC2316OBU
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 800 mA 80 @ 100mA, 5V 120MHz Through Hole 150°C (TJ) 900 mW TO-92-3 NPN 1V @ 50mA, 500mA 120 V
KSA1013RBU
KSA1013RBU
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 1 A 60 @ 200mA, 5V 50MHz Through Hole 150°C (TJ) 900 mW TO-92-3 PNP 1.5V @ 50mA, 500mA 160 V
KSC2383OBU
KSC2383OBU
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 1 A 100 @ 200mA, 5V 100MHz Through Hole 150°C (TJ) 900 mW TO-92-3 NPN 1.5V @ 50mA, 500mA 160 V
KSC2383YBU
KSC2383YBU
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 1 A 160 @ 200mA, 5V 100MHz Through Hole 150°C (TJ) 900 mW TO-92-3 NPN 1.5V @ 50mA, 500mA 160 V
KSA1013RTA
KSA1013RTA
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 1 A 60 @ 200mA, 5V 50MHz Through Hole 150°C (TJ) 900 mW TO-92-3 PNP 1.5V @ 50mA, 500mA 160 V
FMBS5401
FMBS5401
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 600 mA 60 @ 10mA, 5V 300MHz Surface Mount -55°C ~ 150°C (TJ) 700 mW SuperSOT™-6 PNP 500mV @ 5mA, 50mA 150 V
FMBS5551
FMBS5551
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 600 mA 80 @ 10mA, 5V 300MHz Surface Mount -55°C ~ 150°C (TJ) 700 mW SuperSOT™-6 NPN 200mV @ 5mA, 50mA 160 V
FJYF2906PWD
FJYF2906PWD
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 150 mA 100 @ 10mA, 1V 250MHz Surface Mount -55°C ~ 150°C (TJ) 150 mW SOT-563F PNP 500mV @ 5mA, 50mA 40 V
FSB6726
FSB6726
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 1.5 A 50 @ 1A, 1V - Surface Mount -55°C ~ 150°C (TJ) 500 mW SOT-23-3 PNP 500mV @ 100mA, 1A 30 V
FMBSA06
FMBSA06
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 500 mA 100 @ 100mA, 1V 100MHz Surface Mount -55°C ~ 150°C (TJ) 700 mW SuperSOT™-6 NPN 250mV @ 10mA, 100mA 80 V
KSC2982ATF
KSC2982ATF
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 2 A 140 @ 500mA, 1V 150MHz Surface Mount 150°C (TJ) 500 mW SOT-89-3 NPN 500mV @ 50mA, 2A 10 V
KSC2982CTF
KSC2982CTF
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 2 A 300 @ 500mA, 1V 150MHz Surface Mount 150°C (TJ) 500 mW SOT-89-3 NPN 500mV @ 50mA, 2A 10 V
KSA1203OTF
KSA1203OTF
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 1.5 A 100 @ 500mA, 2V 120MHz Surface Mount 150°C (TJ) 1 W SOT-89-3 PNP 2V @ 30mA, 1.5A 30 V
FJC1308QTF
FJC1308QTF
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 3 A 120 @ 500mA, 2V - Surface Mount 150°C (TJ) 500 mW SOT-89-3 PNP 450mV @ 150mA, 1.5A 30 V
FJC1308RTF
FJC1308RTF
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 3 A 180 @ 500mA, 2V - Surface Mount 150°C (TJ) 500 mW SOT-89-3 PNP 450mV @ 150mA, 1.5A 30 V
FJYF2906TF
FJYF2906TF
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 150 mA 100 @ 10mA, 1V 250MHz Surface Mount -55°C ~ 150°C (TJ) 150 mW SOT-563F PNP 500mV @ 5mA, 50mA 40 V
TN6725A
TN6725A
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 1.2 A 4000 @ 1A, 5V - Through Hole -55°C ~ 150°C (TJ) 1 W TO-226-3 NPN - Darlington 1.5V @ 2mA, 1A 50 V
KSC2258AS
KSC2258AS
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 100 mA 40 @ 40mA, 20V 100MHz Through Hole 150°C (TJ) 4 W TO-126-3 NPN 1.2V @ 5mA, 50mA 300 V
KSD1621STF
KSD1621STF
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 2 A 140 @ 100mA, 2V 150MHz Surface Mount 150°C (TJ) 500 mW SOT-89-3 NPN 400mV @ 75mA, 1.5A 25 V
KSC3503DSTSTU
KSC3503DSTSTU
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 100 mA 60 @ 10mA, 10V 150MHz Through Hole -55°C ~ 150°C (TJ) 7 W TO-126-3 NPN 600mV @ 2mA, 20mA 300 V
MMBTA92HLT1G
MMBTA92HLT1G
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PZTA27
PZTA27
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 800 mA 10000 @ 100mA, 5V 125MHz Surface Mount -55°C ~ 150°C (TJ) 1 W SOT-223-4 NPN - Darlington 1.5V @ 100µA, 100mA 60 V
FPN430
FPN430
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 2 A 100 @ 100mA, 2V 100MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-226 PNP 500mV @ 100mA, 1A 30 V
PN3568
PN3568
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 1 A 40 @ 150mA, 1V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 250mV @ 15mA, 150mA 60 V
TN6728A
TN6728A
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 1.2 A 50 @ 250mA, 1V - Through Hole -55°C ~ 150°C (TJ) 1 W TO-226-3 PNP 500mV @ 10mA, 250mA 60 V
TN6716A
TN6716A
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 2 A 50 @ 250mA, 1V - Through Hole -55°C ~ 150°C (TJ) 1 W TO-226-3 NPN 500mV @ 10mA, 250mA 60 V
TN6715A
TN6715A
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 1.5 A 50 @ 1A, 1V - Through Hole -55°C ~ 150°C (TJ) 1 W TO-226-3 NPN 500mV @ 100mA, 1A 40 V
FPN330
FPN330
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 3 A 100 @ 100mA, 2V 100MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-226 NPN 500mV @ 100mA, 1A 30 V
KSE181STU
KSE181STU
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 3 A 50 @ 100mA, 1V 50MHz Through Hole - 1.5 W TO-126-3 NPN 1.7V @ 600mA, 3A 60 V
KSC2688OS
KSC2688OS
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 200 mA 60 @ 10mA, 10V 80MHz Through Hole 150°C (TJ) 1.25 W TO-126 NPN 1.5V @ 5mA, 50mA 300 V
KSC2688OSTU
KSC2688OSTU
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 200 mA 60 @ 10mA, 10V 80MHz Through Hole 150°C (TJ) 1.25 W TO-126 NPN 1.5V @ 5mA, 50mA 300 V
FPN330A
FPN330A
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 3 A 250 @ 100mA, 2V 100MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-226 NPN 450mV @ 100mA, 1A 30 V
KSA1381ESTSTU
KSA1381ESTSTU
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 100 mA 100 @ 10mA, 10V 150MHz Through Hole -55°C ~ 150°C (TJ) 7 W TO-126-3 PNP 600mV @ 2mA, 20mA 300 V
Showing 18751-18800 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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