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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
JAN2N3439U4
JAN2N3439U4
Microchip Technology
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 - - - - - - - - 2 µA 40 @ 20mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 800 mW - - U4 - NPN 500mV @ 4mA, 50mA 350 V
JAN2N3440U4
JAN2N3440U4
Microchip Technology
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 - - - - - - - - 2 µA 40 @ 20mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 800 mW - - U4 - NPN 500mV @ 4mA, 50mA 250 V
JAN2N3467
JAN2N3467
Microchip Technology
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 - - - - - - - - 1 A 40 @ 500mA, 1V - - - - - - Through Hole -55°C ~ 175°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 1.2V @ 100mA, 1A 40 V
JAN2N3468
JAN2N3468
Microchip Technology
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 - - - - - - - - 1 A 25 @ 500mA, 1V - - - - - - Through Hole -55°C ~ 175°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 1.2V @ 100mA, 1A 50 V
JAN2N3468L
JAN2N3468L
Microchip Technology
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 - - - - - - - - 1 A 25 @ 500mA, 1V - - - 150MHz - - Through Hole -55°C ~ 175°C (TJ) 1 W - - TO-5 - PNP 1.2V @ 100mA, 1A 50 V
JAN2N3498U4
JAN2N3498U4
Microchip Technology
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 - - - - - - - - 500 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - NPN 600mV @ 30mA, 300mA 100 V
JAN2N3499U4
JAN2N3499U4
Microchip Technology
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 - - - - - - - - 500 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - NPN 600mV @ 30mA, 300mA 100 V
JAN2N3500U4
JAN2N3500U4
Microchip Technology
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 - - - - - - - - 300 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - NPN 400mV @ 15mA, 150mA 150 V
JAN2N3501U4
JAN2N3501U4
Microchip Technology
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 - - - - - - - - 300 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - NPN 400mV @ 15mA, 150mA 150 V
JAN2N3506AU4
JAN2N3506AU4
Microchip Technology
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 - - - - - - - - 1 µA 50 @ 500mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - NPN 1.5V @ 250mA, 2.5A 40 V
JAN2N3506U4
JAN2N3506U4
Microchip Technology
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 - - - - - - - - 1 µA 50 @ 500mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - NPN 1.5V @ 250mA, 2.5A 40 V
JAN2N3507AU4
JAN2N3507AU4
Microchip Technology
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 - - - - - - - - 1 µA 35 @ 500mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - NPN 1.5V @ 250mA, 2.5A 50 V
JAN2N3507U4
JAN2N3507U4
Microchip Technology
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 - - - - - - - - 1 µA 35 @ 500mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - NPN 1.5V @ 250mA, 2.5A 50 V
JAN2N3724
JAN2N3724
Microchip Technology
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 - - - - - - - - - - - - - - - - Through Hole 200°C (TJ) - - - TO-39 (TO-205AD) - NPN - 30 V
JAN2N3724L
JAN2N3724L
Microchip Technology
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 - - - - - - - - 500 mA - - - - - - - Through Hole 200°C (TJ) - - - TO-5 - NPN - 30 V
JAN2N3724UB
JAN2N3724UB
Microchip Technology
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 - - - - - - - - 500 mA - - - - - - - Surface Mount 200°C (TJ) - - - UB - NPN - 30 V
JAN2N3725
JAN2N3725
Microchip Technology
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 - - - - - - - - 500 mA - - - - - - - Through Hole 200°C (TJ) - - - TO-39 (TO-205AD) - NPN - 50 V
JAN2N3725L
JAN2N3725L
Microchip Technology
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 - - - - - - - - 500 mA - - - - - - - Through Hole 200°C (TJ) - - - TO-5 - NPN - 50 V
JAN2N3725UB
JAN2N3725UB
Microchip Technology
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 - - - - - - - - 500 mA - - - - - - - Surface Mount 200°C (TJ) - - - UB - NPN - 50 V
JAN2N3740U4
JAN2N3740U4
Microchip Technology
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 - - - - - - - - 10 µA 30 @ 250mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 25 W - - U4 - PNP 600mV @ 1.25mA, 1A 60 V
JAN2N3741U4
JAN2N3741U4
Microchip Technology
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 - - - - - - - - 10 µA 30 @ 250mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 25 W - - U4 - PNP 600mV @ 1.25mA, 1A 80 V
JANTX2N1716
JANTX2N1716
Microchip Technology
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 - - - - - - - - 750 mA - - - - - - - Through Hole 175°C (TJ) - - - TO-5 - NPN - 60 V
JAN2N3743
JAN2N3743
Microchip Technology
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 - - - - - - - - 200 mA 50 @ 30mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 1.2V @ 3mA, 30mA 300 V
JAN2N3743U4
JAN2N3743U4
Microchip Technology
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 - - - - - - - - 200 mA 50 @ 30mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - PNP 1.2V @ 3mA, 30mA 300 V
JAN2N3762L
JAN2N3762L
Microchip Technology
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 - - - - - - - - 1.5 A 40 @ 500mA, 1V - - - - - - Through Hole -55°C ~ 200°C (TJ) 1 W - - TO-5 - PNP 900mV @ 100mA, 1A 40 V
JAN2N3762U4
JAN2N3762U4
Microchip Technology
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 - - - - - - - - 1.5 A - - - - - - - Surface Mount 200°C (TJ) - - - U4 - PNP - 40 V
JAN2N3763
JAN2N3763
Microchip Technology
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 - - - - - - - - 1.5 A 20 @ 1A, 1.5V - - - - - - Through Hole -55°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 900mV @ 100mA, 1A 60 V
JAN2N3763L
JAN2N3763L
Microchip Technology
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 - - - - - - - - 1.5 A 40 @ 500mA, 1V - - - - - - Through Hole -55°C ~ 200°C (TJ) 1 W - - TO-5 - PNP 900mV @ 100mA, 1A 60 V
JAN2N3763U4
JAN2N3763U4
Microchip Technology
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 - - - - - - - - 1.5 A 20 @ 1A, 1.5V - - - - - - Surface Mount -55°C ~ 200°C (TJ) 1 W - - U4 - PNP 900mV @ 100mA, 1A 60 V
JAN2N3764L
JAN2N3764L
Microchip Technology
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JAN2N3764U4
JAN2N3764U4
Microchip Technology
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 - - - - - - - - 1.5 A 30 @ 1A, 1.5V - - - - - - Surface Mount -55°C ~ 200°C (TJ) 500 mW - - U4 - PNP 900mV @ 100mA, 1A 40 V
JAN2N3765
JAN2N3765
Microchip Technology
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 - - - - - - - - 1.5 A 40 @ 500mA, 1V - - - - - - Through Hole -55°C ~ 200°C (TJ) 500 mW - - TO-46 (TO-206AB) - PNP 900mV @ 100mA, 1A 60 V
JAN2N3765L
JAN2N3765L
Microchip Technology
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JAN2N3765U4
JAN2N3765U4
Microchip Technology
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 - - - - - - - - 1.5 A 40 @ 500mA, 1V - - - - - - Surface Mount -55°C ~ 200°C (TJ) 500 mW - - U4 - PNP 900mV @ 100mA, 1A 60 V
JAN2N4930
JAN2N4930
Microchip Technology
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 - - - - - - - - 200 mA 50 @ 30mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 1.2V @ 3mA, 30mA 200 V
JAN2N4930U4
JAN2N4930U4
Microchip Technology
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 - - - - - - - - 200 mA 50 @ 30mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - PNP 1.2V @ 3mA, 30mA 200 V
JAN2N4931U4
JAN2N4931U4
Microchip Technology
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 - - - - - - - - 200 mA 50 @ 30mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - PNP 1.2V @ 3mA, 30mA 250 V
JAN2N497
JAN2N497
Microchip Technology
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 - - - - - - - - 200 mA - - - - - - - Through Hole 200°C (TJ) - - - TO-5 - NPN - 60 V
JAN2N497S
JAN2N497S
Microchip Technology
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JAN2N498
JAN2N498
Microchip Technology
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 - - - - - - - - 200 mA - - - - - - - Through Hole 200°C (TJ) - - - TO-5 - NPN - 100 V
JAN2N498S
JAN2N498S
Microchip Technology
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JAN2N5012
JAN2N5012
Microsemi Corporation
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 - - - - - - - - 200 mA 30 @ 25mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - NPN - 700 V
JAN2N5012S
JAN2N5012S
Microsemi Corporation
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 - - - - - - - - 200 mA 30 @ 25mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN - 700 V
JAN2N5013S
JAN2N5013S
Microsemi Corporation
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 - - - - - - - - 200 mA 30 @ 20mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN - 800 V
JAN2N5014
JAN2N5014
Microsemi Corporation
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 - - - - - - - - 200 mA 30 @ 20mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - NPN - 900 V
JAN2N5014S
JAN2N5014S
Microsemi Corporation
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 - - - - - - - - 200 mA 30 @ 20mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN - 900 V
JAN2N5015
JAN2N5015
Microsemi Corporation
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 - - - - - - - - 200 mA 30 @ 20mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - NPN - 1000 V
JAN2N5015S
JAN2N5015S
Microsemi Corporation
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 - - - - - - - - 200 mA 30 @ 20mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN - 1000 V
JAN2N5415U4
JAN2N5415U4
Microchip Technology
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 - - - - - - - - 50 µA 30 @ 50mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - PNP 2V @ 5mA, 50mA 200 V
JAN2N5416U4
JAN2N5416U4
Microchip Technology
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 - - - - - - - - 1 mA 30 @ 50mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - PNP 2V @ 5mA, 50mA 300 V
Showing 15851-15900 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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