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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
FZT689BTA-79
FZT689BTA-79
Diodes Incorporated
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KSD73YTSTU
KSD73YTSTU
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On Semiconductor
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 - - - - - - - - 5 A 120 @ 1A, 10V - - - 20MHz - - Through Hole 150°C (TJ) 30 W - - TO-220-3 - NPN 2V @ 500mA, 5A 60 V
KSE45H8
KSE45H8
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 - - - - - - - - 10 A 60 @ 2A, 1V - - - 40MHz - - Through Hole 150°C (TJ) 1.67 W - - TO-220-3 - PNP 1V @ 400mA, 8A 60 V
KSH350TF
KSH350TF
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 - - - - - - - - 500 mA 30 @ 50mA, 10V - - - - - - Surface Mount 150°C (TJ) 1.56 W - - D-Pak - PNP - 300 V
KSD362N
KSD362N
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 - - - - - - - - 5 A 20 @ 5A, 5V - - - 10MHz - - Through Hole 150°C (TJ) 40 W - - TO-220-3 - NPN 1V @ 500mA, 5A 70 V
BC859CLT1
BC859CLT1
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23-3 (TO-236) - PNP 650mV @ 5mA, 100mA 30 V
BC859CLT1G
BC859CLT1G
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23-3 (TO-236) - PNP 650mV @ 5mA, 100mA 30 V
BCP53-10T1
BCP53-10T1
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 - - - - - - - - 1.5 A 63 @ 150mA, 2V - - - 50MHz - - Surface Mount -65°C ~ 150°C (TJ) 1.5 W - - SOT-223 (TO-261) - PNP 500mV @ 50mA, 500mA 80 V
BCW30LT1
BCW30LT1
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BCW32LT1
BCW32LT1
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APT13005TF-E1
APT13005TF-E1
Diodes Incorporated
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BCW65ALT1
BCW65ALT1
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 - - - - - - - - 800 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23-3 (TO-236) - NPN 700mV @ 50mA, 500mA 32 V
BCW65CLT1
BCW65CLT1
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 - - - - - - - - 800 mA 250 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23-3 (TO-236) - NPN 700mV @ 50mA, 500mA 32 V
BCW66GLT1
BCW66GLT1
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 - - - - - - - - 800 mA 160 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23-3 (TO-236) - NPN 700mV @ 50mA, 500mA 45 V
BCW68GLT1
BCW68GLT1
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BCW70LT1
BCW70LT1
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 - - - - - - - - 100 mA 215 @ 2mA, 5V - - - - - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23-3 (TO-236) - PNP 300mV @ 500µA, 10mA 45 V
BCW72LT1
BCW72LT1
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23-3 (TO-236) - NPN 250mV @ 500µA, 10mA 45 V
BCX17LT3G
BCX17LT3G
On Semiconductor
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - - - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23-3 (TO-236) - PNP 620mV @ 50mA, 500mA 45 V
BCX18LT1G
BCX18LT1G
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - - - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23-3 (TO-236) - PNP 620mV @ 50mA, 500mA 25 V
BD137
BD137
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 - - - - - - - - 1.5 A 40 @ 150mA, 2V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1.25 W - - TO-126 - NPN 500mV @ 50mA, 500mA 60 V
BD437T
BD437T
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 - - - - - - - - 4 A 85 @ 500mA, 1V - - - 3MHz - - Through Hole -55°C ~ 150°C (TJ) 36 W - - TO-126 - NPN 800mV @ 300mA, 3A 45 V
BD159G
BD159G
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 - - - - - - - - 500 mA 30 @ 50mA, 10V - - - - - - Through Hole -65°C ~ 150°C (TJ) 20 W - - TO-126 - NPN - 350 V
BD179
BD179
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 - - - - - - - - 3 A 63 @ 150mA, 2V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 30 W - - TO-126 - NPN 800mV @ 100mA, 1A 80 V
BD180
BD180
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 - - - - - - - - 3 A 40 @ 150mA, 2V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 30 W - - TO-126 - PNP 800mV @ 100mA, 1A 80 V
BD234
BD234
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 - - - - - - - - 2 A 25 @ 1A, 2V - - - 3MHz - - Through Hole -55°C ~ 150°C (TJ) 25 W - - TO-126 - PNP 600mV @ 100mA, 1A 45 V
BD435G
BD435G
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 - - - - - - - - 4 A 85 @ 500mA, 1V - - - 3MHz - - Through Hole -55°C ~ 150°C (TJ) 36 W - - TO-126 - NPN 500mV @ 200mA, 2A 32 V
BD438G
BD438G
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 - - - - - - - - 4 A 85 @ 500mA, 1V - - - 3MHz - - Through Hole -55°C ~ 150°C (TJ) 36 W - - TO-126 - PNP 700mV @ 300mA, 3A 45 V
BD440
BD440
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 - - - - - - - - 4 A 40 @ 500mA, 1V - - - 3MHz - - Through Hole -55°C ~ 150°C (TJ) 36 W - - TO-126 - PNP 800mV @ 300mA, 3A 60 V
BD440G
BD440G
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 - - - - - - - - 4 A 40 @ 500mA, 1V - - - 3MHz - - Through Hole -55°C ~ 150°C (TJ) 36 W - - TO-126 - PNP 800mV @ 300mA, 3A 60 V
BD675
BD675
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 - - - - - - - - 4 A 750 @ 1.5A, 3V - - - - - - Through Hole -55°C ~ 150°C (TJ) 40 W - - TO-126 - NPN - Darlington 2.5V @ 30mA, 1.5A 45 V
BD675AG
BD675AG
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 - - - - - - - - 4 A 750 @ 2A, 3V - - - - - - Through Hole -55°C ~ 150°C (TJ) 40 W - - TO-126 - NPN - Darlington 2.8V @ 40mA, 2A 45 V
BD675G
BD675G
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 - - - - - - - - 4 A 750 @ 1.5A, 3V - - - - - - Through Hole -55°C ~ 150°C (TJ) 40 W - - TO-126 - NPN - Darlington 2.5V @ 30mA, 1.5A 45 V
BD676AG
BD676AG
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 - - - - - - - - 4 A 750 @ 2A, 3V - - - - - - Through Hole -55°C ~ 150°C (TJ) 40 W - - TO-126 - PNP - Darlington 2.8V @ 40mA, 2A 45 V
BD676G
BD676G
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 - - - - - - - - 4 A 750 @ 1.5A, 3V - - - - - - Through Hole -55°C ~ 150°C (TJ) 40 W - - TO-126 - PNP - Darlington 2.5V @ 30mA, 1.5A 45 V
BD677AG
BD677AG
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 - - - - - - - - 4 A 750 @ 2A, 3V - - - - - - Through Hole -55°C ~ 150°C (TJ) 40 W - - TO-126 - NPN - Darlington 2.8V @ 40mA, 2A 60 V
BD677G
BD677G
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 - - - - - - - - 4 A 750 @ 1.5A, 3V - - - - - - Through Hole -55°C ~ 150°C (TJ) 40 W - - TO-126 - NPN - Darlington 2.5V @ 30mA, 1.5A 60 V
BD678AG
BD678AG
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 - - - - - - - - 4 A 750 @ 2A, 3V - - - - - - Through Hole -55°C ~ 150°C (TJ) 40 W - - TO-126 - PNP - Darlington 2.8V @ 40mA, 2A 60 V
BD679AG
BD679AG
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 - - - - - - - - 4 A 750 @ 2A, 3V - - - - - - Through Hole -55°C ~ 150°C (TJ) 40 W - - TO-126 - NPN - Darlington 2.8V @ 40mA, 2A 80 V
BD680G
BD680G
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 - - - - - - - - 4 A 750 @ 1.5A, 3V - - - - - - Through Hole -55°C ~ 150°C (TJ) 40 W - - TO-126 - PNP - Darlington 2.5V @ 30mA, 1.5A 80 V
BD682TG
BD682TG
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 - - - - - - - - 4 A 750 @ 1.5A, 3V - - - - - - Through Hole -55°C ~ 150°C (TJ) 40 W - - TO-126 - PNP - Darlington 2.5V @ 30mA, 1.5A 100 V
BD787
BD787
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 - - - - - - - - 4 A 40 @ 200mA, 3V - - - 50MHz - - Through Hole -65°C ~ 150°C (TJ) 15 W - - TO-126 - NPN 2.5V @ 800mA, 4A 60 V
BD809G
BD809G
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 - - - - - - - - 10 A 15 @ 4A, 2V - - - 1.5MHz - - Through Hole -55°C ~ 150°C (TJ) 90 W - - TO-220 - NPN 1.1V @ 300mA, 3A 80 V
BD810
BD810
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 - - - - - - - - 10 A 15 @ 4A, 2V - - - 1.5MHz - - Through Hole -55°C ~ 150°C (TJ) 90 W - - TO-220 - PNP 1.1V @ 300mA, 3A 80 V
BD810G
BD810G
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 - - - - - - - - 10 A 15 @ 4A, 2V - - - 1.5MHz - - Through Hole -55°C ~ 150°C (TJ) 90 W - - TO-220 - PNP 1.1V @ 300mA, 3A 80 V
BDC01DRL1G
BDC01DRL1G
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 - - - - - - - - 500 mA 40 @ 100mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - NPN 700mV @ 100mA, 1A 100 V
FMMTA56TA-79
FMMTA56TA-79
Diodes Incorporated
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BDV65B
BDV65B
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 - - - - - - - - 10 A 1000 @ 5A, 4V - - - - - - Through Hole -65°C ~ 150°C (TJ) 125 W - - SOT-93 - NPN - Darlington 2V @ 20mA, 5A 100 V
BDW42
BDW42
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 - - - - - - - - 15 A 1000 @ 5A, 4V - - - 4MHz - - Through Hole -55°C ~ 150°C (TJ) 85 W - - TO-220 - NPN - Darlington 3V @ 50mA, 10A 100 V
BDW46
BDW46
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On Semiconductor
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 - - - - - - - - 15 A 1000 @ 5A, 4V - - - 4MHz - - Through Hole -55°C ~ 150°C (TJ) 85 W - - TO-220 - PNP - Darlington 3V @ 50mA, 10A 80 V
BDX53B
BDX53B
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 - - - - - - - - 8 A 750 @ 3A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 65 W - - TO-220 - NPN - Darlington 2V @ 12mA, 3A 80 V
Showing 15701-15750 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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