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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2SC6097-E
2SC6097-E
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 - - - - - - - - 3 A 300 @ 100mA, 2V - - - 390MHz - - Through Hole 150°C (TJ) 800 mW - - TP - NPN 135mV @ 100mA, 1A 60 V
DN0150BLP4-7B
DN0150BLP4-7B
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Diodes Incorporated
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 - - - - - - - - 100 mA 200 @ 2mA, 6V - - - 60MHz - - Surface Mount -55°C ~ 150°C (TJ) 450 mW - - X2-DFN1006-3 - NPN 250mV @ 10mA, 100mA 50 V
DN0150ALP4-7B
DN0150ALP4-7B
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Diodes Incorporated
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 - - - - - - - - 100 mA 120 @ 2mA, 6V - - - 60MHz - - Surface Mount -55°C ~ 150°C (TJ) 450 mW - - X2-DFN1006-3 - NPN 250mV @ 10mA, 100mA 50 V
TRD236DT4
TRD236DT4
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STMicroelectronics
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 - - - - - - - - 4 A 8 @ 2.5A, 5V - - - - - - Surface Mount 150°C (TJ) 35 W - - DPAK - NPN 1.3V @ 600mA, 2.5A 400 V
BC856AT,115
BC856AT,115
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NXP Semiconductors
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 - - - - - - - - 100 mA 125 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 150 mW - - SC-75 - PNP 400mV @ 5mA, 100mA 65 V
TTC012(Q)
TTC012(Q)
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Toshiba
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 - - - - - - - - 2 A 100 @ 300mA, 5V - - - - - - Through Hole 150°C (TJ) 1.1 W - - PW-MOLD2 - NPN 1V @ 62.5mA, 500mA 375 V
BC817K16WH6327XTSA1
BC817K16WH6327XTSA1
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Infineon Technologies
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 170MHz - - Surface Mount 150°C (TJ) 250 mW - - PG-SOT323 - NPN 700mV @ 50mA, 500mA 45 V
15C02MH-TL-E
15C02MH-TL-E
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 - - - - - - - - 1 A 300 @ 50mA, 2V - - - 440MHz - - Surface Mount 150°C (TJ) 600 mW - - 3-MCPH - NPN 280mV @ 20mA, 400mA 15 V
2SA1179N6-TB-E
2SA1179N6-TB-E
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 - - - - - - - - 150 mA 135 @ 1mA, 6V - - - 180MHz - - Surface Mount 150°C (TJ) 200 mW - - 3-CP - PNP 500mV @ 5mA, 50mA 50 V
2SA1705S-AN
2SA1705S-AN
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 - - - - - - - - 1 A 100 @ 100mA, 2V - - - 150MHz - - Through Hole 150°C (TJ) 900 mW - - 3-NMP - PNP 500mV @ 50mA, 500mA 50 V
2SA1706S-AN
2SA1706S-AN
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 - - - - - - - - 2 A 100 @ 100mA, 2V - - - 150MHz - - Through Hole 150°C (TJ) 1 W - - 3-NMP - PNP 700mV @ 50mA, 1A 50 V
2SA1709S-AN
2SA1709S-AN
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 - - - - - - - - 2 A 100 @ 100mA, 5V - - - 120MHz - - Through Hole 150°C (TJ) 1 W - - 3-NMP - PNP 600mV @ 100mA, 1A 100 V
2SA1827S-AY
2SA1827S-AY
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 - - - - - - - - 4 A 100 @ 500mA, 5V - - - 180MHz - - Through Hole - 1.5 W - - FLP - PNP 500mV @ 200mA, 2A 100 V
2SA2040-E
2SA2040-E
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 - - - - - - - - 8 A 200 @ 500mA, 2V - - - 330MHz - - Through Hole 150°C (TJ) 1 W - - TP - PNP 400mV @ 40mA, 2A 50 V
2SA2210
2SA2210
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 - - - - - - - - 20 A 150 @ 1A, 2V - - - 140MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-3SG - PNP 500mV @ 350mA, 7A 50 V
2SA2222
2SA2222
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 - - - - - - - - 10 A 150 @ 270mA, 2V - - - 230MHz - - Through Hole 150°C (TJ) 2 W - - TO-220ML - PNP 500mV @ 300mA, 6A 50 V
TIP29C-S
TIP29C-S
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Bourns
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 - - - - - - - - 1 A 15 @ 1A, 4V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - NPN 700mV @ 125mA, 1A 100 V
2SC2812N6-TB-E
2SC2812N6-TB-E
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 - - - - - - - - 150 mA 135 @ 1mA, 6V - - - 100MHz - - Surface Mount 150°C (TJ) 200 mW - - 3-CP - NPN 500mV @ 5mA, 50mA 50 V
2SC3332S-AA
2SC3332S-AA
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 - - - - - - - - 700 mA 100 @ 100mA, 5V - - - 120MHz - - Through Hole 150°C (TJ) 700 mW - - 3-NP - NPN 400mV @ 2mA, 20mA 160 V
2SC3902S
2SC3902S
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 - - - - - - - - 1.5 A 100 @ 100mA, 5V - - - 120MHz - - Through Hole 150°C (TJ) 1.5 W - - TO-126ML - NPN 450mV @ 50mA, 500mA 160 V
2SC3902T
2SC3902T
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 - - - - - - - - 1.5 A 100 @ 100mA, 5V - - - 120MHz - - Through Hole 150°C (TJ) 1.5 W - - TO-126ML - NPN 450mV @ 50mA, 500mA 160 V
2SC4027S-E
2SC4027S-E
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 - - - - - - - - 1.5 A 100 @ 100mA, 5V - - - 120MHz - - Through Hole 150°C (TJ) 1 W - - TP - NPN 450mV @ 50mA, 500mA 160 V
2SC4614T-AN
2SC4614T-AN
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 - - - - - - - - 1.5 A 100 @ 100mA, 5V - - - 120MHz - - Through Hole 150°C (TJ) 1 W - - 3-NMP - NPN 450mV @ 50mA, 500mA 160 V
2SC5291S-AY
2SC5291S-AY
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 - - - - - - - - 1.5 A 100 @ 100mA, 5V - - - 120MHz - - Through Hole - 1.5 W - - FLP - NPN 450mV @ 50mA, 500mA 160 V
2SC5706-E
2SC5706-E
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 - - - - - - - - 5 A 200 @ 500mA, 2V - - - 400MHz - - Through Hole 150°C (TJ) 800 mW - - TP - NPN 240mV @ 100mA, 2A 50 V
2SC5706-H
2SC5706-H
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 - - - - - - - - 5 A 200 @ 500mA, 2V - - - 400MHz - - Through Hole 150°C (TJ) 800 mW - - TP - NPN 240mV @ 100mA, 2A 50 V
HCT2222ATX
HCT2222ATX
TT Electronics/BI
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 - - - - - - - - - - - - - - - - Surface Mount - - - - 4-SMD - NPN - -
2SC6144
2SC6144
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 - - - - - - - - 10 A 200 @ 270mA, 2V - - - 330MHz - - Through Hole 150°C (TJ) 2 W - - TO-220ML - NPN 360mV @ 300mA, 6A 50 V
2SD1683S
2SD1683S
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 - - - - - - - - 4 A 100 @ 100mA, 2V - - - 150MHz - - Through Hole 150°C (TJ) 1.5 W - - TO-126ML - NPN 500mV @ 100mA, 2A 50 V
2SD1685G
2SD1685G
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 - - - - - - - - 5 A 280 @ 500mA, 2V - - - 120MHz - - Through Hole 150°C (TJ) 1.5 W - - TO-126ML - NPN 500mV @ 60mA, 3A 20 V
2SD1801T-TL-E
2SD1801T-TL-E
On Semiconductor
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 - - - - - - - - 2 A 100 @ 100mA, 2V - - - 150MHz - - Surface Mount 150°C (TJ) 800 mW - - TP-FA - NPN 400mV @ 50mA, 1A 50 V
2SD1816S-E
2SD1816S-E
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 - - - - - - - - 4 A 70 @ 500mA, 5V - - - 180MHz - - Through Hole 150°C (TJ) 1 W - - TP - NPN 400mV @ 200mA, 2A 100 V
DSA5G01B0L
DSA5G01B0L
Panasonic Electronic Components
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 - - - - - - - - 30 mA 70 @ 1mA, 10V - - - 300MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-F2-B - PNP 100mV @ 1mA, 10mA 20 V
DSC2001Q0L
DSC2001Q0L
Panasonic Electronic Components
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 - - - - - - - - 100 mA 210 @ 2mA, 10V - - - 150MHz - - Surface Mount 150°C (TJ) 200 mW - - MINI3-G3-B - NPN 300mV @ 10mA, 100mA 50 V
DSC2501T0L
DSC2501T0L
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Panasonic Electronic Components
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 - - - - - - - - 500 mA 200 @ 500mA, 2V - - - 150MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G3-B-B - NPN 400mV @ 20mA, 500mA 20 V
STD790AT4
STD790AT4
STMicroelectronics
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 - - - - - - - - 3 A 100 @ 500mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 15 W - - DPAK - PNP 700mV @ 100mA, 3A 30 V
2STW200
2STW200
STMicroelectronics
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 - - - - - - - - 25 A 500 @ 10A, 3V - - - - - - Through Hole 150°C (TJ) 130 W - - TO-247-3 - PNP - Darlington 3.5V @ 80mA, 20A 80 V
BDX53BFP
BDX53BFP
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STMicroelectronics
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 - - - - - - - - 8 A 750 @ 3A, 3V - - - - - - Through Hole 150°C (TJ) 29 W - - TO-220FP - NPN - Darlington 2V @ 12mA, 3A 80 V
D44H11FP
D44H11FP
STMicroelectronics
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 - - - - - - - - 10 A 40 @ 4A, 1V - - - - - - Through Hole 150°C (TJ) 36 W - - TO-220FP - NPN 1V @ 400mA, 8A 80 V
2STL2580
2STL2580
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STMicroelectronics
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 - - - - - - - - 1 A 60 @ 250mA, 5V - - - - - - Through Hole 150°C (TJ) 1.5 W - - TO-92MOD - NPN 1V @ 200mA, 1A 400 V
STX0560
STX0560
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STMicroelectronics
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 - - - - - - - - 1 A 70 @ 5mA, 5V - - - - - - Through Hole 150°C (TJ) 1.5 W - - TO-92 - NPN 1V @ 100mA, 500mA 600 V
BD441
BD441
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STMicroelectronics
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 - - - - - - - - 4 A 40 @ 500mA, 1V - - - - - - Through Hole 150°C (TJ) 36 W - - SOT-32 - NPN 800mV @ 200mA, 2A 80 V
STBV42-AP
STBV42-AP
STMicroelectronics
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 - - - - - - - - 1 A 10 @ 400mA, 5V - - - - - - Through Hole 150°C (TJ) 1 W - - TO-92AP - NPN 1.5V @ 250mA, 750mA 400 V
STBV42G-AP
STBV42G-AP
STMicroelectronics
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 - - - - - - - - 1 A 10 @ 400mA, 5V - - - - - - Through Hole 150°C (TJ) 1 W - - TO-92AP - NPN 1.5V @ 250mA, 750mA 400 V
STX112-AP
STX112-AP
STMicroelectronics
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 - - - - - - - - 2 A 1000 @ 1A, 4V - - - - - - Through Hole 150°C (TJ) 1.2 W - - TO-92AP - NPN - Darlington 2.5V @ 8mA, 2A 100 V
STD724T4
STD724T4
STMicroelectronics
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 - - - - - - - - 3 A 80 @ 1A, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 15 W - - DPAK - NPN 1.1V @ 150mA, 3A 30 V
STF826
STF826
STMicroelectronics
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 - - - - - - - - 3 A 100 @ 100mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 1.4 W - - SOT-89-3 - PNP 1.1V @ 150mA, 3A 30 V
KSH3055TF
KSH3055TF
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 - - - - - - - - 10 A 20 @ 4A, 4V - - - 2MHz - - Surface Mount 150°C (TJ) 1.75 W - - D-Pak - NPN 8V @ 3.3A, 10A 60 V
BC81840MTF
BC81840MTF
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 - - - - - - - - 800 mA 250 @ 100mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 310 mW - - SOT-23-3 - NPN 700mV @ 50mA, 500mA 25 V
2SB560E-MP-AE
2SB560E-MP-AE
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Showing 15751-15800 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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