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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
KSA473YTSTU
KSA473YTSTU
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 3 A 120 @ 500mA, 2V 100MHz Through Hole 150°C (TJ) 10 W TO-220-3 PNP 800mV @ 200mA, 2A 30 V
KSA473OTU
KSA473OTU
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 3 A 70 @ 500mA, 2V 100MHz Through Hole 150°C (TJ) 10 W TO-220-3 PNP 800mV @ 200mA, 2A 30 V
KSD1691OSTU
KSD1691OSTU
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 5 A 100 @ 2A, 1V - Through Hole 150°C (TJ) 1.3 W TO-126-3 NPN 300mV @ 200mA, 2A 60 V
BC847BW/ZLX
BC847BW/ZLX
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Nexperia USA Inc.
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 - - - Surface Mount - - 6-TSSOP - - -
KSA1015YBU
KSA1015YBU
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 150 mA 120 @ 2mA, 6V 80MHz Through Hole 150°C (TJ) 400 mW TO-92-3 PNP 300mV @ 10mA, 100mA 50 V
KSA1015OTA
KSA1015OTA
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 150 mA 70 @ 2mA, 6V 80MHz Through Hole 150°C (TJ) 400 mW TO-92-3 PNP 300mV @ 10mA, 100mA 50 V
KSE803S
KSE803S
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 4 A 750 @ 2A, 3V - Through Hole 150°C (TJ) 40 W TO-126-3 NPN - Darlington 2.8V @ 40mA, 2A 80 V
KSE800STSSTU
KSE800STSSTU
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 4 A 750 @ 1.5A, 3V - Through Hole 150°C (TJ) 40 W TO-126-3 NPN - Darlington 2.5V @ 30mA, 1.5A 60 V
KSE800S
KSE800S
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 4 A 750 @ 1.5A, 3V - Through Hole 150°C (TJ) 40 W TO-126-3 NPN - Darlington 2.5V @ 30mA, 1.5A 60 V
KSE802STU
KSE802STU
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 4 A 750 @ 1.5A, 3V - Through Hole 150°C (TJ) 40 W TO-126-3 NPN - Darlington 2.5V @ 30mA, 1.5A 80 V
KSE801STU
KSE801STU
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 4 A 750 @ 2A, 3V - Through Hole 150°C (TJ) 40 W TO-126-3 NPN - Darlington 2.8V @ 40mA, 2A 60 V
KSE803STU
KSE803STU
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 4 A 750 @ 2A, 3V - Through Hole 150°C (TJ) 40 W TO-126-3 NPN - Darlington 2.8V @ 40mA, 2A 80 V
KSC1507Y
KSC1507Y
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 200 µA 120 @ 10mA, 10V 80MHz Through Hole 150°C (TJ) 15 W TO-220-3 NPN 2V @ 5mA, 50mA 300 V
KSC1507R
KSC1507R
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 200 µA 40 @ 10mA, 10V 80MHz Through Hole 150°C (TJ) 15 W TO-220-3 NPN 2V @ 5mA, 50mA 300 V
KSC1507O
KSC1507O
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 200 µA 70 @ 10mA, 10V 80MHz Through Hole 150°C (TJ) 15 W TO-220-3 NPN 2V @ 5mA, 50mA 300 V
KSC1507OTU
KSC1507OTU
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 200 µA 70 @ 10mA, 10V 80MHz Through Hole 150°C (TJ) 15 W TO-220-3 NPN 2V @ 5mA, 50mA 300 V
2SC2463DETL-E
2SC2463DETL-E
Renesas
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 - - - - - - - - - -
KSH29ITU
KSH29ITU
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 1 A 15 @ 1A, 4V 3MHz Through Hole 150°C (TJ) 1.56 W I-PAK NPN 700mV @ 125mA, 1A 40 V
KSC3076YTU
KSC3076YTU
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 2 A 120 @ 500mA, 2V 100MHz Through Hole 150°C (TJ) 1 W I-PAK NPN 500mV @ 50mA, 1A 50 V
KSE703STU
KSE703STU
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 4 A 750 @ 2A, 3V - Through Hole 150°C (TJ) 40 W TO-126-3 PNP - Darlington 2.8V @ 40mA, 2A 80 V
MJD29CTF
MJD29CTF
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 1 A 15 @ 1A, 4V 3MHz Surface Mount 150°C (TJ) 1.56 W D-Pak NPN 700mV @ 125mA, 1A 100 V
KSH29CITU
KSH29CITU
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 1 A 15 @ 1A, 4V 3MHz Through Hole 150°C (TJ) 1.56 W I-PAK NPN 700mV @ 125mA, 1A 100 V
KSB1151YSTSSTU
KSB1151YSTSSTU
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 5 A 160 @ 2A, 1V - Through Hole 150°C (TJ) 1.3 W TO-126-3 PNP 300mV @ 200mA, 2A 60 V
TIP29CTSTU
TIP29CTSTU
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 1 A 15 @ 1A, 4V 3MHz Through Hole 150°C (TJ) 2 W TO-220-3 NPN 700mV @ 125mA, 1A 100 V
TIP29CTU
TIP29CTU
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 1 A 15 @ 1A, 4V 3MHz Through Hole 150°C (TJ) 2 W TO-220-3 NPN 700mV @ 125mA, 1A 100 V
TIP29ATU
TIP29ATU
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 1 A 15 @ 1A, 4V 3MHz Through Hole 150°C (TJ) 2 W TO-220-3 NPN 700mV @ 125mA, 1A 60 V
KSC2073H2
KSC2073H2
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 1.5 A 40 @ 500mA, 10V 4MHz Through Hole 150°C (TJ) 25 W TO-220-3 NPN 1V @ 50mA, 500mA 150 V
KSA1304OTU
KSA1304OTU
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 1.5 A 40 @ 500mA, 10V 4MHz Through Hole 150°C (TJ) 20 W TO-220F-3 PNP 1.5V @ 50mA, 500mA 150 V
KSC2073
KSC2073
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 1.5 A 40 @ 500mA, 10V 4MHz Through Hole 150°C (TJ) 25 W TO-220-3 NPN 1V @ 50mA, 500mA 150 V
BC847CW/ZLX
BC847CW/ZLX
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Nexperia USA Inc.
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 - - - Surface Mount - - SOT-323 - - -
KSC2073H1TU
KSC2073H1TU
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 1.5 A 40 @ 500mA, 10V 4MHz Through Hole 150°C (TJ) 25 W TO-220-3 NPN 1V @ 50mA, 500mA 150 V
KSA1241YTU
KSA1241YTU
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 2 A 120 @ 500mA, 2V 100MHz Through Hole 150°C (TJ) 1 W I-PAK PNP 500mV @ 50mA, 1A 50 V
TIP30CTU
TIP30CTU
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 1 A 15 @ 1A, 4V 3MHz Through Hole 150°C (TJ) 2 W TO-220-3 PNP 700mV @ 125mA, 1A 100 V
KSD288O
KSD288O
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 3 A 70 @ 500mA, 5V - Through Hole 150°C (TJ) 25 W TO-220-3 NPN 1V @ 100mA, 1A 55 V
KSA940H2
KSA940H2
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 1.5 A 40 @ 500mA, 10V 4MHz Through Hole 150°C (TJ) 1.5 W TO-220-3 PNP 1.5V @ 50mA, 500mA 150 V
KSD288YTU
KSD288YTU
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 3 A 120 @ 500mA, 5V - Through Hole 150°C (TJ) 25 W TO-220-3 NPN 1V @ 100mA, 1A 55 V
KSD288Y
KSD288Y
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 3 A 120 @ 500mA, 5V - Through Hole 150°C (TJ) 25 W TO-220-3 NPN 1V @ 100mA, 1A 55 V
KSD288WTU
KSD288WTU
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 3 A 40 @ 500mA, 5V - Through Hole 150°C (TJ) 25 W TO-220-3 NPN 1V @ 100mA, 1A 55 V
KSA940H1TU
KSA940H1TU
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 1.5 A 40 @ 500mA, 10V 4MHz Through Hole 150°C (TJ) 1.5 W TO-220-3 PNP 1.5V @ 50mA, 500mA 150 V
KSA940TSTU
KSA940TSTU
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 1.5 A 40 @ 500mA, 10V 4MHz Through Hole 150°C (TJ) 1.5 W TO-220-3 PNP 1.5V @ 50mA, 500mA 150 V
KSD288W
KSD288W
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 3 A 40 @ 500mA, 5V - Through Hole 150°C (TJ) 25 W TO-220-3 NPN 1V @ 100mA, 1A 55 V
KSD288OTU
KSD288OTU
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 3 A 70 @ 500mA, 5V - Through Hole 150°C (TJ) 25 W TO-220-3 NPN 1V @ 100mA, 1A 55 V
KSE13003TATU
KSE13003TATU
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 1.5 A 8 @ 500mA, 2V 4MHz Through Hole 150°C (TJ) 20 W TO-220-3 NPN 3V @ 500mA, 1.5A 400 V
KSD1221OTU
KSD1221OTU
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 3 A 60 @ 500mA, 5V 3MHz Through Hole 150°C (TJ) 1 W I-PAK NPN 1V @ 300mA, 3A 60 V
KSD2058YTU
KSD2058YTU
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 3 A 100 @ 500mA, 5V 400kHz Through Hole 150°C (TJ) 1.5 W TO-220F-3 NPN 1.5V @ 200mA, 2A 60 V
KSD2058YTSTU
KSD2058YTSTU
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 3 A 100 @ 500mA, 5V 400kHz Through Hole 150°C (TJ) 1.5 W TO-220F-3 NPN 1.5V @ 200mA, 2A 60 V
KSD1221GTU
KSD1221GTU
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 3 A 150 @ 500mA, 5V 3MHz Through Hole 150°C (TJ) 1 W I-PAK NPN 1V @ 300mA, 3A 60 V
KSD1221YTU
KSD1221YTU
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 3 A 100 @ 500mA, 5V 3MHz Through Hole 150°C (TJ) 1 W I-PAK NPN 1V @ 300mA, 3A 60 V
KSD1222TU
KSD1222TU
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 3 A 1000 @ 3A, 2V - Through Hole 150°C (TJ) 1 W I-PAK NPN - Darlington 1.5V @ 4mA, 2A 40 V
KSH122ITU
KSH122ITU
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 8 A 1000 @ 4A, 4V - Through Hole 150°C (TJ) 1.75 W I-PAK NPN - Darlington 4V @ 80mA, 8A 100 V
Showing 15751-15800 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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