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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
APT13003DZTR-G1
APT13003DZTR-G1
Diodes Incorporated
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 - - - - - - - - 1.5 A 5 @ 1A, 2V - - - 4MHz - - Through Hole -65°C ~ 150°C (TJ) 1.1 W - - TO-92 - NPN 400mV @ 250mA, 1A 450 V
APT13003HZTR-G1
APT13003HZTR-G1
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Diodes Incorporated
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 - - - - - - - - 1.5 A 13 @ 500mA, 2V - - - 4MHz - - Through Hole -65°C ~ 150°C (TJ) 1.1 W - - TO-92 - NPN 400mV @ 250mA, 1A 465 V
ZX5T851ASTZ
ZX5T851ASTZ
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Diodes Incorporated
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 - - - - - - - - 4.5 A 100 @ 2A, 1V - - - 130MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - E-Line (TO-92 compatible) - NPN 210mV @ 200mA, 5A 60 V
2DB1132P-13
2DB1132P-13
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Diodes Incorporated
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 - - - - - - - - 1 A 82 @ 100mA, 3V - - - 190MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-89-3 - PNP 500mV @ 50mA, 500mA 32 V
2DA2018-7
2DA2018-7
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Diodes Incorporated
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 - - - - - - - - 500 mA 270 @ 10mA, 2V - - - 260MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SOT-523 - PNP 250mV @ 10mA, 200mA 12 V
DN0150BLP4-7
DN0150BLP4-7
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Diodes Incorporated
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 - - - - - - - - 100 mA 200 @ 2mA, 6V - - - 60MHz - - Surface Mount -55°C ~ 150°C (TJ) 450 mW - - X2-DFN1006-3 - NPN 250mV @ 10mA, 100mA 50 V
MPSA42-AP
MPSA42-AP
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Micro Commercial
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 - - - - - - - - 300 mA 80 @ 10mA, 10V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 500mV @ 2mA, 20mA 300 V
3STF1640
3STF1640
STMicroelectronics
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 - - - - - - - - 6 A 350 @ 1A, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 1.5 W - - SOT-89 - NPN 170mV @ 300mA, 6A 40 V
2SCR523V1T2L
2SCR523V1T2L
ROHM Semiconductor
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NSVBSP19AT1G
NSVBSP19AT1G
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On Semiconductor
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 - - - - - - - - 100 mA 40 @ 20mA, 10V - - - 70MHz - - Surface Mount -65°C ~ 150°C (TJ) 800 mW - - SOT-223 (TO-261) - NPN 500mV @ 4mA, 50mA 350 V
APT13005DI-G1
APT13005DI-G1
Download Datasheet for APT13005DI-G1
Diodes Incorporated
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 - - - - - - - - 4 A 8 @ 2A, 5V - - - 4MHz - - Through Hole -65°C ~ 150°C (TJ) 25 W - - TO-251 - NPN 900mV @ 1A, 4A 450 V
APT13005DTF-G1
APT13005DTF-G1
Download Datasheet for APT13005DTF-G1
Diodes Incorporated
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 - - - - - - - - 4 A 8 @ 2A, 5V - - - 4MHz - - Through Hole -65°C ~ 150°C (TJ) 28 W - - TO-220F-3 - NPN 900mV @ 1A, 4A 450 V
APT13005DT-G1
APT13005DT-G1
Download Datasheet for APT13005DT-G1
Diodes Incorporated
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 - - - - - - - - 4 A 8 @ 2A, 5V - - - 4MHz - - Through Hole -65°C ~ 150°C (TJ) 75 W - - TO-220-3 - NPN 900mV @ 1A, 4A 450 V
ICA21V06X1SA1
ICA21V06X1SA1
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Infineon Technologies
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DXT13003DK-13
DXT13003DK-13
Download Datasheet for DXT13003DK-13
Diodes Incorporated
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 - - - - - - - - 1.5 A 16 @ 500mA, 2V - - - 4MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.6 W - - TO-252-3 - NPN 400mV @ 250mA, 1A 450 V
2STR1240
2STR1240
STMicroelectronics
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2STR2240
2STR2240
STMicroelectronics
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2N2218
2N2218
Microchip Technology
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Through Hole -55°C ~ 200°C (TJ) 800 mW - - TO-39 (TO-205AD) - NPN 1.6V @ 50mA, 500mA 30 V
JAN2N2218A
JAN2N2218A
Microchip Technology
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Through Hole -55°C ~ 200°C (TJ) 800 mW - - TO-39 (TO-205AD) - NPN 1V @ 50mA, 500mA 50 V
JANTXV2N2218A
JANTXV2N2218A
Microchip Technology
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Through Hole -55°C ~ 200°C (TJ) 800 mW - - TO-39 (TO-205AD) - NPN 1V @ 50mA, 500mA 50 V
2N2432A
2N2432A
Microchip Technology
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 - - - - - - - - 100 mA 80 @ 1mA, 5V - - - - - - Through Hole -65°C ~ 175°C (TJ) 300 mW - - TO-18 (TO-206AA) - NPN - 30 V
JANTX2N2904
JANTX2N2904
Microchip Technology
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 800 mW - - TO-39 (TO-205AD) - PNP 1.6V @ 50mA, 500mA 40 V
2N2944AUB
2N2944AUB
Microsemi Corporation
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 - - - - - - - - 100 mA 100 @ 1mA, 500mV - - - - - - Surface Mount -65°C ~ 200°C (TJ) 400 mW - - UB - PNP - 10 V
2N2945AUB
2N2945AUB
Microchip Technology
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 - - - - - - - - 100 mA 70 @ 1mA, 500mV - - - - - - Surface Mount -65°C ~ 200°C (TJ) 400 mW - - UB - PNP - 20 V
JANTXV2N3055
JANTXV2N3055
Microchip Technology
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 - - - - - - - - 15 A 20 @ 4A, 4V - - - - - - Through Hole -65°C ~ 200°C (TJ) 6 W - - TO-3 (TO-204AA) - NPN 2V @ 3.3A, 10A 70 V
2N3251AUB
2N3251AUB
Microsemi Corporation
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 360 mW - - UB - PNP 500mV @ 5mA, 50mA 60 V
ICA22V11X1SA1
ICA22V11X1SA1
Download Datasheet for ICA22V11X1SA1
Infineon Technologies
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JANTXV2N3419
JANTXV2N3419
Microchip Technology
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 - - - - - - - - 3 A 20 @ 1A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - NPN 500mV @ 200mA, 2A 80 V
JAN2N3420
JAN2N3420
Microchip Technology
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 - - - - - - - - 3 A 40 @ 1A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN 500mV @ 200mA, 2A 60 V
JANTX2N3420
JANTX2N3420
Microchip Technology
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 - - - - - - - - 3 A 40 @ 1A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - NPN 500mV @ 200mA, 2A 60 V
JANTX2N3421S
JANTX2N3421S
Microchip Technology
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 - - - - - - - - 3 A 40 @ 1A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN 500mV @ 200mA, 2A 80 V
JANTXV2N3421S
JANTXV2N3421S
Microchip Technology
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 - - - - - - - - 3 A 40 @ 1A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN 500mV @ 200mA, 2A 80 V
2N3485A
2N3485A
Microchip Technology
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 400 mW - - TO-46 (TO-206AB) - PNP 1.6V @ 50mA, 500mA 60 V
2N3499
2N3499
Microchip Technology
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 - - - - - - - - 500 mA 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN 600mV @ 30mA, 300mA 100 V
2N3634UB
2N3634UB
Microchip Technology
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 - - - - - - - - 1 A 50 @ 50mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - 3-SMD - PNP 600mV @ 5mA, 50mA 140 V
JANTXV2N3635
JANTXV2N3635
Microchip Technology
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 - - - - - - - - 1 A 100 @ 50mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 600mV @ 5mA, 50mA 140 V
2N3635UB
2N3635UB
Microchip Technology
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 - - - - - - - - 1 A 100 @ 50mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1.5 W - - 3-SMD - PNP 600mV @ 5mA, 50mA 140 V
JANTX2N3635UB
JANTX2N3635UB
Microchip Technology
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 - - - - - - - - 1 A 100 @ 50mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1.5 W - - 3-SMD - PNP 600mV @ 5mA, 50mA 140 V
JANTX2N3637UB
JANTX2N3637UB
Microchip Technology
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 - - - - - - - - 1 A 100 @ 50mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1.5 W - - 3-SMD - PNP 600mV @ 5mA, 50mA 175 V
JAN2N3715
JAN2N3715
Microchip Technology
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 - - - - - - - - 10 A 30 @ 3A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 5 W - - TO-3 (TO-204AA) - NPN 2.5V @ 2A, 10A 60 V
JANTXV2N3740
JANTXV2N3740
Microchip Technology
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 - - - - - - - - 4 A 30 @ 250mA, 1V - - - - - - Through Hole -65°C ~ 200°C (TJ) 25 W - - TO-66 (TO-213AA) - PNP 600mV @ 125mA, 1A 60 V
JANTX2N3749
JANTX2N3749
Microchip Technology
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 - - - - - - - - 5 A 40 @ 1A, 2V - - - - - - Chassis, Stud Mount -65°C ~ 200°C (TJ) 2 W - - TO-111 - NPN 1.5V @ 500mA, 5A 80 V
JANTXV2N3749
JANTXV2N3749
Microchip Technology
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 - - - - - - - - 5 A 40 @ 1A, 2V - - - - - - Chassis, Stud Mount -65°C ~ 200°C (TJ) 2 W - - TO-111 - NPN 1.5V @ 500mA, 5A 80 V
JAN2N3867
JAN2N3867
Microchip Technology
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 - - - - - - - - 3 mA 40 @ 1.5A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - PNP 1.5V @ 250mA, 2.5A 40 V
JANTXV2N3867
JANTXV2N3867
Microchip Technology
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 - - - - - - - - 3 mA 40 @ 1.5A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - PNP 1.5V @ 250mA, 2.5A 40 V
JAN2N3868
JAN2N3868
Microchip Technology
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 - - - - - - - - 3 mA 30 @ 1.5A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - PNP 1.5V @ 250mA, 2.5A 60 V
JANTX2N3999
JANTX2N3999
Microchip Technology
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 - - - - - - - - 10 A 80 @ 1A, 2V - - - - - - Chassis, Stud Mount -65°C ~ 200°C (TJ) 2 W - - TO-59 - NPN 2V @ 500mA, 5A 80 V
2N3960
2N3960
Microsemi Corporation
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 - - - - - - - - 10µA (ICBO) 60 @ 10mA, 1V - - - - - - Through Hole -65°C ~ 200°C (TJ) 400 mW - - TO-18 (TO-206AA) - NPN 300mV @ 3mA, 30mA 12 V
JAN2N3960
JAN2N3960
Microsemi Corporation
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 - - - - - - - - 10µA (ICBO) 60 @ 10mA, 1V - - - - - - Through Hole -65°C ~ 200°C (TJ) 400 mW - - TO-18 (TO-206AA) - NPN 300mV @ 3mA, 30mA 12 V
JANTXV2N3960
JANTXV2N3960
Microsemi Corporation
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 - - - - - - - - 10µA (ICBO) 60 @ 10mA, 1V - - - - - - Through Hole -65°C ~ 200°C (TJ) 400 mW - - TO-18 (TO-206AA) - NPN 300mV @ 3mA, 30mA 12 V
Showing 15901-15950 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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