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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
MJB44H11
MJB44H11
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On Semiconductor
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 - - - - - - - - 10 A 40 @ 4A, 1V - - - 50MHz - - Surface Mount -55°C ~ 150°C (TJ) 2 W - - D²PAK - NPN 1V @ 400mA, 8A 80 V
MJB41C
MJB41C
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On Semiconductor
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 - - - - - - - - 6 A 15 @ 3A, 4V - - - 3MHz - - Surface Mount -65°C ~ 150°C (TJ) 2 W - - D²PAK - NPN 1.5V @ 600mA, 6A 100 V
MJW1302A
MJW1302A
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On Semiconductor
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 - - - - - - - - 15 A 50 @ 7A, 5V - - - 30MHz - - Through Hole -65°C ~ 150°C (TJ) 200 W - - TO-247-3 - PNP 2V @ 1A, 10A 230 V
MJW21194
MJW21194
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On Semiconductor
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 - - - - - - - - 16 A 20 @ 8A, 5V - - - 4MHz - - Through Hole -65°C ~ 150°C (TJ) 200 W - - TO-247-3 - NPN 4V @ 3.2A, 16A 250 V
MJW21195
MJW21195
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On Semiconductor
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 - - - - - - - - 16 A 20 @ 8A, 5V - - - 4MHz - - Through Hole -65°C ~ 150°C (TJ) 200 W - - TO-247-3 - PNP 3V @ 3.2A, 16A 250 V
STN749
STN749
STMicroelectronics
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 - - - - - - - - 3 A 100 @ 1A, 2V - - - - - - Surface Mount 150°C (TJ) 1.6 W - - SOT-223 - PNP 600mV @ 300mA, 3A 25 V
MJW21196
MJW21196
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On Semiconductor
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 - - - - - - - - 16 A 20 @ 8A, 5V - - - 4MHz - - Through Hole -65°C ~ 150°C (TJ) 200 W - - TO-247-3 - NPN 3V @ 3.2A, 16A 250 V
STD1805-1
STD1805-1
STMicroelectronics
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 - - - - - - - - 5 A 200 @ 100mA, 2V - - - 150MHz - - Through Hole 150°C (TJ) 15 W - - I-PAK - NPN 600mV @ 200mA, 5A 60 V
STFN42
STFN42
STMicroelectronics
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 - - - - - - - - 1 A 10 @ 400mA, 5V - - - - - - Surface Mount 150°C (TJ) 1.4 W - - SOT-89-3 - NPN 1.5V @ 250mA, 750mA 400 V
STW13009
STW13009
STMicroelectronics
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 - - - - - - - - 12 A 15 @ 5A, 5V - - - - - - Through Hole 150°C (TJ) 125 W - - TO-247-3 - NPN 2.5V @ 3A, 12A 400 V
ZX5T869GTA
ZX5T869GTA
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Diodes Incorporated
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 - - - - - - - - 7 A 300 @ 1A, 1V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 3 W - - SOT-223-3 - NPN 220mV @ 150mA, 6.5A 25 V
BC858BL3E6327
BC858BL3E6327
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Infineon Technologies
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 250MHz - - Surface Mount 150°C (TJ) 250 mW - - PG-SOT23 - PNP 650mV @ 5mA, 100mA 30 V
MMBT3904_NL
MMBT3904_NL
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On Semiconductor
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3 - NPN 300mV @ 5mA, 50mA 40 V
BC817-16
BC817-16
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Diodes Incorporated
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 - - - - - - - - 800 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -65°C ~ 150°C (TJ) 310 mW - - SOT-23-3 - NPN 700mV @ 50mA, 500mA 45 V
2SA21400P
2SA21400P
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Panasonic Electronic Components
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 - - - - - - - - 1.5 A 120 @ 100mA, 5V - - - 100MHz - - Through Hole 150°C (TJ) 2 W - - TO-220D-A1 - PNP 500mV @ 100mA, 1A 180 V
90024-02TX
90024-02TX
Microchip Technology
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 - - - - - - - - - - - - - - - - Through Hole - - - - TO-3 - - - -
2SA21400Q
2SA21400Q
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Panasonic Electronic Components
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 - - - - - - - - 1.5 A 60 @ 100mA, 5V - - - 100MHz - - Through Hole 150°C (TJ) 2 W - - TO-220D-A1 - PNP 500mV @ 100mA, 1A 180 V
2SC59930P
2SC59930P
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Panasonic Electronic Components
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 - - - - - - - - 1.5 A 120 @ 100mA, 5V - - - 130MHz - - Through Hole 150°C (TJ) 2 W - - TO-220D-A1 - NPN 500mV @ 100mA, 1A 180 V
2SC59930Q
2SC59930Q
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Panasonic Electronic Components
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 - - - - - - - - 1.5 A 60 @ 100mA, 5V - - - 130MHz - - Through Hole 150°C (TJ) 2 W - - TO-220D-A1 - NPN 500mV @ 100mA, 1A 180 V
2SC4809J0L
2SC4809J0L
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Panasonic Electronic Components
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 - - - - - - - - 50 mA 75 @ 5mA, 4V - - - 2.7GHz - - Surface Mount 125°C (TJ) 125 mW - - SSMini3-F1 - NPN 500mV @ 4mA, 20mA 10 V
2SC581300L
2SC581300L
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Panasonic Electronic Components
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 - - - - - - - - 1.5 A 200 @ 100mA, 2V - - - 180MHz - - Surface Mount 150°C (TJ) 600 mW - - Mini3-G1 - NPN 500mV @ 20mA, 1A 80 V
2SD262100L
2SD262100L
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Panasonic Electronic Components
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 - - - - - - - - 20 mA 400 @ 2mA, 10V - - - 200MHz - - Surface Mount 125°C (TJ) 100 mW - - SSSMini3-F1 - NPN 200mV @ 1mA, 10mA 100 V
MMBT3906_NL
MMBT3906_NL
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On Semiconductor
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3 - PNP 400mV @ 5mA, 50mA 40 V
BCP6925TA
BCP6925TA
Diodes Incorporated
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 - - - - - - - - 1 A 160 @ 500mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 2 W - - SOT-223-3 - PNP 500mV @ 100mA, 1A 20 V
ZX5T851ZTA
ZX5T851ZTA
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Diodes Incorporated
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 - - - - - - - - 5 A 100 @ 2A, 1V - - - 130MHz - - Surface Mount -55°C ~ 150°C (TJ) 2.1 W - - SOT-89-3 - NPN 230mV @ 300mA, 6A 60 V
PZT3904,115
PZT3904,115
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NXP Semiconductors
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount 150°C (TJ) 1.05 W - - SC-73 - NPN 200mV @ 5mA, 50mA 40 V
PZT3906,115
PZT3906,115
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NXP Semiconductors
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 - - - - - - - - 100 mA 100 @ 10mA, 1V - - - 250MHz - - Surface Mount 150°C (TJ) 1.05 W - - SC-73 - PNP 200mV @ 5mA, 50mA 40 V
STX790A-AP
STX790A-AP
STMicroelectronics
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 - - - - - - - - 3 A 100 @ 500mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92AP - PNP 700mV @ 100mA, 3A 30 V
2N3904,116
2N3904,116
NXP Semiconductors
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 200mV @ 5mA, 50mA 40 V
2N3906,116
2N3906,116
NXP Semiconductors
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 200mV @ 5mA, 50mA 40 V
2N4401,116
2N4401,116
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NXP Semiconductors
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 - - - - - - - - 600 mA 100 @ 150mA, 1V - - - 250MHz - - Through Hole 150°C (TJ) 630 mW - - TO-92-3 - NPN 750mV @ 50mA, 500mA 40 V
BC337-16,126
BC337-16,126
Download Datasheet for BC337-16,126
NXP Semiconductors
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 50mA, 500mA 45 V
BC337-25,126
BC337-25,126
Download Datasheet for BC337-25,126
NXP Semiconductors
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 50mA, 500mA 45 V
PN2222A,116
PN2222A,116
NXP Semiconductors
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 1V @ 50mA, 500mA 40 V
PN2907A,116
PN2907A,116
NXP Semiconductors
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 1.6V @ 50mA, 500mA 60 V
JANTXV2N3724UB
JANTXV2N3724UB
Microchip Technology
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 - - - - - - - - 500 mA - - - - - - - Surface Mount 200°C (TJ) - - - UB - NPN - 30 V
BC550C B1G
BC550C B1G
Taiwan Semiconductor
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 45 V
KTC3198-BL B1G
KTC3198-BL B1G
Taiwan Semiconductor
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 - - - - - - - - 150 mA 70 @ 2mA, 6V - - - 80MHz - - Through Hole -55°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN 250mV @ 10mA, 100mA 50 V
KTC3198-GR B1G
KTC3198-GR B1G
Taiwan Semiconductor
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 - - - - - - - - 150 mA 70 @ 2mA, 6V - - - 80MHz - - Through Hole -55°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN 250mV @ 10mA, 100mA 50 V
KTC3198-O B1G
KTC3198-O B1G
Taiwan Semiconductor
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 - - - - - - - - 150 mA 70 @ 2mA, 6V - - - 80MHz - - Through Hole -55°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN 250mV @ 10mA, 100mA 50 V
KTC3198-Y B1G
KTC3198-Y B1G
Taiwan Semiconductor
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 - - - - - - - - 150 mA 70 @ 2mA, 6V - - - 80MHz - - Through Hole -55°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN 250mV @ 10mA, 100mA 50 V
TS13002ACT B0G
TS13002ACT B0G
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Taiwan Semiconductor
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 - - - - - - - - 300 mA 25 @ 100mA, 10V - - - 4MHz - - Through Hole 150°C (TJ) 600 mW - - TO-92 - NPN 1.5V @ 20mA, 200mA 400 V
TS13005CK B0G
TS13005CK B0G
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Taiwan Semiconductor
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 - - - - - - - - 3 A 24 @ 425mA, 2V - - - - - - Through Hole 150°C (TJ) 20 W - - TO-126 - NPN 1.5V @ 500mA, 2.5A 400 V
TSA894CT B0G
TSA894CT B0G
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Taiwan Semiconductor
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 - - - - - - - - 150 mA 150 @ 1mA, 10V - - - 50MHz - - Through Hole 150°C (TJ) 1 W - - TO-92 - PNP 500mV @ 10mA, 50mA 500 V
TSC966CT B0G
TSC966CT B0G
Taiwan Semiconductor
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 - - - - - - - - 300 mA 100 @ 1mA, 5V - - - 50MHz - - Through Hole 150°C (TJ) 1 W - - TO-92 - NPN 1V @ 5mA, 50mA 400 V
6385_2N2907A
6385_2N2907A
On Semiconductor
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 - - - - - - - - 600 mA 100 @ 1mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-18 - PNP 1.6V @ 50mA, 500mA 60 V
6585_2N4209
6585_2N4209
On Semiconductor
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 - - - - - - - - 50 mA 35 @ 1mA, 5V - - - 850MHz - - Surface Mount 200°C (TJ) 300 mW - - Die - PNP 800mV @ 100µA, 1mA 15 V
6685_2N3906
6685_2N3906
On Semiconductor
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 - - - - - - - - 200 mA 100 @ 10mA, 10V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 625 mW - - Die - PNP 400mV @ 5mA, 50mA 40 V
6785_2N4033
6785_2N4033
On Semiconductor
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 - - - - - - - - 1 A 75 @ 100µA, 5V - - - - - - Surface Mount 200°C (TJ) 800 mW - - Die - PNP 1V @ 100mA, 1A 80 V
BC846B/DG/B4R
BC846B/DG/B4R
Download Datasheet for BC846B/DG/B4R
Nexperia USA Inc.
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 400mV @ 5mA, 100mA 65 V
Showing 15251-15300 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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