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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2SA1772E-TL-E
2SA1772E-TL-E
On Semiconductor
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2SD1725
2SD1725
Sanyo Denki
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D72F5T1
D72F5T1
Harris Semiconductor
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 - - - - - - - - 5 A 70 @ 1A, 1V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1 W - - I-PAK - NPN 400mV @ 150mA, 3A 50 V
D72F5T2
D72F5T2
Harris Semiconductor
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 - - - - - - - - 5 A 70 @ 1A, 1V - - - - - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - TO-252-3 (DPAK) - NPN 400mV @ 150mA, 3A 50 V
2SA1824S-AY
2SA1824S-AY
Sanyo Denki
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2SA2044-E
2SA2044-E
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CPH3148-TL-E
CPH3148-TL-E
On Semiconductor
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 - - - - - - - - 2 A 200 @ 100mA, 5V - - - 260MHz - - Surface Mount - 900 mW - - 3-CPH - PNP 240mV @ 100mA, 1A 100 V
2SA2044-TL-E
2SA2044-TL-E
Sanyo Denki
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LB1214-E
LB1214-E
Sanyo Denki
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CPH3237-TL-E
CPH3237-TL-E
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 - - - - - - - - 6 A 250 @ 500mA, 2V - - - 250MHz - - Surface Mount - 900 mW - - 3-CPH - NPN 120mV @ 60mA, 3A 15 V
D42C11X
D42C11X
Harris Semiconductor
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CPH5701-TL-E
CPH5701-TL-E
Sanyo Denki
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MJE18002D2
MJE18002D2
Motorola Semicondutor
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 - - - - - - - - 2 A 14 @ 400mA, 1V - - - 13MHz - - Through Hole -65°C ~ 150°C (TJ) 50 W - - TO-220-3 - NPN 750mV @ 200mA, 1A 450 V
2SB507E
2SB507E
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2SB507D
2SB507D
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D40V3121
D40V3121
Harris Semiconductor
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2SC4572-RA7
2SC4572-RA7
Sanyo Denki
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NJVMJK44H11TWG
NJVMJK44H11TWG
On Semiconductor
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 - - - - - - - - 8 A 60 @ 2A, 1V - - - 85MHz - - Surface Mount -65°C ~ 150°C (TJ) 20 W - - LFPAK4 (5x6) - NPN 1V @ 400mA, 8A 80 V
ZXTP2008ZQTA
ZXTP2008ZQTA
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Diodes Incorporated
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 - - - - - - - - 5.5 A 100 @ 1A, 1V - - - 110MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.5 W - - SOT-89-3 - PNP 175mV @ 500mA, 5.5A 30 V
KSE13003TH2ATU
KSE13003TH2ATU
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On Semiconductor
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 - - - - - - - - 1.5 A 14 @ 500mA, 2V - - - 4MHz - - Through Hole 150°C (TJ) 20 W - - TO-220-3 - NPN 3V @ 500mA, 1.5A 400 V
2SA1562-TL-E
2SA1562-TL-E
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2SB1166S
2SB1166S
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D43C2
D43C2
Harris Semiconductor
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 - - - - - - - - 3 A 40 @ 200mA, 1V - - - 40MHz - - Through Hole -55°C ~ 150°C (TJ) 2.1 W - - TO-202AB - PNP 500mV @ 50mA, 1A 30 V
2N3019
2N3019
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Solid State Devices Inc (SSDI)
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 - - - - - - - - 1 A 100 @ 150mA, 10V - - - 100MHz - - Through Hole 200°C (TJ) 800 mW - - TO-39 - NPN 500mV @ 50mA, 500mA 80 V
2N3700
2N3700
Solid State Devices Inc (SSDI)
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 - - - - - - - - 1 A 100 @ 150mA, 10V - - - 400MHz - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 - NPN 500mV @ 50mA, 500mA 80 V
BFU590Q115
BFU590Q115
NXP Semiconductors
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BUT11ATU-ON
BUT11ATU-ON
On Semiconductor
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 - - - - - - - - 5 A - - - - - - - Through Hole 150°C (TJ) 100 W - - TO-220-3 - NPN 1.5V @ 500mA, 2.5A 450 V
2SB880
2SB880
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FJPF5304DTU
FJPF5304DTU
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2SD2223-E-SY
2SD2223-E-SY
Sanyo Denki
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2SD2318TLU
2SD2318TLU
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ROHM Semiconductor
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 - - - - - - - - 3 A 560 @ 500mA, 4V - - - 50MHz - - Surface Mount 150°C (TJ) 15 W - - CPT3 - NPN 1V @ 50mA, 2A 60 V
D45D3
D45D3
Harris Semiconductor
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 - - - - - - - - 6 A 2000 @ 1A, 2V - - - - - - Through Hole -55°C ~ 150°C (TJ) 2.1 W - - TO-220 - PNP - Darlington 1.5V @ 3mA, 3A 60 V
D45D4
D45D4
Harris Semiconductor
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 - - - - - - - - 6 A 2000 @ 1A, 2V - - - - - - Through Hole -55°C ~ 150°C (TJ) 2.1 W - - TO-220 - PNP - Darlington 2V @ 5mA, 5A 60 V
2SC2910S-AE
2SC2910S-AE
On Semiconductor
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TIP35A
TIP35A
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On Semiconductor
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 - - - - - - - - 25 A 10 @ 15A, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 125 W - - TO-218 - NPN - 60 V
TIP35B
TIP35B
On Semiconductor
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 - - - - - - - - 25 A 10 @ 15A, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 125 W - - TO-218 - NPN - 80 V
UPA2001GR-E2-A
UPA2001GR-E2-A
Renesas
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TIP35A
TIP35A
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Motorola Semicondutor
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 - - - - - - - - 25 A 10 @ 15A, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 125 W - - TO-218 - NPN - 60 V
AA1L4M-T-A
AA1L4M-T-A
Renesas
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TIP29C
TIP29C
NTE Electronics
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 - - - - - - - - 1 A 15 @ 1A, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - NPN 700mV @ 125mA, 1A 100 V
TIP30C
TIP30C
NTE Electronics
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 - - - - - - - - 1 A 15 @ 1A, 4V - - - - - - Through Hole 150°C (TJ) 2 W - - TO-220 - PNP 700mV @ 125mA, 1A 100 V
2N6487
2N6487
Harris Semiconductor
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 - - - - - - - - 15 A 20 @ 5A, 4V - - - 5MHz - - Through Hole -65°C ~ 150°C (TJ) 1.8 W - - TO-220AB - NPN 3.5V @ 5A, 15A 60 V
TIP48
TIP48
NTE Electronics
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 - - - - - - - - 1 A 30 @ 300mA, 10V - - - 10MHz - - Through Hole -65°C ~ 150°C (TJ) 40 W - - TO-220 - NPN 1V @ 200mA, 1A 300 V
UPA2003C-A
UPA2003C-A
Renesas
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MPQ6842
MPQ6842
On Semiconductor
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D44E1
D44E1
Harris Semiconductor
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 - - - - - - - - 10 A 1000 @ 5A, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1.67 W - - TO-220 - NPN - Darlington 2V @ 20mA, 10A 40 V
FGP3040G2
FGP3040G2
On Semiconductor
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CA3127ER2489
CA3127ER2489
Harris Semiconductor
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2SC4224M-E-SY
2SC4224M-E-SY
Sanyo Denki
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NTE2684
NTE2684
NTE Electronics
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 - - - - - - - - 5 A 45 @ 500mA, 10V - - - 100MHz - - Through Hole 150°C (TJ) 15 W - - TO-126 - NPN 1.2V @ 700mA, 7A 120 V
Showing 15101-15150 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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