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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
BC549A A1G
BC549A A1G
Taiwan Semiconductor
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BC549B A1G
BC549B A1G
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BC549C A1G
BC549C A1G
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 30 V
BC550A A1G
BC550A A1G
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 45 V
BC550B A1G
BC550B A1G
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 45 V
BC550C A1G
BC550C A1G
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 45 V
KTC3198-BL A1G
KTC3198-BL A1G
Taiwan Semiconductor
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 - - - - - - - - 150 mA 70 @ 2mA, 6V - - - 80MHz - - Through Hole -55°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN 250mV @ 10mA, 100mA 50 V
KTC3198-GR A1G
KTC3198-GR A1G
Taiwan Semiconductor
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 - - - - - - - - 150 mA 70 @ 2mA, 6V - - - 80MHz - - Through Hole -55°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN 250mV @ 10mA, 100mA 50 V
KTC3198-O A1G
KTC3198-O A1G
Taiwan Semiconductor
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 - - - - - - - - 150 mA 70 @ 2mA, 6V - - - 80MHz - - Through Hole -55°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN 250mV @ 10mA, 100mA 50 V
KTC3198-Y A1G
KTC3198-Y A1G
Taiwan Semiconductor
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 - - - - - - - - 150 mA 70 @ 2mA, 6V - - - 80MHz - - Through Hole -55°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN 250mV @ 10mA, 100mA 50 V
TS13002ACT A3G
TS13002ACT A3G
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 - - - - - - - - 300 mA 25 @ 100mA, 10V - - - 4MHz - - Through Hole 150°C (TJ) 600 mW - - TO-92 - NPN 1.5V @ 20mA, 200mA 400 V
TSA894CT A3G
TSA894CT A3G
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 - - - - - - - - 150 mA 150 @ 1mA, 10V - - - 50MHz - - Through Hole 150°C (TJ) 1 W - - TO-92 - PNP 500mV @ 10mA, 50mA 500 V
TSC966CT A3G
TSC966CT A3G
Taiwan Semiconductor
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 - - - - - - - - 300 mA 100 @ 1mA, 5V - - - 50MHz - - Through Hole 150°C (TJ) 1 W - - TO-92 - NPN 1V @ 5mA, 50mA 400 V
TSC5302DCHC5G
TSC5302DCHC5G
Taiwan Semiconductor
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 - - - - - - - - 2 A 10 @ 400mA, 5V - - - - - - Through Hole 150°C (TJ) 25 W - - TO-251 (IPAK) - NPN 1.5V @ 250mA, 1A 400 V
TSC5303DCHC5G
TSC5303DCHC5G
Taiwan Semiconductor
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 - - - - - - - - 3 A 15 @ 1A, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 30 W - - TO-251 (IPAK) - NPN 700mV @ 100mA, 400mA 400 V
TSC5304EDCHC5G
TSC5304EDCHC5G
Taiwan Semiconductor
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 - - - - - - - - 4 A 17 @ 1A, 5V - - - - - - Through Hole 150°C (TJ) 35 W - - TO-251 (IPAK) - NPN 1.5V @ 500mA, 2.5A 400 V
TSC5802DCHC5G
TSC5802DCHC5G
Taiwan Semiconductor
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 - - - - - - - - 2.5 A 50 @ 100mA, 5V - - - - - - Through Hole 150°C (TJ) 30 W - - TO-251 (IPAK) - NPN 3V @ 600mA, 2A 450 V
TSC5804DCHC5G
TSC5804DCHC5G
Taiwan Semiconductor
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 - - - - - - - - 5 A 25 @ 200mA, 3V - - - - - - Through Hole 150°C (TJ) 45 W - - TO-251 (IPAK) - NPN 2V @ 1A, 3.5A 450 V
TSC741CZ C0G
TSC741CZ C0G
Taiwan Semiconductor
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 - - - - - - - - 2.5 A 50 @ 100mA, 5V - - - - - - Through Hole 150°C (TJ) 60 W - - TO-220 - NPN 2V @ 600mA, 2A 450 V
TSC742CZ C0G
TSC742CZ C0G
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 - - - - - - - - 5 A 48 @ 100mA, 5V - - - - - - Through Hole 150°C (TJ) 70 W - - TO-220 - NPN 1.5V @ 1A, 3.5A 420 V
BC337-16 B1G
BC337-16 B1G
Taiwan Semiconductor
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 - - - - - - - - 800 mA 100 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 45 V
BC337-25 B1G
BC337-25 B1G
Taiwan Semiconductor
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 - - - - - - - - 800 mA 160 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 45 V
BC337-40 B1G
BC337-40 B1G
Taiwan Semiconductor
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 - - - - - - - - 800 mA 250 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 45 V
BC338-16 B1G
BC338-16 B1G
Taiwan Semiconductor
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 - - - - - - - - 800 mA 100 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 25 V
BC338-25 B1G
BC338-25 B1G
Taiwan Semiconductor
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 - - - - - - - - 800 mA 160 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 25 V
BC338-40 B1G
BC338-40 B1G
Taiwan Semiconductor
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 - - - - - - - - 800 mA 250 @ 100mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 25 V
BC546A B1G
BC546A B1G
Taiwan Semiconductor
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 65 V
BC546B B1G
BC546B B1G
Taiwan Semiconductor
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 65 V
BC546C B1G
BC546C B1G
Taiwan Semiconductor
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 65 V
BC547A B1G
BC547A B1G
Taiwan Semiconductor
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 45 V
BC547B B1G
BC547B B1G
Taiwan Semiconductor
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 45 V
BC547C B1G
BC547C B1G
Taiwan Semiconductor
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 45 V
BC548A B1G
BC548A B1G
Taiwan Semiconductor
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 30 V
BC548B B1G
BC548B B1G
Taiwan Semiconductor
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 30 V
BC548C B1G
BC548C B1G
Taiwan Semiconductor
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 30 V
BC549A B1G
BC549A B1G
Taiwan Semiconductor
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 30 V
BC549B B1G
BC549B B1G
Taiwan Semiconductor
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 30 V
BC549C B1G
BC549C B1G
Taiwan Semiconductor
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 30 V
BC550A B1G
BC550A B1G
Taiwan Semiconductor
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 500 mW - - TO-92 - NPN - 45 V
MPSA06RLRA
MPSA06RLRA
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PN2222ARLRA
PN2222ARLRA
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PN2907ARLRA
PN2907ARLRA
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 1.6V @ 50mA, 500mA 60 V
MPS2907ARLRA
MPS2907ARLRA
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MPSA56RLRA
MPSA56RLRA
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MPSA13RLRA
MPSA13RLRA
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - 125MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
MPSA14RLRA
MPSA14RLRA
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 125MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
MPSA18RLRA
MPSA18RLRA
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 - - - - - - - - 200 mA 500 @ 10mA, 5V - - - 160MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 300mV @ 5mA, 50mA 45 V
2N5401RLRA
2N5401RLRA
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 - - - - - - - - 600 mA 60 @ 10mA, 5V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 500mV @ 5mA, 50mA 150 V
MPS4124RLRA
MPS4124RLRA
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MPS4126RLRA
MPS4126RLRA
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 - - - - - - - - 200 mA 120 @ 2mA, 1V - - - 170MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 400mV @ 5mA, 50mA 25 V
Showing 15001-15050 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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