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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2N5172_D74Z
2N5172_D74Z
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 500 mA 100 @ 10mA, 10V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 250mV @ 1mA, 10mA 25 V
2N5210_J05Z
2N5210_J05Z
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 100 mA 200 @ 100µA, 5V 30MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 700mV @ 1mA, 10mA 50 V
2N5306
2N5306
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 1.2 A 7000 @ 2mA, 5V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN - Darlington 1.4V @ 200µA, 200mA 25 V
2N5307
2N5307
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 1.2 A 2000 @ 2mA, 5V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN - Darlington 1.4V @ 200µA, 200mA 40 V
2N5308_D26Z
2N5308_D26Z
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 1.2 A 7000 @ 2mA, 5V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN - Darlington 1.4V @ 200µA, 200mA 40 V
2N5308_D74Z
2N5308_D74Z
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 1.2 A 7000 @ 2mA, 5V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN - Darlington 1.4V @ 200µA, 200mA 40 V
2N5308_D75Z
2N5308_D75Z
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 1.2 A 7000 @ 2mA, 5V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN - Darlington 1.4V @ 200µA, 200mA 40 V
2N5366_D26Z
2N5366_D26Z
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 500 mA 100 @ 50mA, 1V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 1V @ 30mA, 300mA 40 V
2N5400_D75Z
2N5400_D75Z
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 600 mA 40 @ 10mA, 5V 400MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 500mV @ 5mA, 50mA 120 V
2N5401TAR
2N5401TAR
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 600 mA 60 @ 10mA, 5V 400MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 500mV @ 5mA, 50mA 150 V
2N5551TAR
2N5551TAR
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 600 mA 80 @ 10mA, 5V 100MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 200mV @ 5mA, 50mA 160 V
2SC1213AKC
2SC1213AKC
Renesas
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BC184_D27Z
BC184_D27Z
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 100 mA 130 @ 100mA, 5V 150MHz Through Hole -55°C ~ 150°C (TJ) 350 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC212_D26Z
BC212_D26Z
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 300 mA 60 @ 2mA, 5V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 600mV @ 5mA, 100mA 50 V
BC212L
BC212L
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 300 mA 60 @ 2mA, 5V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 600mV @ 5mA, 100mA 50 V
BC212LB_D74Z
BC212LB_D74Z
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 100 mA 60 @ 2mA, 5V - Through Hole -55°C ~ 150°C (TJ) 350 mW TO-92-3 PNP 600mV @ 5mA, 100mA 50 V
BC213L
BC213L
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 500 mA 80 @ 2mA, 5V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 600mV @ 5mA, 100mA 30 V
BC237BBU
BC237BBU
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 100 mA 180 @ 2mA, 5V 250MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 45 V
BC237BTF
BC237BTF
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 100 mA 180 @ 2mA, 5V 250MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 45 V
BC238BBU
BC238BBU
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 100 mA 180 @ 2mA, 5V 250MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 25 V
BC238BTA
BC238BTA
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 100 mA 180 @ 2mA, 5V 250MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 25 V
NMBT3904235
NMBT3904235
NXP Semiconductors
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BC546BTFR
BC546BTFR
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 100 mA 200 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 65 V
BC547A
BC547A
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 100 mA 110 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 45 V
BC547ATAR
BC547ATAR
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 100 mA 110 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 45 V
BC547B_L34Z
BC547B_L34Z
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 100 mA 200 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 45 V
BC547B_S00Z
BC547B_S00Z
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 100 mA 110 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 50 V
BC547BTAR
BC547BTAR
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 100 mA 200 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 45 V
BC547BTFR
BC547BTFR
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 100 mA 200 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 45 V
BC547CTAR
BC547CTAR
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 100 mA 420 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 45 V
BC548ATFR
BC548ATFR
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 100 mA 110 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC548BTAR
BC548BTAR
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 100 mA 200 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
NMBT3906215
NMBT3906215
NXP Semiconductors
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BC557B_J18Z
BC557B_J18Z
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 100 mA 200 @ 2mA, 5V 150MHz Through Hole 150°C (TJ) 500 mW TO-92-3 PNP 650mV @ 5mA, 100mA 45 V
BC558BTAR
BC558BTAR
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 100 mA 200 @ 2mA, 5V 150MHz Through Hole 150°C (TJ) 500 mW TO-92-3 PNP 650mV @ 5mA, 100mA 30 V
BC558BTFR
BC558BTFR
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 100 mA 200 @ 2mA, 5V 150MHz Through Hole 150°C (TJ) 500 mW TO-92-3 PNP 650mV @ 5mA, 100mA 30 V
BC559BTAR
BC559BTAR
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 100 mA 200 @ 2mA, 5V 150MHz Through Hole 150°C (TJ) 500 mW TO-92-3 PNP 650mV @ 5mA, 100mA 30 V
BC560CTAR
BC560CTAR
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 100 mA 420 @ 2mA, 5V 150MHz Through Hole 150°C (TJ) 500 mW TO-92-3 PNP 650mV @ 5mA, 100mA 45 V
BC635_D75Z
BC635_D75Z
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 1 A 40 @ 150mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 NPN 500mV @ 50mA, 500mA 45 V
BC635_L34Z
BC635_L34Z
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 1 A 40 @ 150mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 NPN 500mV @ 50mA, 500mA 45 V
BC636TAR
BC636TAR
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 1 A 40 @ 150mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 500mV @ 50mA, 500mA 45 V
BC638TFR
BC638TFR
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 1 A 40 @ 150mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 500mV @ 50mA, 500mA 60 V
BC639_L34Z
BC639_L34Z
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 1 A 40 @ 150mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 NPN 500mV @ 50mA, 500mA 80 V
BC63916
BC63916
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 1 A 100 @ 150mA, 2V 100MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-92-3 NPN 500mV @ 50mA, 500mA 80 V
BDW93A
BDW93A
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 12 A 750 @ 5A, 3V - Through Hole 150°C (TJ) 80 W TO-220-3 NPN - Darlington 3V @ 100mA, 10A 60 V
BU407
BU407
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 7 A - 10MHz Through Hole 150°C (TJ) 60 W TO-220-3 NPN 1V @ 500mA, 5A 150 V
BU407TU
BU407TU
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 7 A - 10MHz Through Hole 150°C (TJ) 60 W TO-220-3 NPN 1V @ 500mA, 5A 150 V
2N5551_J05Z
2N5551_J05Z
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 600 mA 80 @ 10mA, 5V 100MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 200mV @ 5mA, 50mA 160 V
2N7053_D26Z
2N7053_D26Z
On Semiconductor
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 1.5 A 1000 @ 1A, 5V 200MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-226-3 NPN - Darlington 1.5V @ 100µA, 100mA 100 V
2N7053_D75Z
2N7053_D75Z
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 1.5 A 1000 @ 1A, 5V 200MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-226-3 NPN - Darlington 1.5V @ 100µA, 100mA 100 V
Showing 14901-14950 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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