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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2SC4453-3-TB-E
2SC4453-3-TB-E
On Semiconductor
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30A01C-TB-E
30A01C-TB-E
Sanyo Denki
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2SC3392-5-TB-E
2SC3392-5-TB-E
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BC846A
BC846A
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 100MHz - - Surface Mount -65°C ~ 150°C (TJ) 200 mW - - SOT-23 - NPN 500mV @ 5mA, 100mA 65 V
2SC2274KE-AA
2SC2274KE-AA
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BC859B
BC859B
On Semiconductor
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 250 mW - - SOT-23-3 (TO-236) - PNP 650mV @ 5mA, 100mA 30 V
2SB926T-AA
2SB926T-AA
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2SC3400
2SC3400
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2SC3142-4-TB-E
2SC3142-4-TB-E
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2SC3576
2SC3576
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2SA1832-GR,LXHF
2SA1832-GR,LXHF
Toshiba
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 - - - - - - - - 150 mA 200 @ 2mA, 6V - - - 80MHz - - Surface Mount - 120 mW - - SSM - PNP 300mV @ 10mA, 100mA 50 V
2SA1162-O,LXHF
2SA1162-O,LXHF
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Toshiba
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 - - - - - - - - 150 mA 70 @ 2mA, 6V - - - 80MHz - - Surface Mount 125°C (TJ) 200 mW - - S-Mini - PNP 300mV @ 10mA, 100mA 50 V
PBSS4350TVL
PBSS4350TVL
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Nexperia USA Inc.
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 - - - - - - - - 2 A 300 @ 1A, 2V - - - 100MHz - - Surface Mount 150°C (TJ) - - - TO-236AB - NPN 370mV @ 300mA, 3A 50 V
CMPT2907AE TR PBFREE
CMPT2907AE TR PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount -65°C ~ 150°C (TJ) 350 mW - - SOT-23 - PNP 700mV @ 50mA, 500mA 60 V
2SA1576AT106S
2SA1576AT106S
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ROHM Semiconductor
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 - - - - - - - - 150 mA 120 @ 1mA, 6V - - - 140MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - PNP 500mV @ 5mA, 50mA 50 V
PBSS5240TVL
PBSS5240TVL
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Nexperia USA Inc.
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 - - - - - - - - 2 A 300 @ 100mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) - - - TO-236AB - PNP 350mV @ 200mA, 2A 40 V
2SA812A-T1B-AT
2SA812A-T1B-AT
Renesas
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2SC4217D
2SC4217D
On Semiconductor
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2SD1851-TB-E
2SD1851-TB-E
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2SB926S-AA
2SB926S-AA
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BCP51-16TF
BCP51-16TF
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Nexperia USA Inc.
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 140MHz - - Surface Mount 150°C (TJ) 1.3 W - - SOT-223 - PNP 500mV @ 50mA, 500mA 45 V
2SB1395T-AA
2SB1395T-AA
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2SC4548E-TD-E
2SC4548E-TD-E
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2SC3731-T-A
2SC3731-T-A
NEC
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2SD1648-TB-E
2SD1648-TB-E
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2SC4446-6-TL-E
2SC4446-6-TL-E
On Semiconductor
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2SC4406-4-TL-E
2SC4406-4-TL-E
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2SC3917
2SC3917
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PN200A-FS
PN200A-FS
On Semiconductor
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 - - - - - - - - 500 mA 300 @ 10mA, 1V - - - 250MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 400mV @ 20mA, 200mA 45 V
2SD655ETZ-E
2SD655ETZ-E
Renesas
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2SC2274KF-AA
2SC2274KF-AA
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2SC3916
2SC3916
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BC51-16PA,115
BC51-16PA,115
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Nexperia USA Inc.
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 145MHz - - Surface Mount 150°C (TJ) 420 mW - - 3-HUSON (2x2) - PNP 500mV @ 50mA, 500mA 45 V
BCX54-16TF
BCX54-16TF
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Nexperia USA Inc.
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - - - - Surface Mount 150°C (TJ) 500 mW - - SOT-89 - NPN 500mV @ 50mA, 500mA 45 V
2SD1782HE3-R-TP
2SD1782HE3-R-TP
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Micro Commercial
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 - - - - - - - - 500 mA 180 @ 100mA, 3V - - - 180MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-23 - NPN 500mV @ 50mA, 500mA 80 V
2SC5659T2LP
2SC5659T2LP
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ROHM Semiconductor
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 - - - - - - - - 50 mA 82 @ 1mA, 6V - - - 300MHz - - Surface Mount 150°C (TJ) 150 mW - - VMT3 - NPN 300mV @ 1mA, 10mA 25 V
BCX53-TP
BCX53-TP
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Micro Commercial
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 50MHz - - Surface Mount -55°C ~ 150°C (TJ) 500 mW - - SOT-89 - PNP 500mV @ 50mA, 500mA 80 V
2SB1234-TB-E
2SB1234-TB-E
On Semiconductor
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MCH3322-TL-E
MCH3322-TL-E
On Semiconductor
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2SC4570-T1-A
2SC4570-T1-A
Renesas
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2SC4452-3-TL-E-ON
2SC4452-3-TL-E-ON
On Semiconductor
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2SD1622T-TD-E
2SD1622T-TD-E
On Semiconductor
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2SA1122CCTL-E
2SA1122CCTL-E
Renesas
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2SC4412-5-TB-E
2SC4412-5-TB-E
On Semiconductor
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2SC2463DETL-E
2SC2463DETL-E
Renesas
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2SA1122CCTR-E
2SA1122CCTR-E
Renesas
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MPSW3725
MPSW3725
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On Semiconductor
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 - - - - - - - - 1.2 A 60 @ 100mA, 1V - - - 250MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226-3 - NPN 950mV @ 100mA, 1A 40 V
PN4248
PN4248
NTE Electronics
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 - - - - - - - - 10nA (ICBO) 50 @ 10mA, 5V - - - - - - Through Hole 150°C (TJ) 625 mW - - TO-92 - PNP 250mV @ 500µA, 10mA 40 V
PBHV8110DW-AU_R2_000A1
PBHV8110DW-AU_R2_000A1
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PANJIT
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 - - - - - - - - 1 A 140 @ 150mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 2.6 W - - SOT-223 - NPN 450mV @ 100mA, 1A 100 V
PBHV9110DW-AU_R2_000A1
PBHV9110DW-AU_R2_000A1
Download Datasheet for PBHV9110DW-AU_R2_000A1
PANJIT
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 - - - - - - - - 1 A 140 @ 150mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 2.6 W - - SOT-223 - PNP 600mV @ 100mA, 1A 100 V
Showing 14901-14950 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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