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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
BC807-40_R1_00001
BC807-40_R1_00001
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PANJIT
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BC848C_R1_00001
BC848C_R1_00001
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PANJIT
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - - - - Surface Mount -55°C ~ 150°C (TJ) 330 mW - - SOT-23 - NPN 600mV @ 5mA, 100mA 30 V
MMBTA56_R1_00001
MMBTA56_R1_00001
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PANJIT
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23 - PNP 250mV @ 10mA, 100mA 80 V
BC856BW-AU_R1_000A1
BC856BW-AU_R1_000A1
PANJIT
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 250 mW - - SOT-323 - PNP 650mV @ 5mA, 100mA 65 V
BC856BW_R1_00001
BC856BW_R1_00001
PANJIT
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BC857CW_R1_00001
BC857CW_R1_00001
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2SB888-AA
2SB888-AA
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2SA1832-Y,LF
2SA1832-Y,LF
Toshiba
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 - - - - - - - - 150 mA 120 @ 2mA, 6V - - - 80MHz - - Surface Mount 125°C (TJ) 100 mW - - SSM - PNP 300mV @ 10mA, 100mA 50 V
MMST2222AHE3-TP
MMST2222AHE3-TP
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Micro Commercial
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-323 - NPN 1V @ 50mA, 500mA 40 V
BC856AQBZ
BC856AQBZ
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 125 @ 2mA, 5V - - - 100MHz - - Surface Mount, Wettable Flank 150°C (TJ) 340 mW - - DFN1110D-3 - PNP 650mV @ 5mA, 100mA 65 V
BC817-16HE3-TP
BC817-16HE3-TP
Micro Commercial
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23 - NPN 700mV @ 50mA, 500mA 45 V
BC847BQ-7-F
BC847BQ-7-F
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Diodes Incorporated
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 300MHz - - Surface Mount -65°C ~ 150°C (TJ) 310 mW - - SOT-23-3 - NPN 600mV @ 5mA, 100mA 45 V
BC850CW-AU_R1_000A1
BC850CW-AU_R1_000A1
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - - - - Surface Mount -55°C ~ 150°C (TJ) 250 mW - - SOT-323 - NPN 600mV @ 5mA, 100mA 45 V
BC857BW-AU_R1_000A1
BC857BW-AU_R1_000A1
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PANJIT
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 250 mW - - SOT-323 - PNP 650mV @ 5mA, 100mA 45 V
BC807-16-AU_R1_000A1
BC807-16-AU_R1_000A1
PANJIT
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 330 mW - - SOT-23 - PNP 700mV @ 50mA, 500mA 45 V
BC546
BC546
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On Semiconductor
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 65 V
BC857AQCZ
BC857AQCZ
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 125 @ 2mA, 5V - - - 100MHz - - Surface Mount, Wettable Flank 150°C (TJ) 360 mW - - DFN1412D-3 - PNP 850mV @ 5mA, 100mA 45 V
PN100
PN100
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On Semiconductor
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 - - - - - - - - 500 mA 100 @ 150mA, 5V - - - 250MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 400mV @ 20mA, 200mA 45 V
BC557CTA
BC557CTA
On Semiconductor
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 - - - - - - - - 15nA (ICBO) 420 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA -
2SC4146-TB-E
2SC4146-TB-E
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BCW68G
BCW68G
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On Semiconductor
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 - - - - - - - - 800 mA 160 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3 - PNP 1.5V @ 30mA, 300mA 45 V
2SC4694-TL-E
2SC4694-TL-E
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2SC4399-4-TL-E
2SC4399-4-TL-E
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BCX17
BCX17
On Semiconductor
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - - - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23-3 - PNP 620mV @ 50mA, 500mA 45 V
2SC3330T-AC
2SC3330T-AC
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MPS6521
MPS6521
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On Semiconductor
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 - - - - - - - - 100 mA 300 @ 2mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 500mV @ 5mA, 50mA 25 V
2SA1462-T1B-A
2SA1462-T1B-A
Renesas
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NTE2682
NTE2682
NTE Electronics
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 - - - - - - - - 8 A 3500 @ 7A, 5V - - - 20MHz - - Through Hole 150°C (TJ) 3.5 W - - TO-3PL - NPN - Darlington 3V @ 7mA, 7A 160 V
NTE2683
NTE2683
NTE Electronics
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 - - - - - - - - 8 A 3500 @ 7A, 5V - - - 20MHz - - Through Hole 150°C (TJ) 3.5 W - - TO-3PL - PNP - Darlington 3V @ 7mA, 7A 160 V
NTE332MCP
NTE332MCP
NTE Electronics
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 - - - - - - - - 15 A 40 @ 500mA, 4V - - - 3MHz - - Through Hole 150°C (TJ) 90 W - - TO-220 - PNP 3V @ 2.5A, 10A 100 V
2N2824
2N2824
Vishay Dale
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 - - - - - - - - 30 A 10 @ 20A, 3V - - - 20MHz - - Stud Mount - 118 W - - TO-63 - - 600mV @ 1A, 10A 100 V
MPS6521D26Z
MPS6521D26Z
On Semiconductor
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 - - - - - - - - 100 mA 300 @ 2mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 500mV @ 5mA, 50mA 25 V
BC307B
BC307B
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On Semiconductor
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 280MHz - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92 (TO-226) - PNP 250mV @ 5mA, 100mA 45 V
MPS8098
MPS8098
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On Semiconductor
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 - - - - - - - - 500 mA 100 @ 1mA, 5V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 400mV @ 5mA, 100mA 60 V
BC32825
BC32825
On Semiconductor
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 - - - - - - - - 800 mA 160 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - PNP 700mV @ 50mA, 500mA 25 V
BC556
BC556
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On Semiconductor
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 65 V
PN3642
PN3642
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On Semiconductor
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 - - - - - - - - 500 mA 40 @ 150mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 220mV @ 15mA, 150mA 45 V
BC848AHE3-TP
BC848AHE3-TP
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Micro Commercial
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23 - NPN 500mV @ 5mA, 100mA 30 V
BC857CQC-QZ
BC857CQC-QZ
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 100MHz - - Surface Mount, Wettable Flank 150°C (TJ) 360 mW - - DFN1412D-3 - PNP 650mV @ 5mA, 100mA 45 V
BC856BQC-QZ
BC856BQC-QZ
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 100MHz - - Surface Mount, Wettable Flank 150°C (TJ) 360 mW - - DFN1412D-3 - PNP 650mV @ 5mA, 100mA 65 V
BC857AQC-QZ
BC857AQC-QZ
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 125 @ 2mA, 5V - - - 100MHz - - Surface Mount, Wettable Flank 150°C (TJ) 360 mW - - DFN1412D-3 - PNP 650mV @ 5mA, 100mA 45 V
BC857BQC-QZ
BC857BQC-QZ
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 100MHz - - Surface Mount, Wettable Flank 150°C (TJ) 360 mW - - DFN1412D-3 - PNP 650mV @ 5mA, 100mA 45 V
MMBT3904FN3_R1_00001
MMBT3904FN3_R1_00001
Download Datasheet for MMBT3904FN3_R1_00001
PANJIT
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - - - - Surface Mount -55°C ~ 150°C (TJ) 250 mW - - 3-DFN (1x0.6) - NPN 300mV @ 5mA, 50mA 40 V
BC807-40QB-QZ
BC807-40QB-QZ
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 250 @ 100mA, 1V - - - 80MHz - - Surface Mount, Wettable Flank 150°C (TJ) 350 mW - - DFN1110D-3 - PNP 700mV @ 50mA, 500mA 45 V
BC807-16QB-QZ
BC807-16QB-QZ
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 80MHz - - Surface Mount, Wettable Flank 150°C (TJ) 350 mW - - DFN1110D-3 - PNP 700mV @ 50mA, 500mA 45 V
BC807-25QB-QZ
BC807-25QB-QZ
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 80MHz - - Surface Mount, Wettable Flank 150°C (TJ) 350 mW - - DFN1110D-3 - PNP 700mV @ 50mA, 500mA 45 V
MMBT3904T RSG
MMBT3904T RSG
Taiwan Semiconductor
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SOT-523 - NPN 300mV @ 5mA, 50mA 40 V
MMBT3906T RSG
MMBT3906T RSG
Taiwan Semiconductor
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SOT-523 - PNP 400mV @ 5mA, 50mA 40 V
BC857AHE3-TP
BC857AHE3-TP
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Micro Commercial
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 - - - - - - - - 100 mA 125 @ 2mA, 5V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 310 mW - - SOT-23 - PNP 650mV @ 5mA, 100mA 45 V
BC848AWHE3-TP
BC848AWHE3-TP
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Micro Commercial
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 150MHz - - Surface Mount -65°C ~ 150°C (TJ) 200 mW - - SOT-323 - NPN 500mV @ 5mA, 100mA 30 V
Showing 14851-14900 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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