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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
MPSA56ZL1G
MPSA56ZL1G
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 250mV @ 10mA, 100mA 80 V
MPSA63G
MPSA63G
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - 125MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP - Darlington 1.5V @ 100µA, 100mA 30 V
MPSA63RLRMG
MPSA63RLRMG
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - 125MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP - Darlington 1.5V @ 100µA, 100mA 30 V
MPSA63RLRPG
MPSA63RLRPG
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - 125MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP - Darlington 1.5V @ 100µA, 100mA 30 V
MPSA63ZL1
MPSA63ZL1
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - 125MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP - Darlington 1.5V @ 100µA, 100mA 30 V
MPSA63ZL1G
MPSA63ZL1G
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - 125MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP - Darlington 1.5V @ 100µA, 100mA 30 V
MPSA64RLRA
MPSA64RLRA
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 125MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP - Darlington 1.5V @ 100µA, 100mA 30 V
BDX33B
BDX33B
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 - - - - - - - - 10 A 750 @ 3A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 70 W - - TO-220 - NPN - Darlington 2.5V @ 6mA, 3A 80 V
MPSA64RLRAG
MPSA64RLRAG
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 125MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP - Darlington 1.5V @ 100µA, 100mA 30 V
MPSA64RLRM
MPSA64RLRM
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 125MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP - Darlington 1.5V @ 100µA, 100mA 30 V
MPSA64RLRMG
MPSA64RLRMG
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 125MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP - Darlington 1.5V @ 100µA, 100mA 30 V
MPSA70RLRM
MPSA70RLRM
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 - - - - - - - - 100 mA 40 @ 5mA, 10V - - - 125MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 250mV @ 1mA, 10mA 40 V
MPSA70RLRMG
MPSA70RLRMG
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 - - - - - - - - 100 mA 40 @ 5mA, 10V - - - 125MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 250mV @ 1mA, 10mA 40 V
MPSA75RLRAG
MPSA75RLRAG
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP - Darlington 1.5V @ 100µA, 100mA 40 V
MPSA75RLRP
MPSA75RLRP
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP - Darlington 1.5V @ 100µA, 100mA 40 V
MPSA75RLRPG
MPSA75RLRPG
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP - Darlington 1.5V @ 100µA, 100mA 40 V
MPSA77RLRA
MPSA77RLRA
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP - Darlington 1.5V @ 100µA, 100mA 60 V
BUT12AI,127
BUT12AI,127
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NXP Semiconductors
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 - - - - - - - - 8 A 14 @ 1A, 5V - - - - - - Through Hole 150°C (TJ) 110 W - - TO-220AB - NPN 1.5V @ 860mA, 5A 450 V
MPSA77RLRAG
MPSA77RLRAG
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP - Darlington 1.5V @ 100µA, 100mA 60 V
MPSA92RL1
MPSA92RL1
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 - - - - - - - - 500 mA 25 @ 30mA, 10V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 500mV @ 2mA, 20mA 300 V
MPSA92RLRP
MPSA92RLRP
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 - - - - - - - - 500 mA 25 @ 30mA, 10V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 500mV @ 2mA, 20mA 300 V
MPSA92ZL1
MPSA92ZL1
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 - - - - - - - - 500 mA 25 @ 30mA, 10V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 500mV @ 2mA, 20mA 300 V
MPSA93RLRM
MPSA93RLRM
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 - - - - - - - - 500 mA 25 @ 30mA, 10V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 400mV @ 2mA, 20mA 200 V
MPSA93RLRMG
MPSA93RLRMG
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 - - - - - - - - 500 mA 25 @ 30mA, 10V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 400mV @ 2mA, 20mA 200 V
MPSW01ARLRA
MPSW01ARLRA
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 - - - - - - - - 1 A 60 @ 100mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - NPN 500mV @ 100mA, 1A 40 V
MPSW01ARLRAG
MPSW01ARLRAG
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 - - - - - - - - 1 A 60 @ 100mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - NPN 500mV @ 100mA, 1A 40 V
MPSW06G
MPSW06G
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 - - - - - - - - 500 mA 60 @ 250mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - NPN 400mV @ 10mA, 250mA 80 V
MPSW13RLRA
MPSW13RLRA
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 - - - - - - - - 1 A 10000 @ 100mA, 5V - - - 125MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
MPSW13RLRAG
MPSW13RLRAG
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 - - - - - - - - 1 A 10000 @ 100mA, 5V - - - 125MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
MPSW42
MPSW42
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 - - - - - - - - 500 mA 40 @ 30mA, 10V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - NPN 500mV @ 2mA, 20mA 300 V
MPSW45AZL1
MPSW45AZL1
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 - - - - - - - - 1 A 25000 @ 200mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - NPN - Darlington 1.5V @ 2mA, 1A 50 V
MPSW45RLRE
MPSW45RLRE
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 - - - - - - - - 1 A 25000 @ 200mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - NPN - Darlington 1.5V @ 2mA, 1A 40 V
2PC4081R/ZLX
2PC4081R/ZLX
NXP Semiconductors
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 - - - - - - - - - - - - - - - - - - - - - - - - - -
MPSW45RLREG
MPSW45RLREG
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 - - - - - - - - 1 A 25000 @ 200mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - NPN - Darlington 1.5V @ 2mA, 1A 40 V
MPSW51
MPSW51
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 - - - - - - - - 1 A 160 @ 100mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - PNP 700mV @ 100mA, 1A 30 V
MPSW51ARLRA
MPSW51ARLRA
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 - - - - - - - - 1 A 60 @ 100mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - PNP 700mV @ 100mA, 1A 40 V
MPSW51ARLRAG
MPSW51ARLRAG
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 - - - - - - - - 1 A 60 @ 100mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - PNP 700mV @ 100mA, 1A 40 V
MPSW51ARLRP
MPSW51ARLRP
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 - - - - - - - - 1 A 60 @ 100mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - PNP 700mV @ 100mA, 1A 40 V
MPSW51ARLRPG
MPSW51ARLRPG
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 - - - - - - - - 1 A 60 @ 100mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - PNP 700mV @ 100mA, 1A 40 V
MPSW51G
MPSW51G
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 - - - - - - - - 1 A 60 @ 100mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - PNP 700mV @ 100mA, 1A 30 V
MPSW55
MPSW55
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 - - - - - - - - 500 mA 50 @ 250mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - PNP 500mV @ 10mA, 250mA 60 V
MPSW55G
MPSW55G
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 - - - - - - - - 500 mA 50 @ 250mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - PNP 500mV @ 10mA, 250mA 60 V
MPSW55RLRA
MPSW55RLRA
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 - - - - - - - - 500 mA 50 @ 250mA, 1V - - - 50MHz - - Through Hole - 1 W - - TO-92 (TO-226) - PNP 500mV @ 10mA, 250mA 60 V
MPSW55RLRAG
MPSW55RLRAG
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 - - - - - - - - 500 mA 50 @ 250mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - PNP 500mV @ 10mA, 250mA 60 V
MPSW56RLRA
MPSW56RLRA
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 - - - - - - - - 500 mA 50 @ 250mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - PNP 500mV @ 10mA, 250mA 80 V
MPSW56RLRP
MPSW56RLRP
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 - - - - - - - - 500 mA 50 @ 250mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - PNP 500mV @ 10mA, 250mA 80 V
MPSW63RLRA
MPSW63RLRA
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - 125MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - PNP - Darlington 1.5V @ 100µA, 100mA 30 V
MPSW63RLRAG
MPSW63RLRAG
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - 125MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - PNP - Darlington 1.5V @ 100µA, 100mA 30 V
MPSW92RLRA
MPSW92RLRA
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 - - - - - - - - 500 mA 25 @ 30mA, 10V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - PNP 500mV @ 2mA, 20mA 300 V
MSA1162YT1
MSA1162YT1
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 - - - - - - - - 100 mA 120 @ 2mA, 6V - - - 80MHz - - Surface Mount 150°C (TJ) 200 mW - - SC-59 - PNP 500mV @ 10mA, 100mA 50 V
Showing 15201-15250 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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