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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2SD667L-D-AP
2SD667L-D-AP
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 - - - - - - - - 1 A 160 @ 150mA, 5V - - - 140MHz - - Through Hole -55°C ~ 150°C (TJ) 900 mW - - TO-92L - NPN 1V @ 50mA, 500mA 80 V
2SC2383-Y-BP
2SC2383-Y-BP
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 - - - - - - - - 1 A 160 @ 200mA, 5V - - - 20MHz - - Through Hole -55°C ~ 150°C (TJ) 900 mW - - TO-92MOD - NPN 1V @ 50mA, 500mA 160 V
S9012-H-AP
S9012-H-AP
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 - - - - - - - - 500 mA 144 @ 1mA, 4V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - PNP 600mV @ 50mA, 500mA 25 V
S8050-D-BP
S8050-D-BP
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 - - - - - - - - 500 mA 160 @ 50mA, 1V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 600mV @ 50mA, 500mA 25 V
MPSA93-BP
MPSA93-BP
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 - - - - - - - - 500 mA 40 @ 10mA, 10V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - PNP 500mV @ 2mA, 20mA 200 V
BC639-16-AP
BC639-16-AP
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 - NPN 500mV @ 50mA, 500mA 80 V
MPSA94-BP
MPSA94-BP
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 - - - - - - - - 200 mA 80 @ 10mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - PNP 300mV @ 5mA, 50mA 400 V
2SA1013-O-AP
2SA1013-O-AP
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 - - - - - - - - 1 A 120 @ 200mA, 5V - - - 15MHz - - Through Hole -55°C ~ 150°C (TJ) 900 mW - - TO-92MOD - PNP 1.5V @ 50mA, 500mA 160 V
FGH4L50T65SQD
FGH4L50T65SQD
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MPSW01A-AP
MPSW01A-AP
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 - - - - - - - - 1 A 60 @ 100mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 500mV @ 100mA, 1A 40 V
S8550-D-BP
S8550-D-BP
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 - - - - - - - - 500 mA 160 @ 50mA, 1V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - PNP 600mV @ 50mA, 500mA 25 V
BC636-10-AP
BC636-10-AP
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 100MHz - - Through Hole -65°C ~ 150°C (TJ) 830 mW - - TO-92 - PNP 500mV @ 50mA, 500mA 45 V
KSD471A-G-BP
KSD471A-G-BP
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 - - - - - - - - 1 A 200 @ 100mA, 1V - - - 130MHz - - Through Hole 150°C (TJ) 800 mW - - TO-92 - NPN 500mV @ 100mA, 1A 30 V
2N4124-AP
2N4124-AP
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 - - - - - - - - 200 mA 120 @ 2mA, 1V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 300mV @ 5mA, 50mA 25 V
2N5551-BP
2N5551-BP
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 - - - - - - - - 600 mA 80 @ 10mA, 5V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 500mV @ 5mA, 50mA 160 V
8550SS-D-BP
8550SS-D-BP
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 - - - - - - - - 1.5 A 160 @ 100mA, 1V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 - PNP 500mV @ 80mA, 800mA 25 V
KTA1267-GR-BP
KTA1267-GR-BP
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 - - - - - - - - 150 mA 200 @ 2mA, 6V - - - 80MHz - - Through Hole -55°C ~ 150°C (TJ) 400 mW - - TO-92S - PNP 300mV @ 10mA, 100mA 50 V
KSD471A-G-AP
KSD471A-G-AP
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 - - - - - - - - 1 A 200 @ 100mA, 1V - - - 130MHz - - Through Hole 150°C (TJ) 800 mW - - TO-92 - NPN 500mV @ 100mA, 1A 30 V
MPS2222A-BP
MPS2222A-BP
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 600 mW - - TO-92 - NPN 1V @ 50mA, 500mA 40 V
MPSA55-AP
MPSA55-AP
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - PNP 250mV @ 10mA, 100mA 80 V
M8050-C-BP
M8050-C-BP
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 - - - - - - - - 800 mA 120 @ 100mA, 1V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 500mV @ 80mA, 800mA 25 V
2SA1585S-Q-BP
2SA1585S-Q-BP
Download Datasheet for 2SA1585S-Q-BP
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 - - - - - - - - 2 A 120 @ 100mA, 2V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 400 mW - - TO-92S - PNP 820mV @ 100mA, 2A 20 V
SS8550-D-AP
SS8550-D-AP
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 - - - - - - - - 1.5 A 160 @ 100mA, 1V - - - 190MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 - PNP 800mV @ 80mA, 800mA 25 V
MPSA93-AP
MPSA93-AP
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 - - - - - - - - 500 mA 40 @ 10mA, 10V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - PNP 500mV @ 2mA, 20mA 200 V
MPSA14-BP
MPSA14-BP
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 125MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
BC636-16-BP
BC636-16-BP
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Through Hole -65°C ~ 150°C (TJ) 830 mW - - TO-92 - PNP 500mV @ 50mA, 500mA 45 V
MPS651-BP
MPS651-BP
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 - - - - - - - - 2 A 75 @ 1A, 2V - - - 75MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 500mV @ 200mA, 2A 60 V
2SA1585S-R-AP
2SA1585S-R-AP
Download Datasheet for 2SA1585S-R-AP
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 - - - - - - - - 2 A 180 @ 100mA, 2V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 400 mW - - TO-92S - PNP 820mV @ 100mA, 2A 20 V
MPSA55-BP
MPSA55-BP
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - PNP 250mV @ 10mA, 100mA 80 V
MPSA14-AP
MPSA14-AP
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 125MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
SS8050-D-AP
SS8050-D-AP
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 - - - - - - - - 1.5 A 160 @ 100mA, 1V - - - 190MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 - NPN 500mV @ 80mA, 800mA 25 V
BF421-BP
BF421-BP
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 - - - - - - - - 100 mA 50 @ 25mA, 20V - - - 60MHz - - Through Hole -55°C ~ 150°C (TJ) 830 mW - - TO-92 - PNP 600mV @ 5mA, 30mA 300 V
BC369-AP
BC369-AP
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 - - - - - - - - 1 A 85 @ 500mA, 1V - - - 65MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - PNP 500mV @ 100mA, 1A 20 V
BC639-10-BP
BC639-10-BP
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 - NPN 500mV @ 50mA, 500mA 80 V
2SD667L-D-BP
2SD667L-D-BP
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 - - - - - - - - 1 A 160 @ 150mA, 5V - - - 140MHz - - Through Hole -55°C ~ 150°C (TJ) 900 mW - - TO-92L - NPN 1V @ 50mA, 500mA 80 V
2SA1013-Y-BP
2SA1013-Y-BP
Micro Commercial
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 - - - - - - - - 1 A 200 @ 200mA, 5V - - - 15MHz - - Through Hole -55°C ~ 150°C (TJ) 900 mW - - TO-92MOD - PNP 1.5V @ 50mA, 500mA 160 V
KSD471A-O-AP
KSD471A-O-AP
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 - - - - - - - - 1 A 70 @ 100mA, 1V - - - 130MHz - - Through Hole 150°C (TJ) 800 mW - - TO-92 - NPN 500mV @ 100mA, 1A 30 V
MPSW51-AP
MPSW51-AP
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 - - - - - - - - 1 A 60 @ 100mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - PNP 700mV @ 100mA, 1A 30 V
BC548C-AP
BC548C-AP
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 300mV @ 5mA, 100mA 30 V
MJD41CTFCTF
MJD41CTFCTF
On Semiconductor
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BF420-BP
BF420-BP
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 - - - - - - - - 100 mA 50 @ 25mA, 20V - - - 60MHz - - Through Hole -55°C ~ 150°C (TJ) 830 mW - - TO-92 - NPN 600mV @ 5mA, 30mA 300 V
2N6718-BP
2N6718-BP
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 - - - - - - - - 1 A 80 @ 50mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 500mV @ 10mA, 250mA 100 V
BF421-AP
BF421-AP
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 - - - - - - - - 100 mA 50 @ 25mA, 20V - - - 60MHz - - Through Hole -55°C ~ 150°C (TJ) 830 mW - - TO-92 - PNP 600mV @ 5mA, 30mA 300 V
BC639-16-BP
BC639-16-BP
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 - NPN 500mV @ 50mA, 500mA 80 V
8550SS-D-AP
8550SS-D-AP
Download Datasheet for 8550SS-D-AP
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 - - - - - - - - 1.5 A 160 @ 100mA, 1V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 - PNP 500mV @ 80mA, 800mA 25 V
S9014-C-BP
S9014-C-BP
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 - - - - - - - - 100 mA 200 @ 1mA, 5V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 400 mW - - TO-92 - NPN 300mV @ 5mA, 100mA 45 V
2SA950-Y-BP
2SA950-Y-BP
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 - - - - - - - - 800 mA 160 @ 100mA, 1V - - - 120MHz - - Through Hole 150°C (TJ) 600 mW - - TO-92 - PNP 700mV @ 20mA, 500mA 30 V
MPSA13-BP
MPSA13-BP
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - 125MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
2SC1815-BL-AP
2SC1815-BL-AP
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 - - - - - - - - 150 mA 350 @ 2mA, 6V - - - 80MHz - - Through Hole -55°C ~ 125°C (TJ) 400 mW - - TO-92 - NPN 250mV @ 10mA, 100mA 50 V
2N5401-BP
2N5401-BP
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 - - - - - - - - 600 mA 60 @ 10mA, 5V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - PNP 500mV @ 5mA, 50mA 150 V
Showing 15401-15450 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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