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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
MPSA06RLRMG
MPSA06RLRMG
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On Semiconductor
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 250mV @ 10mA, 100mA 80 V
MPSA14RLRAG
MPSA14RLRAG
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 125MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
MPSA56RLRMG
MPSA56RLRMG
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 250mV @ 10mA, 100mA 80 V
MPSA63RLRAG
MPSA63RLRAG
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - 125MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP - Darlington 1.5V @ 100µA, 100mA 30 V
MPSW45ARLRAG
MPSW45ARLRAG
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 - - - - - - - - 1 A 25000 @ 200mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - NPN - Darlington 1.5V @ 2mA, 1A 50 V
MPSW92RLRAG
MPSW92RLRAG
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 - - - - - - - - 500 mA 25 @ 30mA, 10V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - PNP 500mV @ 2mA, 20mA 300 V
2SA1242-Y(Q)
2SA1242-Y(Q)
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Toshiba
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 - - - - - - - - 5 A 160 @ 500mA, 2V - - - 170MHz - - Surface Mount 150°C (TJ) 1 W - - PW-MOLD - PNP 1V @ 100mA, 4A 20 V
2SA1244-Y(Q)
2SA1244-Y(Q)
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 - - - - - - - - 5 A 120 @ 1A, 1V - - - 60MHz - - Surface Mount 150°C (TJ) 1 W - - PW-MOLD - PNP 400mV @ 150mA, 3A 50 V
2SA1887(F)
2SA1887(F)
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Toshiba
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 - - - - - - - - 10 A 120 @ 1A, 1V - - - 45MHz - - Through Hole 150°C (TJ) 2 W - - TO-220NIS - PNP 400mV @ 250mA, 5A 50 V
2SA1930(Q,M)
2SA1930(Q,M)
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Toshiba
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 - - - - - - - - 2 A 100 @ 100mA, 5V - - - 200MHz - - Through Hole 150°C (TJ) 2 W - - TO-220NIS - PNP 1V @ 100mA, 1A 180 V
BDP949E6327HTSA1
BDP949E6327HTSA1
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Infineon Technologies
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 - - - - - - - - 3 A 100 @ 500mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 5 W - - PG-SOT223-4-10 - NPN 500mV @ 200mA, 2A 60 V
2SB1218GQL
2SB1218GQL
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Panasonic Electronic Components
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 - - - - - - - - 100 mA 160 @ 2mA, 10V - - - 80MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-F2 - PNP 500mV @ 10mA, 100mA 45 V
2SA1806GRL
2SA1806GRL
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Panasonic Electronic Components
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 - - - - - - - - 50 mA 90 @ 10mA, 1V - - - 1.5GHz - - Surface Mount 125°C (TJ) 125 mW - - SSMini3-F3 - PNP 200mV @ 1mA, 10mA 15 V
2SA1890GRL
2SA1890GRL
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Panasonic Electronic Components
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 - - - - - - - - 1 A 120 @ 100mA, 2V - - - 120MHz - - Surface Mount 150°C (TJ) 1 W - - MiniP3-F2 - PNP 300mV @ 50mA, 500mA 80 V
2SA2028G0L
2SA2028G0L
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Panasonic Electronic Components
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 - - - - - - - - 1 A 160 @ 100mA, 2V - - - 170MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-F2 - PNP 100mV @ 10mA, 200mA 20 V
2SA2078G0L
2SA2078G0L
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 - - - - - - - - 100 mA 180 @ 2mA, 10V - - - 80MHz - - Surface Mount 125°C (TJ) 100 mW - - SSSMini3-F2 - PNP 500mV @ 10mA, 100mA 50 V
2SA2162G0L
2SA2162G0L
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 - - - - - - - - 500 mA 270 @ 10mA, 2V - - - 200MHz - - Surface Mount 125°C (TJ) 100 mW - - SSSMini3-F2 - PNP 250mV @ 10mA, 200mA 12 V
2SB0789GRL
2SB0789GRL
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Panasonic Electronic Components
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 - - - - - - - - 500 mA 130 @ 150mA, 10V - - - 120MHz - - Surface Mount 150°C (TJ) 1 W - - MiniP3-F2 - PNP 600mV @ 50mA, 500mA 120 V
2SB0956GRL
2SB0956GRL
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Panasonic Electronic Components
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 - - - - - - - - 1 A 130 @ 500mA, 2V - - - 200MHz - - Surface Mount 150°C (TJ) 1 W - - MiniP3-F2 - PNP 500mV @ 50mA, 1A 20 V
2SB1218G0L
2SB1218G0L
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 - - - - - - - - 100 mA 160 @ 2mA, 10V - - - 80MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-F2 - PNP 500mV @ 10mA, 100mA 45 V
2SD0875GSL
2SD0875GSL
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Panasonic Electronic Components
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 - - - - - - - - 500 mA 185 @ 150mA, 10V - - - 120MHz - - Surface Mount 150°C (TJ) 1 W - - MiniP3-F2 - NPN 400mV @ 30mA, 300mA 80 V
2SD1119GRL
2SD1119GRL
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Panasonic Electronic Components
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 - - - - - - - - 3 A 230 @ 500mA, 2V - - - 150MHz - - Surface Mount 150°C (TJ) 1 W - - MiniP3-F2 - NPN 1V @ 100mA, 3A 25 V
2SD1819G0L
2SD1819G0L
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Panasonic Electronic Components
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 - - - - - - - - 100 mA 160 @ 2mA, 10V - - - 150MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-F2 - NPN 300mV @ 10mA, 100mA 50 V
2SD1819GQL
2SD1819GQL
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 - - - - - - - - 100 mA 160 @ 2mA, 10V - - - 150MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-F2 - NPN 300mV @ 10mA, 100mA 50 V
2SD1820G0L
2SD1820G0L
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Panasonic Electronic Components
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 - - - - - - - - 500 mA 85 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-F2 - NPN 600mV @ 30mA, 300mA 50 V
2SD1820GRL
2SD1820GRL
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Panasonic Electronic Components
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 - - - - - - - - 500 mA 120 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-F2 - NPN 600mV @ 30mA, 300mA 50 V
2SD1823GRL
2SD1823GRL
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Panasonic Electronic Components
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 - - - - - - - - 50 mA 400 @ 2mA, 10V - - - 120MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-F2 - NPN 200mV @ 1mA, 10mA 40 V
2SD1824GRL
2SD1824GRL
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Panasonic Electronic Components
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 - - - - - - - - 20 mA 400 @ 2mA, 10V - - - 90MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-F2 - NPN 200mV @ 1mA, 10mA 100 V
2SD1824GSL
2SD1824GSL
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Panasonic Electronic Components
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 - - - - - - - - 20 mA 600 @ 2mA, 10V - - - 90MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-F2 - NPN 200mV @ 1mA, 10mA 100 V
2SD1979GSL
2SD1979GSL
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Panasonic Electronic Components
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 - - - - - - - - 300 mA 500 @ 4mA, 2V - - - 80MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-F2 - NPN 100mV @ 3mA, 30mA 20 V
2STN2540-A
2STN2540-A
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STMicroelectronics
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 - - - - - - - - 5 A 150 @ 2A, 2V - - - - - - Surface Mount 150°C (TJ) 1.6 W - - SOT-223 - PNP 450mV @ 500mA, 5A 40 V
ST26025A
ST26025A
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STMicroelectronics
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 - - - - - - - - 20 A 750 @ 10A, 3V - - - - - - Chassis Mount 200°C (TJ) 160 W - - TO-3 - PNP - Darlington 3V @ 200mA, 20A 100 V
ST5027
ST5027
STMicroelectronics
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 - - - - - - - - 3 A - - - - - - - Through Hole - 90 W - - TO-220 - NPN - 800 V
NSS20200W6T1G
NSS20200W6T1G
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 - - - - - - - - 2 A 200 @ 1A, 2V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 555 mW - - SC-88/SC70-6/SOT-363 - PNP 215mV @ 20mA, 2A 20 V
2ST2121
2ST2121
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STMicroelectronics
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 - - - - - - - - 17 A 80 @ 1A, 5V - - - 25MHz - - Through Hole 200°C (TJ) 250 W - - TO-3 - PNP 3V @ 800mA, 8A 250 V
STE07DE220
STE07DE220
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STMicroelectronics
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 - - - - - - - - 7 A - - - - - - - Chassis Mount 125°C (TJ) 220 W - - ISOTOP® - NPN - Emitter Switched Bipolar - 2200 V
STX13003G
STX13003G
STMicroelectronics
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 - - - - - - - - 1 A 8 @ 500mA, 2V - - - - - - Through Hole 150°C (TJ) 1.5 W - - TO-92-3 - NPN 1.5V @ 500mA, 1.5A 400 V
STX13005G
STX13005G
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STMicroelectronics
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 - - - - - - - - 3 A 8 @ 2A, 5V - - - - - - Through Hole 150°C (TJ) 2.8 W - - TO-92-3 - NPN 5V @ 750mA, 3A 400 V
PN4121_D74Z
PN4121_D74Z
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On Semiconductor
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 - - - - - - - - 100 mA 60 @ 1mA, 1V - - - - - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - PNP 300mV @ 5mA, 50mA 40 V
2SA1225-Y(Q)
2SA1225-Y(Q)
Toshiba
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 - - - - - - - - 1.5 A 120 @ 100mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 1 W - - PW-MOLD - PNP 1.5V @ 50mA, 500mA 160 V
2SC2705-Y(TE6,F,M)
2SC2705-Y(TE6,F,M)
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 - - - - - - - - 50 mA 120 @ 10mA, 5V - - - 200MHz - - Through Hole 150°C (TJ) 800 mW - - TO-92MOD - NPN 1V @ 1mA, 10mA 150 V
2SD1221-Y(Q)
2SD1221-Y(Q)
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Toshiba
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 - - - - - - - - 3 A 100 @ 500mA, 5V - - - 3MHz - - Surface Mount 150°C (TJ) 1 W - - PW-MOLD - NPN 1V @ 300mA, 3A 60 V
STBV32G
STBV32G
STMicroelectronics
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 - - - - - - - - 1.5 A 5 @ 1A, 2V - - - - - - Through Hole 150°C (TJ) 1.5 W - - TO-92-3 - NPN 1.5V @ 500mA, 1.5A 400 V
STBV42G
STBV42G
STMicroelectronics
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 - - - - - - - - 1 A 10 @ 400mA, 5V - - - - - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - NPN 1.5V @ 250mA, 750mA 400 V
STX13004G
STX13004G
STMicroelectronics
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 - - - - - - - - 2 A 10 @ 1A, 5V - - - - - - Through Hole 150°C (TJ) 2.5 W - - TO-92 - NPN 1V @ 500mA, 2A 400 V
BC817K25WE6327HTSA1
BC817K25WE6327HTSA1
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Infineon Technologies
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 170MHz - - Surface Mount 150°C (TJ) 250 mW - - PG-SOT323 - NPN 700mV @ 50mA, 500mA 45 V
BC 817K-25W E6433
BC 817K-25W E6433
Download Datasheet for BC 817K-25W E6433
Infineon Technologies
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 170MHz - - Surface Mount 150°C (TJ) 250 mW - - PG-SOT323 - NPN 700mV @ 50mA, 500mA 45 V
BC817K40WE6327HTSA1
BC817K40WE6327HTSA1
Download Datasheet for BC817K40WE6327HTSA1
Infineon Technologies
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 - - - - - - - - 500 mA 250 @ 100mA, 1V - - - 170MHz - - Surface Mount 150°C (TJ) 250 mW - - PG-SOT323 - NPN 700mV @ 50mA, 500mA 45 V
BC 818K-25 E6327
BC 818K-25 E6327
Download Datasheet for BC 818K-25 E6327
Infineon Technologies
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 170MHz - - Surface Mount 150°C (TJ) 500 mW - - PG-SOT23 - NPN 700mV @ 50mA, 500mA 25 V
BCX71JLT1G
BCX71JLT1G
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 - - - - - - - - 100 mA 250 @ 2mA, 5V - - - - - - Surface Mount - 350 mW - - SOT-23-3 (TO-236) - PNP 550mV @ 1.25mA, 50mA 45 V
Showing 15501-15550 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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