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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
KSD1616AYBU
KSD1616AYBU
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 1 A 135 @ 100mA, 2V 160MHz Through Hole 150°C (TJ) 750 mW TO-92-3 NPN 300mV @ 50mA, 1A 60 V
KSA733YIUTA
KSA733YIUTA
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 150 mA 120 @ 1mA, 6V 180MHz Through Hole 150°C (TJ) 250 mW TO-92-3 PNP 300mV @ 10mA, 100mA 50 V
MMBT4355
MMBT4355
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 800 mA 100 @ 10mA, 10V - Surface Mount -55°C ~ 150°C (TJ) 350 mW SOT-23-3 PNP 1V @ 100mA, 1A 60 V
TIS97
TIS97
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 500 mA 250 @ 100µA, 5V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN - 40 V
PN930
PN930
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 100 mA 10 @ 10µA, 5V - Through Hole - 625 mW TO-92-3 NPN 1V @ 500µA, 10mA 45 V
MPS3702
MPS3702
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 800 mA 60 @ 50mA, 5V 100MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 250mV @ 5mA, 50mA 25 V
KSA1370EBU
KSA1370EBU
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 100 mA 100 @ 10mA, 10V 150MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 600mV @ 2mA, 20mA 200 V
KSA1370FTA
KSA1370FTA
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 100 mA 100 @ 10mA, 10V 150MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 600mV @ 2mA, 20mA 200 V
KSA1370ETA
KSA1370ETA
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 100 mA 100 @ 10mA, 10V 150MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 600mV @ 2mA, 20mA 200 V
KSA1370FBU
KSA1370FBU
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 100 mA 100 @ 10mA, 10V 150MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 600mV @ 2mA, 20mA 200 V
TIS93
TIS93
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 800 mA 100 @ 50mA, 2V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 250mV @ 5mA, 50mA 40 V
KSC2310RTA
KSC2310RTA
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 50 mA 40 @ 10mA, 5V 100MHz Through Hole 150°C (TJ) 800 mW TO-92-3 NPN 500mV @ 1mA, 10mA 150 V
KSC2331OTA
KSC2331OTA
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 700 mA 70 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 1 W TO-92-3 NPN 700mV @ 50mA, 500mA 60 V
KSC2331OBU
KSC2331OBU
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 700 mA 70 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 1 W TO-92-3 NPN 700mV @ 50mA, 500mA 60 V
KSC2310OBU
KSC2310OBU
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 50 mA 70 @ 10mA, 5V 100MHz Through Hole 150°C (TJ) 800 mW TO-92-3 NPN 500mV @ 1mA, 10mA 150 V
KSC2310RBU
KSC2310RBU
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 50 mA 40 @ 10mA, 5V 100MHz Through Hole 150°C (TJ) 800 mW TO-92-3 NPN 500mV @ 1mA, 10mA 150 V
KSC2310YNBU
KSC2310YNBU
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 50 mA 120 @ 10mA, 5V 100MHz Through Hole 150°C (TJ) 800 mW TO-92-3 NPN 500mV @ 1mA, 10mA 150 V
2N2107
2N2107
Microchip Technology
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 500 mA - - Through Hole - 1 W TO-5AA PNP - 60 V
KSC2310OTA
KSC2310OTA
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 50 mA 70 @ 10mA, 5V 100MHz Through Hole 150°C (TJ) 800 mW TO-92-3 NPN 500mV @ 1mA, 10mA 150 V
KSA1378GBU
KSA1378GBU
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 300 mA 200 @ 50mA, 1V - Through Hole 150°C (TJ) 300 mW TO-92S PNP 600mV @ 30mA, 300mA 25 V
KSA931OTA
KSA931OTA
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 700 mA 70 @ 50mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 700mV @ 50mA, 500mA 60 V
KSA910OBU
KSA910OBU
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 50 mA 70 @ 10mA, 5V 100MHz Through Hole - 800 mW TO-92-3 PNP 800mV @ 1mA, 10mA 150 V
KSA931OBU
KSA931OBU
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 700 mA 70 @ 50mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 700mV @ 50mA, 500mA 60 V
KSA931YBU
KSA931YBU
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 700 mA 120 @ 50mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 700mV @ 50mA, 500mA 60 V
KSA910YTA
KSA910YTA
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 50 mA 120 @ 10mA, 5V 100MHz Through Hole - 800 mW TO-92-3 PNP 800mV @ 1mA, 10mA 150 V
KSC2330ABU
KSC2330ABU
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 100 mA 40 @ 20mA, 10V 50MHz Through Hole 150°C (TJ) 1 W TO-92-3 NPN 500mV @ 1mA, 10mA 400 V
KSA910YBU
KSA910YBU
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 50 mA 120 @ 10mA, 5V 100MHz Through Hole - 800 mW TO-92-3 PNP 800mV @ 1mA, 10mA 150 V
KSC2330RBU
KSC2330RBU
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 100 mA 40 @ 20mA, 10V 50MHz Through Hole 150°C (TJ) 1 W TO-92-3 NPN 500mV @ 1mA, 10mA 300 V
KSC2330ASHBU
KSC2330ASHBU
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 100 mA 40 @ 20mA, 10V 50MHz Through Hole 150°C (TJ) 1 W TO-92-3 NPN 500mV @ 1mA, 10mA 400 V
FJN5471PWD
FJN5471PWD
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 5 A 700 @ 500mA, 2V 150MHz Through Hole 150°C (TJ) 750 mW TO-92-3 NPN 500mV @ 100mA, 3A 20 V
2N2201
2N2201
Microchip Technology
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KSA1281OTA
KSA1281OTA
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 2 A 70 @ 500mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 500mV @ 50mA, 1A 50 V
KSA1281YBU
KSA1281YBU
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 2 A 120 @ 500mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 500mV @ 50mA, 1A 50 V
KSA1281OBU
KSA1281OBU
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 2 A 70 @ 500mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 500mV @ 50mA, 1A 50 V
MPSA92RA
MPSA92RA
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 500 mA 25 @ 30mA, 10V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 500mV @ 2mA, 20mA 300 V
FJZ945LTF
FJZ945LTF
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 150 mA 350 @ 1mA, 6V 300MHz Surface Mount 150°C (TJ) 100 mW SOT-623F NPN 300mV @ 10mA, 100mA 50 V
FJZ733GTF
FJZ733GTF
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 150 mA 200 @ 1mA, 6V 180MHz Surface Mount 150°C (TJ) 100 mW SOT-623F PNP 300mV @ 10mA, 100mA 50 V
FJZ733YTF
FJZ733YTF
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 150 mA 120 @ 1mA, 6V 180MHz Surface Mount 150°C (TJ) 100 mW SOT-623F PNP 300mV @ 10mA, 100mA 50 V
KSA928AOBU
KSA928AOBU
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 2 A 100 @ 500mA, 2V 120MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 2V @ 30mA, 1.5A 30 V
FJZ733RTF
FJZ733RTF
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 150 mA 40 @ 1mA, 6V 180MHz Surface Mount 150°C (TJ) 100 mW SOT-623F PNP 300mV @ 10mA, 100mA 50 V
FJZ733LTF
FJZ733LTF
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 150 mA 350 @ 1mA, 6V 180MHz Surface Mount 150°C (TJ) 100 mW SOT-623F PNP 300mV @ 10mA, 100mA 50 V
FJZ945OTF
FJZ945OTF
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 150 mA 70 @ 1mA, 6V 300MHz Surface Mount 150°C (TJ) 100 mW SOT-623F NPN 300mV @ 10mA, 100mA 50 V
FJZ945YTF
FJZ945YTF
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 150 mA 120 @ 1mA, 6V 300MHz Surface Mount 150°C (TJ) 100 mW SOT-623F NPN 300mV @ 10mA, 100mA 50 V
FJZ733OTF
FJZ733OTF
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 150 mA 70 @ 1mA, 6V 180MHz Surface Mount 150°C (TJ) 100 mW SOT-623F PNP 300mV @ 10mA, 100mA 50 V
FJZ945GTF
FJZ945GTF
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 150 mA 200 @ 1mA, 6V 300MHz Surface Mount 150°C (TJ) 100 mW SOT-623F NPN 300mV @ 10mA, 100mA 50 V
KSC2500CTA
KSC2500CTA
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 2 A 300 @ 500mA, 1V 150MHz Through Hole 150°C (TJ) 900 mW TO-92-3 NPN 500mV @ 50mA, 2A 10 V
KSC2500BTA
KSC2500BTA
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 2 A 200 @ 500mA, 1V 150MHz Through Hole 150°C (TJ) 900 mW TO-92-3 NPN 500mV @ 50mA, 2A 10 V
KSC2500DTA
KSC2500DTA
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 2 A 420 @ 500mA, 1V 150MHz Through Hole 150°C (TJ) 900 mW TO-92-3 NPN 500mV @ 50mA, 2A 10 V
KSC2500BBU
KSC2500BBU
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 2 A 200 @ 500mA, 1V 150MHz Through Hole 150°C (TJ) 900 mW TO-92-3 NPN 500mV @ 50mA, 2A 10 V
KSC2500DBU
KSC2500DBU
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 2 A 420 @ 500mA, 1V 150MHz Through Hole 150°C (TJ) 900 mW TO-92-3 NPN 500mV @ 50mA, 2A 10 V
Showing 13151-13200 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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