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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
PBSS5350D,115
PBSS5350D,115
Download Datasheet for PBSS5350D,115
Nexperia USA Inc.
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 - - - - - - - - 3 A 100 @ 2A, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 750 mW - - 6-TSOP - PNP 300mV @ 200mA, 2A 50 V
PBSS5350D,135
PBSS5350D,135
Download Datasheet for PBSS5350D,135
Nexperia USA Inc.
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 - - - - - - - - 3 A 100 @ 2A, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 750 mW - - 6-TSOP - PNP 300mV @ 200mA, 2A 50 V
SMUN2113T1
SMUN2113T1
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BC817-40WT1G
BC817-40WT1G
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On Semiconductor
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 - - - - - - - - 500 mA 250 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 460 mW - - SC-70-3 (SOT323) - NPN 700mV @ 50mA, 500mA 45 V
BC860C,235
BC860C,235
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - PNP 650mV @ 5mA, 100mA 45 V
BC807-25W,115
BC807-25W,115
Download Datasheet for BC807-25W,115
Nexperia USA Inc.
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 80MHz - - Surface Mount 150°C (TJ) 200 mW - - SOT-323 - PNP 700mV @ 50mA, 500mA 45 V
BCP56F
BCP56F
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Nexperia USA Inc.
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 155MHz - - Surface Mount 150°C (TJ) 600 mW - - SOT-223 - NPN 500mV @ 50mA, 500mA 80 V
2SC2881-Y(TE12L,ZC
2SC2881-Y(TE12L,ZC
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Toshiba
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 - - - - - - - - 800 mA 120 @ 100mA, 5V - - - 120MHz - - Surface Mount 150°C (TJ) 500 mW - - PW-MINI - NPN 1V @ 50mA, 500mA 120 V
2SAR553PFRAT100
2SAR553PFRAT100
ROHM Semiconductor
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 - - - - - - - - 2 A 180 @ 50mA, 2V - - - 320MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - PNP 400mV @ 35mA, 700mA 50 V
PHPT61002NYCX
PHPT61002NYCX
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Nexperia USA Inc.
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 - - - - - - - - 2 A 100 @ 500mA, 1.5V - - - 140MHz - - Surface Mount 175°C (TJ) 1.25 W - - LFPAK56, Power-SO8 - NPN 75mV @ 50mA, 500mA 100 V
BCP51-16-TP
BCP51-16-TP
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Micro Commercial
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-223 - PNP 500mV @ 50mA, 500mA 45 V
2SD2656FRAT106
2SD2656FRAT106
Download Datasheet for 2SD2656FRAT106
ROHM Semiconductor
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 - - - - - - - - 1 A 270 @ 100mA, 2V - - - 400MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - NPN 350mV @ 25mA, 500mA 30 V
BC807W,135
BC807W,135
Download Datasheet for BC807W,135
Nexperia USA Inc.
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 80MHz - - Surface Mount 150°C (TJ) 200 mW - - SOT-323 - PNP 700mV @ 50mA, 500mA 45 V
BC816-16WX
BC816-16WX
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 200 mW - - SOT-323 - NPN 400mV @ 50mA, 500mA 80 V
BC847AWT1G
BC847AWT1G
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On Semiconductor
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SC-70-3 (SOT323) - NPN 600mV @ 5mA, 100mA 45 V
MMBT3906 RFG
MMBT3906 RFG
Taiwan Semiconductor
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23 - PNP 400mV @ 5mA, 50mA 40 V
BC816-25HVL
BC816-25HVL
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 100MHz - - Surface Mount 175°C (TJ) 300 mW - - TO-236AB - NPN 400mV @ 50mA, 500mA 80 V
MMBT3904 RFG
MMBT3904 RFG
Taiwan Semiconductor
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23 - NPN 300mV @ 5mA, 50mA 40 V
SST2907AHZGT116
SST2907AHZGT116
ROHM Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - SST3 - PNP 1.6V @ 50mA, 500mA 60 V
PBSS4260QAZ
PBSS4260QAZ
Download Datasheet for PBSS4260QAZ
Nexperia USA Inc.
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 - - - - - - - - 2 A 40 @ 2A, 2V - - - 180MHz - - Surface Mount 150°C (TJ) 325 mW - - DFN1010D-3 - NPN 190mV @ 50mA, 1A 60 V
2SAR514PFRAT100
2SAR514PFRAT100
ROHM Semiconductor
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 - - - - - - - - 700 mA 120 @ 100mA, 3V - - - 380MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - PNP 400mV @ 15mA, 300mA 80 V
UMT4401U3T106
UMT4401U3T106
ROHM Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 1V - - - 250MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - NPN 750mV @ 50mA, 500mA 40 V
SST2222AHZGT116
SST2222AHZGT116
ROHM Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Surface Mount 150°C (TJ) 200 mW - - SST3 - NPN 1V @ 50mA, 500mA 40 V
BC817-16-7-F
BC817-16-7-F
Download Datasheet for BC817-16-7-F
Diodes Incorporated
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -65°C ~ 150°C (TJ) 310 mW - - SOT-23-3 - NPN 700mV @ 50mA, 500mA 45 V
MMBT3904WT1H
MMBT3904WT1H
On Semiconductor
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2SA1201-Y(TE12L,ZC
2SA1201-Y(TE12L,ZC
Download Datasheet for 2SA1201-Y(TE12L,ZC
Toshiba
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 - - - - - - - - 800 mA 80 @ 100mA, 5V - - - 120MHz - - Surface Mount 150°C (TJ) 500 mW - - PW-MINI - PNP 1V @ 50mA, 500mA 120 V
2SB1710TL
2SB1710TL
ROHM Semiconductor
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 - - - - - - - - 1 A 270 @ 100mA, 2V - - - 320MHz - - Surface Mount 150°C (TJ) 500 mW - - TSMT3 - PNP 350mV @ 25mA, 500mA 30 V
PHPT61003PYX
PHPT61003PYX
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Nexperia USA Inc.
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 - - - - - - - - 3 A 150 @ 500mA, 10V - - - 125MHz - - Surface Mount 175°C (TJ) 1.25 W - - LFPAK56, Power-SO8 - PNP 360mV @ 200mA, 2A 100 V
2SCR552PFRAT100
2SCR552PFRAT100
ROHM Semiconductor
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 - - - - - - - - 3 A 200 @ 500mA, 2V - - - 280MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - NPN 400mV @ 50mA, 1A 30 V
PXTA14,115
PXTA14,115
Download Datasheet for PXTA14,115
Nexperia USA Inc.
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 125MHz - - Surface Mount 150°C (TJ) 1.3 W - - SOT-89 - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
2SCR514PT100
2SCR514PT100
ROHM Semiconductor
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 - - - - - - - - 700 mA 120 @ 100mA, 3V - - - 320MHz - - Surface Mount 150°C (TJ) 2 W - - MPT3 - NPN 300mV @ 15mA, 300mA 80 V
DZT955-13
DZT955-13
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Diodes Incorporated
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 - - - - - - - - 4 A 100 @ 1A, 5V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-223-3 - PNP 370mV @ 300mA, 3A 140 V
BC807-40Q-7-F
BC807-40Q-7-F
Download Datasheet for BC807-40Q-7-F
Diodes Incorporated
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 - - - - - - - - 500 mA 250 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 310 mW - - SOT-23-3 - PNP 700mV @ 50mA, 500mA 45 V
2SD2444KT146R
2SD2444KT146R
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ROHM Semiconductor
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 - - - - - - - - 1 A 180 @ 50mA, 2V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - SMT3 - NPN 300mV @ 20mA, 400mA 15 V
2SAR552PFRAT100
2SAR552PFRAT100
ROHM Semiconductor
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 - - - - - - - - 3 A 200 @ 500mA, 2V - - - 330MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - PNP 400mV @ 50mA, 1A 30 V
2SAR542F3TR
2SAR542F3TR
ROHM Semiconductor
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 - - - - - - - - 3 A 200 @ 500mA, 2V - - - 240MHz - - Surface Mount 150°C (TJ) 2.1 W - - HUML2020L3 - PNP 200mV @ 50mA, 1A 30 V
BULT106D
BULT106D
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STMicroelectronics
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 - - - - - - - - 2 A 10 @ 1A, 5V - - - - - - Through Hole 150°C (TJ) 32 W - - SOT-32-3 - NPN 1.2V @ 400mA, 2A 230 V
2SCR513PT100
2SCR513PT100
ROHM Semiconductor
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 - - - - - - - - 1 A 180 @ 50mA, 2V - - - 360MHz - - Surface Mount 150°C (TJ) 2 W - - MPT3 - NPN 350mV @ 25mA, 500mA 50 V
BC817-16Q-7-F
BC817-16Q-7-F
Download Datasheet for BC817-16Q-7-F
Diodes Incorporated
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -65°C ~ 150°C (TJ) 310 mW - - SOT-23-3 - NPN 700mV @ 50mA, 500mA 45 V
BCX70J,235
BCX70J,235
Download Datasheet for BCX70J,235
Nexperia USA Inc.
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 - - - - - - - - 100 mA 250 @ 2mA, 5V - - - 250MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 550mV @ 1.25mA, 50mA 45 V
SPS9607RLRM
SPS9607RLRM
On Semiconductor
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MJD31CH-QJ
MJD31CH-QJ
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Nexperia USA Inc.
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 - - - - - - - - 3 A 120 @ 20mA, 6V - - - 3MHz - - Surface Mount 150°C (TJ) 1.6 W - - DPAK - NPN 1.2V @ 375mA, 3A 100 V
2SAR552PT100
2SAR552PT100
ROHM Semiconductor
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 - - - - - - - - 3 A 200 @ 500mA, 2V - - - 330MHz - - Surface Mount 150°C (TJ) 2 W - - MPT3 - PNP 400mV @ 50mA, 1A 30 V
2SCR552PT100
2SCR552PT100
ROHM Semiconductor
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 - - - - - - - - 3 A 200 @ 500mA, 2V - - - 280MHz - - Surface Mount 150°C (TJ) 2 W - - MPT3 - NPN 400mV @ 50mA, 1A 30 V
2SAR513PHZGT100
2SAR513PHZGT100
ROHM Semiconductor
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 - - - - - - - - 1 A 180 @ 50mA, 2V - - - 400MHz - - Surface Mount 150°C (TJ) 500 mW - - SOT-89 - PNP 400mV @ 25mA, 500mA 50 V
2SAR514PHZGT100
2SAR514PHZGT100
ROHM Semiconductor
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 - - - - - - - - 700 mA 120 @ 100mA, 3V - - - 380MHz - - Surface Mount 150°C (TJ) 500 mW - - SOT-89 - PNP 400mV @ 15mA, 300mA 80 V
2SA1419T-TD-H
2SA1419T-TD-H
On Semiconductor
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 - - - - - - - - 1.5 A 200 @ 100mA, 5V - - - 120MHz - - Surface Mount 150°C (TJ) 500 mW - - PCP - PNP 500mV @ 50mA, 500mA 160 V
BC849C,235
BC849C,235
Nexperia USA Inc.
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 600mV @ 5mA, 100mA 30 V
BC850B,235
BC850B,235
Nexperia USA Inc.
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 600mV @ 5mA, 100mA 45 V
2SC3786
2SC3786
On Semiconductor
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Showing 13001-13050 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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