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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
BD14010S
BD14010S
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On Semiconductor
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 - - - - - - - - 1.5 A 63 @ 150mA, 2V - - - - - - Through Hole 150°C (TJ) 1.25 W - - TO-126-3 - PNP 500mV @ 50mA, 500mA 80 V
BC560BTA
BC560BTA
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 45 V
KSC1187YBU
KSC1187YBU
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 - - - - - - - - 30 mA 120 @ 2mA, 10V - - - 700MHz - - Through Hole 150°C (TJ) 250 mW - - TO-92-3 - NPN - 20 V
BC55-10PAS115
BC55-10PAS115
NXP Semiconductors
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BDX34B
BDX34B
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 - - - - - - - - 10 A 750 @ 3A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 70 W - - TO-220 - PNP - Darlington 2.5V @ 6mA, 3A 80 V
BC237BTA
BC237BTA
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 - - - - - - - - 100 mA 180 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BCW60C
BCW60C
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 - - - - - - - - 100 mA 250 @ 2mA, 5V - - - 125MHz - - Surface Mount - 350 mW - - SOT-23-3 - NPN 550mV @ 1.25mA, 50mA 32 V
KSA940H2TU
KSA940H2TU
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 - - - - - - - - 1.5 A 40 @ 500mA, 10V - - - 4MHz - - Through Hole 150°C (TJ) 1.5 W - - TO-220-3 - PNP 1.5V @ 50mA, 500mA 150 V
BDX34B
BDX34B
Harris Semiconductor
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 - - - - - - - - 10 A 750 @ 3A, 3V - - - - - - Through Hole 150°C (TJ) 70 W - - TO-220 - PNP - Darlington 2.5V @ 6mA, 3A 80 V
BC183LC
BC183LC
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 - - - - - - - - 100 mA 40 @ 10µA, 5V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 30 V
PN2907TFR
PN2907TFR
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On Semiconductor
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 1.6V @ 50mA, 500mA 40 V
TIP115
TIP115
Harris Semiconductor
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 - - - - - - - - 2mA 1000 @ 1A, 4V - - - 25MHz - - Through Hole -65°C ~ 150°C (TJ) - - - TO-220-3 - PNP - Darlington 2.5V @ 8mA, 2A 60 V
KSB564AOBU
KSB564AOBU
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 - - - - - - - - 1 A 70 @ 100mA, 1V - - - 110MHz - - Through Hole 150°C (TJ) 800 mW - - TO-92-3 - PNP 500mV @ 100mA, 1A 25 V
ZTX749
ZTX749
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 - - - - - - - - 2 A 100 @ 1A, 2V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226 - PNP 500mV @ 200mA, 2A 25 V
KSE3055T
KSE3055T
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 - - - - - - - - 10 A 20 @ 4A, 4V - - - 2MHz - - Through Hole 150°C (TJ) 600 mW - - TO-220-3 - NPN 8V @ 3.3A, 10A 60 V
TN6719A
TN6719A
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On Semiconductor
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 - - - - - - - - 200 mA 40 @ 30mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226-3 - NPN 750mV @ 3mA, 30mA 300 V
KSC1845PTA
KSC1845PTA
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 - - - - - - - - 50 mA 200 @ 1mA, 6V - - - 110MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 300mV @ 1mA, 10mA 120 V
2SC3600E
2SC3600E
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2SAR562F3TR
2SAR562F3TR
ROHM Semiconductor
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 - - - - - - - - 6 A 200 @ 500mA, 2V - - - 180MHz - - Surface Mount 150°C (TJ) 1 W - - HUML2020L3 - PNP 300mV @ 150mA, 3A 30 V
2SAR512RHZGTL
2SAR512RHZGTL
ROHM Semiconductor
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 - - - - - - - - 2 A 200 @ 100mA, 2V - - - 430MHz - - Surface Mount 150°C (TJ) 500 mW - - TSMT3 - PNP 400mV @ 35mA, 700mA 30 V
PBSS303NZ,135
PBSS303NZ,135
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Nexperia USA Inc.
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 - - - - - - - - 5.5 A 250 @ 2A, 2V - - - 130MHz - - Surface Mount 150°C (TJ) 2 W - - SOT-223 - NPN 240mV @ 275mA, 5.5A 30 V
STD13003T4
STD13003T4
STMicroelectronics
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 - - - - - - - - 1.5 A 5 @ 1A, 2V - - - - - - Surface Mount 150°C (TJ) 20 W - - DPAK - NPN 3V @ 500mA, 1.5A 400 V
CXTA27 TR PBFREE
CXTA27 TR PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - 125MHz - - Surface Mount -65°C ~ 150°C (TJ) 1.2 W - - SOT-89 - NPN - Darlington 1.5V @ 100µA, 100mA 60 V
NJVMJD32T4G
NJVMJD32T4G
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 - - - - - - - - 3 A 10 @ 3A, 4V - - - 3MHz - - Surface Mount -65°C ~ 150°C (TJ) 1.56 W - - DPAK - PNP 1.2V @ 375mA, 3A 40 V
2SCR564F3TR
2SCR564F3TR
ROHM Semiconductor
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 - - - - - - - - 4 A 120 @ 500mA, 3V - - - 280MHz - - Surface Mount 150°C (TJ) 1 W - - HUML2020L3 - NPN 300mV @ 100mA, 2A 80 V
2SC5265LS
2SC5265LS
On Semiconductor
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CBCP68 TR PBFREE
CBCP68 TR PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 1 A 85 @ 500mA, 1V - - - 65MHz - - Surface Mount -65°C ~ 150°C (TJ) 2 W - - SOT-223 - NPN 500mV @ 100mA, 1A 20 V
NSS40601CF8T1G
NSS40601CF8T1G
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 - - - - - - - - 6 A 200 @ 1A, 2V - - - 140MHz - - Surface Mount -55°C ~ 150°C (TJ) 830 mW - - ChipFET™ - NPN 135mV @ 400mA, 4A 40 V
CZT2907A TR PBFREE
CZT2907A TR PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount -65°C ~ 150°C (TJ) 2 W - - SOT-223 - PNP 1.6V @ 50mA, 500mA 60 V
2N5194 TIN/LEAD
2N5194 TIN/LEAD
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Central Semiconductor Corp
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 - - - - - - - - 4 A 25 @ 1.5A, 2V - - - 2MHz - - Through Hole -65°C ~ 150°C (TJ) 40 W - - TO-126 - PNP 1.4V @ 1A, 4A 60 V
2SCR567F3TR
2SCR567F3TR
ROHM Semiconductor
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 - - - - - - - - 2.5 A 120 @ 100mA, 5V - - - 220MHz - - Surface Mount 150°C (TJ) 1 W - - HUML2020L3 - NPN 200mV @ 80mA, 800mA 120 V
2SAR567F3TR
2SAR567F3TR
ROHM Semiconductor
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 - - - - - - - - 2.5 A 120 @ 100mA, 5V - - - 220MHz - - Surface Mount 150°C (TJ) 1 W - - HUML2020L3 - PNP 200mV @ 80mA, 800mA 120 V
CZT4033 TR PBFREE
CZT4033 TR PBFREE
Download Datasheet for CZT4033 TR PBFREE
Central Semiconductor Corp
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - 100MHz - - Surface Mount -65°C ~ 150°C (TJ) 2 W - - SOT-223 - PNP 500mV @ 50mA, 500mA 80 V
2SAR587D3TL1
2SAR587D3TL1
ROHM Semiconductor
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 - - - - - - - - 3 A 120 @ 100mA, 5V - - - 250MHz - - Surface Mount 150°C (TJ) 10 W - - TO-252 - PNP 200mV @ 100mA, 1A 120 V
2SAR582D3TL1
2SAR582D3TL1
ROHM Semiconductor
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 - - - - - - - - 10 A 200 @ 1A, 3V - - - 230MHz - - Surface Mount 150°C (TJ) 10 W - - TO-252 - PNP 400mV @ 200mA, 4A 30 V
2SAR573D3FRATL
2SAR573D3FRATL
ROHM Semiconductor
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 - - - - - - - - 3 A 180 @ 100mA, 3V - - - - - - Surface Mount 150°C 10 W - - TO-252 - - 400mV @ 50mA, 1A 50 V
2SAR574D3FRATL
2SAR574D3FRATL
ROHM Semiconductor
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 - - - - - - - - 2 A 180 @ 100mA, 3V - - - - - - Surface Mount 150°C (TJ) 10 W - - TO-252 - - 400mV @ 50mA, 1A 80 V
2SD2014
2SD2014
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Sanken
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 - - - - - - - - 4 A 2000 @ 3A, 2V - - - 75MHz - - Through Hole 150°C (TJ) 25 W - - TO-220F - NPN - Darlington 1.5V @ 3mA, 3A 80 V
2SCR573D3FRATL
2SCR573D3FRATL
ROHM Semiconductor
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 - - - - - - - - 3 A 180 @ 100mA, 3V - - - 320MHz - - Surface Mount 150°C (TJ) 10 W - - TO-252 - NPN 350mV @ 50mA, 1A 50 V
2SAR586JGTLL
2SAR586JGTLL
ROHM Semiconductor
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 - - - - - - - - 5 A 120 @ 500mA, 3V - - - 200MHz - - Surface Mount 150°C (TJ) 40 W - - LPTL - PNP 320mV @ 100mA, 2A 80 V
2SAR586D3FRATL
2SAR586D3FRATL
ROHM Semiconductor
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 - - - - - - - - 5 A 120 @ 500mA, 3V - - - - - - Surface Mount 150°C (TJ) 10 W - - TO-252 - - 320mV @ 100mA, 2A 80 V
MJE180 PBFREE
MJE180 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 3 A 50 @ 100mA, 1V - - - 50MHz - - Through Hole -65°C ~ 150°C (TJ) 1.5 W - - TO-126 - NPN 1.7V @ 600mA, 3A 40 V
BUL89
BUL89
STMicroelectronics
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 - - - - - - - - 12 A 10 @ 5A, 5V - - - - - - Through Hole 150°C (TJ) 110 W - - TO-220 - NPN 5V @ 2.4A, 12A 400 V
BUB323ZT4G
BUB323ZT4G
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On Semiconductor
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 - - - - - - - - 10 A 500 @ 5A, 4.6V - - - 2MHz - - Surface Mount -65°C ~ 175°C (TJ) 150 W - - D²PAK - NPN - Darlington 1.7V @ 250mA, 10A 350 V
FMMT411FDBWQ-7
FMMT411FDBWQ-7
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Diodes Incorporated
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 - - - - - - - - 5 A 100 @ 10mA, 10V - - - 110MHz - - Surface Mount -55°C ~ 150°C (TJ) 820 mW - - W-DFN2020-3 (Type A) - - 100mV @ 1mA, 10mA 15 V
2N3467 PBFREE
2N3467 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 1 A 40 @ 500mA, 1V - - - 175MHz - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 - PNP 1V @ 100mA, 1A 40 V
2N4237 PBFREE
2N4237 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 3 A 30 @ 250mA, 1V - - - 2MHz - - Through Hole -65°C ~ 200°C (TJ) 6 W - - TO-39 - NPN 600mV @ 100mA, 1A 40 V
2SC6145
2SC6145
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Sanken
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 - - - - - - - - 15 A 40 @ 5A, 4V - - - 60MHz - - Through Hole 150°C (TJ) 160 W - - TO-3P - NPN 500mV @ 500mA, 5A 230 V
2N3421 PBFREE
2N3421 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 500nA (ICBO) 40 @ 1A, 2V - - - 40MHz - - Through Hole -65°C ~ 200°C (TJ) - - - TO-39 - NPN - 80 V
STD01P
STD01P
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Sanken
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 - - - - - - - - 10 A 5000 @ 6A, 4V - - - - - - Through Hole 150°C (TJ) 100 W - - TO-3P-5L - PNP - Darlington 2V @ 6mA, 6A 150 V
Showing 13051-13100 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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