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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
ZTX560
ZTX560
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Diodes Incorporated
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 150 mA 80 @ 50mA, 10V 60MHz Through Hole -55°C ~ 150°C (TJ) 1 W E-Line (TO-92 compatible) PNP 500mV @ 10mA, 50mA 500 V
2SD1803T-TL-H
2SD1803T-TL-H
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On Semiconductor
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 5 A 200 @ 500mA, 2V 180MHz Surface Mount 150°C (TJ) 1 W TP-FA NPN 400mV @ 150mA, 3A 50 V
CXTA42 TR PBFREE
CXTA42 TR PBFREE
Download Datasheet for CXTA42 TR PBFREE
Central Semiconductor Corp
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 500 mA 40 @ 30mA, 10V 50MHz Surface Mount -65°C ~ 150°C (TJ) 1.2 W SOT-89 NPN 500mV @ 2mA, 20mA 300 V
KST4126MTF
KST4126MTF
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On Semiconductor
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 200 mA 120 @ 2mA, 1V 250MHz Surface Mount - 350 mW SOT-23-3 PNP 400mV @ 5mA, 50mA 25 V
2N3117 PBFREE
2N3117 PBFREE
Download Datasheet for 2N3117 PBFREE
Central Semiconductor Corp
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 50 mA 250 @ 10µA, 5V - Through Hole -65°C ~ 200°C (TJ) 360 mW TO-18 NPN 350mV @ 100µA, 1mA 60 V
2N3500
2N3500
Microchip Technology
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 300 mA 40 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) NPN 400mV @ 15mA, 150mA 150 V
BUV21G
BUV21G
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On Semiconductor
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 40 A 20 @ 12A, 2V 8MHz Through Hole -65°C ~ 200°C (TJ) 250 W TO-204 (TO-3) NPN 1.5V @ 3A, 25A 200 V
BC849A
BC849A
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Diotec Semiconductor
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 100 mA 110 @ 2mA, 5V 300MHz Surface Mount -55°C ~ 150°C (TJ) 250 mW SOT-23-3 (TO-236) NPN 600mV @ 5mA, 100mA 30 V
BC850A
BC850A
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Diotec Semiconductor
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 100 mA 110 @ 2mA, 5V 300MHz Surface Mount -55°C ~ 150°C (TJ) 250 mW SOT-23-3 (TO-236) NPN 600mV @ 5mA, 100mA 45 V
BC849B
BC849B
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Diotec Semiconductor
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 100 mA 200 @ 2mA, 5V 300MHz Surface Mount -55°C ~ 150°C (TJ) 250 mW SOT-23-3 (TO-236) NPN 600mV @ 5mA, 100mA 30 V
BC850B
BC850B
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Diotec Semiconductor
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 100 mA 200 @ 2mA, 5V 300MHz Surface Mount -55°C ~ 150°C (TJ) 250 mW SOT-23-3 (TO-236) NPN 600mV @ 5mA, 100mA 45 V
BC856A
BC856A
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Diotec Semiconductor
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 100 mA 125 @ 2mA, 5V 100MHz Surface Mount -55°C ~ 150°C (TJ) 250 mW SOT-23-3 (TO-236) PNP 650mV @ 5mA, 100mA 65 V
PN3567
PN3567
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On Semiconductor
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 600 mA 40 @ 150mA, 1V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 250mV @ 15mA, 150mA 40 V
KSA733CLTA
KSA733CLTA
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On Semiconductor
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 150 mA 350 @ 1mA, 6V 180MHz Through Hole 150°C (TJ) 250 mW TO-92-3 PNP 300mV @ 10mA, 100mA 50 V
KSC900LBU
KSC900LBU
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On Semiconductor
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 50 mA 350 @ 500µA, 3V 100MHz Through Hole 150°C (TJ) 250 mW TO-92-3 NPN 200mV @ 2mA, 20mA 25 V
KSD227YBU
KSD227YBU
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On Semiconductor
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 300 mA 120 @ 50mA, 1V - Through Hole 150°C (TJ) 400 mW TO-92-3 NPN 400mV @ 30mA, 300mA 25 V
KSC838CYTA
KSC838CYTA
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On Semiconductor
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 30 mA 120 @ 2mA, 12V 250MHz Through Hole 150°C (TJ) 250 mW TO-92-3 NPN 400mV @ 1mA, 10mA 30 V
2N3905TFR
2N3905TFR
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On Semiconductor
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 200 mA 50 @ 10mA, 1V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 400mV @ 5mA, 50mA 40 V
KSC1675RBU
KSC1675RBU
On Semiconductor
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 50 mA 40 @ 1mA, 6V 300MHz Through Hole - 250 mW TO-92-3 NPN 300mV @ 1mA, 10mA 30 V
KSA1175YBU
KSA1175YBU
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 150 mA 120 @ 1mA, 6V 180MHz Through Hole 150°C (TJ) 250 mW TO-92S PNP 300mV @ 10mA, 100mA 50 V
KSC900GTA
KSC900GTA
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On Semiconductor
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 50 mA 200 @ 500µA, 3V 100MHz Through Hole 150°C (TJ) 250 mW TO-92-3 NPN 200mV @ 2mA, 20mA 25 V
KST24MTF
KST24MTF
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On Semiconductor
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 100 mA 30 @ 8mA, 10V 620MHz Surface Mount - 350 mW SOT-23-3 NPN - 30 V
KSC900LTA
KSC900LTA
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On Semiconductor
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 50 mA 350 @ 500µA, 3V 100MHz Through Hole 150°C (TJ) 250 mW TO-92-3 NPN 200mV @ 2mA, 20mA 25 V
2N4402TFR
2N4402TFR
On Semiconductor
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 600 mA 50 @ 150mA, 2V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 750mV @ 50mA, 500mA 40 V
2N3903
2N3903
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On Semiconductor
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 200 mA 50 @ 10mA, 1V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 300mV @ 5mA, 50mA 40 V
KSC1623OMTF
KSC1623OMTF
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On Semiconductor
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 100 mA 90 @ 1mA, 6V 250MHz Surface Mount 150°C (TJ) 200 mW SOT-23-3 NPN 300mV @ 10mA, 100mA 50 V
MMBT3702
MMBT3702
Download Datasheet for MMBT3702
On Semiconductor
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 800 mA 60 @ 50mA, 5V 100MHz Surface Mount -55°C ~ 150°C (TJ) 350 mW SOT-23-3 PNP 250mV @ 5mA, 50mA 25 V
KSA733CGTA
KSA733CGTA
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On Semiconductor
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 150 mA 200 @ 1mA, 6V 180MHz Through Hole 150°C (TJ) 250 mW TO-92-3 PNP 300mV @ 10mA, 100mA 50 V
KSC2669YTA
KSC2669YTA
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On Semiconductor
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 30 mA 120 @ 2mA, 12V 250MHz Through Hole 150°C (TJ) 200 mW TO-92S NPN 400mV @ 1mA, 10mA 30 V
KSC2785YBU
KSC2785YBU
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On Semiconductor
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 150 mA 120 @ 1mA, 6V 300MHz Through Hole 150°C (TJ) 250 mW TO-92S NPN 300mV @ 10mA, 100mA 50 V
BC32825TA
BC32825TA
On Semiconductor
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 800 mA 160 @ 100mA, 1V 100MHz Through Hole 150°C (TJ) 625 mW TO-92-3 PNP 700mV @ 50mA, 500mA 25 V
MPSH34
MPSH34
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On Semiconductor
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 50 mA 15 @ 20mA, 2V 500MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 500mV @ 2mA, 7mA 40 V
KSC2223OMTF
KSC2223OMTF
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On Semiconductor
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 20 mA 60 @ 1mA, 6V 600MHz Surface Mount 150°C (TJ) 150 mW SOT-23-3 NPN 300mV @ 1mA, 10mA 20 V
2N5086BU
2N5086BU
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On Semiconductor
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 100 mA 150 @ 100µA, 5V 40MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 300mV @ 1mA, 10mA 50 V
KSC838COTA
KSC838COTA
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On Semiconductor
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 30 mA 70 @ 2mA, 12V 250MHz Through Hole 150°C (TJ) 250 mW TO-92-3 NPN 400mV @ 1mA, 10mA 30 V
2N4402TF
2N4402TF
On Semiconductor
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 600 mA 50 @ 150mA, 2V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 750mV @ 50mA, 500mA 40 V
PDTA143XQA147
PDTA143XQA147
Download Datasheet for PDTA143XQA147
NXP Semiconductors
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SS9013GBU
SS9013GBU
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On Semiconductor
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 500 mA 112 @ 50mA, 1V - Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 600mV @ 50mA, 500mA 20 V
BC548CTAR
BC548CTAR
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On Semiconductor
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 100 mA 420 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC817-16
BC817-16
Infineon Technologies
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 800 mA 100 @ 100mA, 1V 100MHz Surface Mount -65°C ~ 150°C (TJ) 310 mW SOT23-3 (TO-236) NPN 700mV @ 50mA, 500mA 45 V
BC548BBU
BC548BBU
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 100 mA 200 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC558CTA
BC558CTA
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On Semiconductor
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 100 mA 420 @ 2mA, 5V 150MHz Through Hole 150°C (TJ) 500 mW TO-92-3 PNP 650mV @ 5mA, 100mA 30 V
BC238CBU
BC238CBU
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On Semiconductor
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 100 mA 380 @ 2mA, 5V 250MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 25 V
BC556BBU
BC556BBU
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On Semiconductor
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 100 mA 200 @ 2mA, 5V 150MHz Through Hole 150°C (TJ) 500 mW TO-92-3 PNP 650mV @ 5mA, 100mA 65 V
BC548ATA
BC548ATA
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On Semiconductor
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 100 mA 110 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC548CBU
BC548CBU
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On Semiconductor
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 100 mA 420 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC32840TA
BC32840TA
On Semiconductor
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 800 mA 250 @ 100mA, 1V 100MHz Through Hole 150°C (TJ) 625 mW TO-92-3 PNP 700mV @ 50mA, 500mA 25 V
BCX799
BCX799
On Semiconductor
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 500 mA 80 @ 10mA, 1V - Through Hole - 625 mW TO-92-3 PNP 600mV @ 2.5mA, 100mA 45 V
BC549CBU
BC549CBU
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On Semiconductor
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 100 mA 420 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC640TF
BC640TF
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On Semiconductor
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 1 A 40 @ 150mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 500mV @ 50mA, 500mA 80 V
Showing 13251-13300 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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