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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
PBSS5560PA,115
PBSS5560PA,115
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Nexperia USA Inc.
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 - - - - - - - - 5 A 150 @ 2A, 2V - - - 90MHz - - Surface Mount 150°C (TJ) 2.1 W - - 3-HUSON (2x2) - PNP 450mV @ 250mA, 5A 60 V
MMDT3906Q
MMDT3906Q
Yangzhou Yangjie Electronic Technology Co.,Ltd
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BCX56-TP
BCX56-TP
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Micro Commercial
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 130MHz - - Surface Mount 150°C (TJ) 500 mW - - SOT-89 - NPN 500mV @ 50mA, 500mA 80 V
AC848BQ-13
AC848BQ-13
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Diodes Incorporated
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 300MHz - - Surface Mount -65°C ~ 150°C (TJ) 310 mW - - SOT-23-3 - NPN 600mV @ 5mA, 100mA 30 V
PBSS5260QAZ
PBSS5260QAZ
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Nexperia USA Inc.
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 - - - - - - - - 1.7 A 30 @ 1.7A, 2V - - - 150MHz - - Surface Mount 150°C (TJ) 325 mW - - DFN1010D-3 - PNP 400mV @ 50mA, 1A 60 V
DXTN10060DFJBQ-7
DXTN10060DFJBQ-7
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Diodes Incorporated
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 - - - - - - - - 4 A 340 @ 200mA, 2V - - - 125MHz - - Surface Mount -55°C ~ 175°C (TJ) 1.8 W - - U-DFN2020-3 (Type B) - NPN 320mV @ 200mA, 4A 60 V
2SC14730RA
2SC14730RA
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Panasonic Electronic Components
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 - - - - - - - - 70 mA 100 @ 5mA, 10V - - - 80MHz - - Through Hole 150°C (TJ) 750 mW - - TO-92-B1 - NPN 1.2V @ 5mA, 50mA 200 V
BSV52,215
BSV52,215
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 40 @ 10mA, 1V - - - 500MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 400mV @ 5mA, 50mA 12 V
BUK9Y30-75B/C1,115
BUK9Y30-75B/C1,115
NXP Semiconductors
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UMT4403U3T106
UMT4403U3T106
ROHM Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 1V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - PNP 750mV @ 50mA, 500mA 40 V
2SARA41CHZGT116S
2SARA41CHZGT116S
ROHM Semiconductor
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 - - - - - - - - 50 mA 180 @ 2mA, 6V - - - 140MHz - - Surface Mount 150°C (TJ) 200 mW - - SOT-323 - PNP 500mV @ 1mA, 10mA 120 V
2SD1757KT146Q
2SD1757KT146Q
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ROHM Semiconductor
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 - - - - - - - - 500 mA 120 @ 100mA, 3V - - - 150MHz - - Surface Mount 150°C (TJ) 200 mW - - SMT3 - NPN 400mV @ 50mA, 500mA 15 V
CMPTA64 TR PBFREE
CMPTA64 TR PBFREE
Download Datasheet for CMPTA64 TR PBFREE
Central Semiconductor Corp
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 125MHz - - Surface Mount -65°C ~ 150°C (TJ) 350 mW - - SOT-23 - PNP - Darlington 1.5V @ 100µA, 100mA 30 V
2SARA41CHZGT116R
2SARA41CHZGT116R
ROHM Semiconductor
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 - - - - - - - - 50 mA 180 @ 2mA, 6V - - - 140MHz - - Surface Mount 150°C (TJ) 200 mW - - SST3 - PNP 500mV @ 1mA, 10mA 120 V
PBSS4032NT,215
PBSS4032NT,215
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Nexperia USA Inc.
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 - - - - - - - - 2.6 A 300 @ 1A, 2V - - - 180MHz - - Surface Mount 150°C (TJ) 1.1 W - - TO-236AB - NPN 320mV @ 300mA, 3A 30 V
2SD1757KT146R
2SD1757KT146R
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ROHM Semiconductor
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 - - - - - - - - 500 mA 120 @ 100mA, 3V - - - 150MHz - - Surface Mount 150°C (TJ) 200 mW - - SMT3 - NPN 400mV @ 50mA, 500mA 15 V
2SCR512RTL
2SCR512RTL
ROHM Semiconductor
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 - - - - - - - - 2 A 200 @ 100mA, 2V - - - 320MHz - - Surface Mount 150°C (TJ) 1 W - - TSMT3 - NPN 400mV @ 35mA, 700mA 30 V
MJD148J
MJD148J
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Nexperia USA Inc.
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 - - - - - - - - 4 A 85 @ 500mA, 1V - - - 3MHz - - Surface Mount 150°C (TJ) 1.6 W - - DPAK - NPN 500mV @ 200mA, 2A 45 V
2STF1525
2STF1525
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STMicroelectronics
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 - - - - - - - - 5 A 150 @ 500mA, 2V - - - 120MHz - - Surface Mount 150°C (TJ) 1.4 W - - SOT-89 - NPN 500mV @ 40mA, 3.5A 25 V
UML6NTR
UML6NTR
ROHM Semiconductor
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 - - - - - - - - 500 mA 270 @ 10mA, 2V - - - 320MHz - - Surface Mount 150°C (TJ) 120 mW - - UMT5 - NPN + Diode (Isolated) 250mV @ 10mA, 200mA 12 V
TSC497CX RFG
TSC497CX RFG
Taiwan Semiconductor
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 - - - - - - - - 500 mA 100 @ 1mA, 10V - - - 75MHz - - Surface Mount 150°C (TJ) 500 mW - - SOT-23 - NPN 300mV @ 25mA, 250mA 300 V
2SA2195,LF
2SA2195,LF
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Toshiba
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 - - - - - - - - 1.7 A 200 @ 300mA, 2V - - - - - - Surface Mount 150°C (TJ) 500 mW - - UFM - PNP 200mV @ 33mA, 1A 50 V
PBHV9515QAZ
PBHV9515QAZ
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 100 @ 200mA, 10V - - - 75MHz - - Surface Mount 150°C (TJ) 325 mW - - DFN1010D-3 - PNP 100mV @ 5mA, 50mA 150 V
PBSS5580PA,115
PBSS5580PA,115
Download Datasheet for PBSS5580PA,115
Nexperia USA Inc.
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 - - - - - - - - 4 A 140 @ 2A, 2V - - - 110MHz - - Surface Mount 150°C (TJ) 2.1 W - - 3-HUSON (2x2) - PNP 420mV @ 200mA, 4A 80 V
PBSS4440D,115
PBSS4440D,115
Download Datasheet for PBSS4440D,115
Nexperia USA Inc.
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 - - - - - - - - 4 A 250 @ 2A, 2V - - - 150MHz - - Surface Mount 150°C (TJ) 1.1 W - - 6-TSOP - NPN 450mV @ 600mA, 6A 40 V
2SCR514RTL
2SCR514RTL
ROHM Semiconductor
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 - - - - - - - - 700 mA 120 @ 100mA, 3V - - - 320MHz - - Surface Mount 150°C (TJ) 1 W - - TSMT3 - NPN 300mV @ 15mA, 300mA 80 V
2SA2088U3HZGT106Q
2SA2088U3HZGT106Q
Download Datasheet for 2SA2088U3HZGT106Q
ROHM Semiconductor
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 - - - - - - - - 500 mA 120 @ 50mA, 2V - - - 400MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - PNP 500mV @ 10mA, 100mA 60 V
2SCRC41CHZGT116R
2SCRC41CHZGT116R
Download Datasheet for 2SCRC41CHZGT116R
ROHM Semiconductor
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 - - - - - - - - 50 mA 180 @ 2mA, 6V - - - 140MHz - - Surface Mount 150°C (TJ) 200 mW - - SST3 - NPN 500mV @ 1mA, 10mA 120 V
MJD148-QJ
MJD148-QJ
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Nexperia USA Inc.
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 - - - - - - - - 4 A 85 @ 500mA, 1V - - - 3MHz - - Surface Mount 150°C (TJ) 1.6 W - - DPAK - NPN 500mV @ 200mA, 2A 45 V
2SCRC41CHZGT116S
2SCRC41CHZGT116S
Download Datasheet for 2SCRC41CHZGT116S
ROHM Semiconductor
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 - - - - - - - - 50 mA 180 @ 2mA, 6V - - - 140MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SST3 - NPN 500mV @ 1mA, 10mA 120 V
ZXTP25040DZTA
ZXTP25040DZTA
Download Datasheet for ZXTP25040DZTA
Diodes Incorporated
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 - - - - - - - - 3 A 300 @ 10mA, 2V - - - 270MHz - - Surface Mount -55°C ~ 150°C (TJ) 2.4 W - - SOT-89-3 - PNP 350mV @ 350mA, 3.5A 40 V
2SAR552P5T100
2SAR552P5T100
ROHM Semiconductor
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 - - - - - - - - 3 A 200 @ 500mA, 2V - - - 330MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - PNP 400mV @ 50mA, 1A 30 V
ZXTN617MATA
ZXTN617MATA
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Diodes Incorporated
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 - - - - - - - - 4.5 A 200 @ 3A, 2V - - - 120MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.5 W - - DFN2020B-3 - NPN 280mV @ 50mA, 4.5A 15 V
DXTP07060BFG-7
DXTP07060BFG-7
Download Datasheet for DXTP07060BFG-7
Diodes Incorporated
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 - - - - - - - - 3 A 100 @ 500mA, 2V - - - 140MHz - - Surface Mount, Wettable Flank -55°C ~ 175°C (TJ) 900 mW - - PowerDI3333-8 (SWP) Type UX - PNP 500mV @ 300mA, 3A 60 V
TS13005CK C0G
TS13005CK C0G
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Taiwan Semiconductor
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 - - - - - - - - 3 A 24 @ 425mA, 2V - - - - - - Through Hole 150°C (TJ) - - - TO-126 - NPN 1V @ 200mA, 1A 400 V
DXTN07100BFG-7
DXTN07100BFG-7
Download Datasheet for DXTN07100BFG-7
Diodes Incorporated
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 - - - - - - - - 2 A 100 @ 500mA, 2V - - - 175MHz - - Surface Mount, Wettable Flank -55°C ~ 175°C (TJ) 900 mW - - PowerDI3333-8 (SWP) Type UX - NPN 400mV @ 200mA, 2A 100 V
2SAR293PHZGT100
2SAR293PHZGT100
ROHM Semiconductor
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 - - - - - - - - 1 A 270 @ 100mA, 2V - - - 320MHz - - Surface Mount 150°C (TJ) 500 mW - - SOT-89 - PNP 350mV @ 25mA, 500mA 30 V
2SAR514RTL
2SAR514RTL
ROHM Semiconductor
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 - - - - - - - - 700 mA 120 @ 100mA, 3V - - - 380MHz - - Surface Mount 150°C (TJ) 1 W - - TSMT3 - PNP 400mV @ 15mA, 300mA 80 V
2SD2701TL
2SD2701TL
ROHM Semiconductor
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 - - - - - - - - 2 A 270 @ 100mA, 2V - - - 300MHz - - Surface Mount 150°C (TJ) 800 mW - - TUMT3 - NPN 350mV @ 50mA, 1A 12 V
2SCR341QTR
2SCR341QTR
ROHM Semiconductor
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 - - - - - - - - 100 mA 82 @ 10mA, 10V - - - - - - Surface Mount 150°C (TJ) 500 mW - - TSMT6 (SC-95) - NPN 300mV @ 2mA, 20mA 400 V
2SAR340QTR
2SAR340QTR
ROHM Semiconductor
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 - - - - - - - - 100 mA 82 @ 10mA, 10V - - - - - - Surface Mount 150°C (TJ) 500 mW - - TSMT6 (SC-95) - PNP 400mV @ 2mA, 20mA 400 V
FCX789ATA
FCX789ATA
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Diodes Incorporated
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 - - - - - - - - 3 A 300 @ 10mA, 2V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 2 W - - SOT-89-3 - PNP 320mV @ 100mA, 3A 25 V
ZXTP25020DZTA
ZXTP25020DZTA
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Diodes Incorporated
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 - - - - - - - - 5 A 300 @ 10mA, 2V - - - 290MHz - - Surface Mount -55°C ~ 150°C (TJ) 2.4 W - - SOT-89-3 - PNP 265mV @ 500mA, 5A 20 V
2SA1418T-TD-E
2SA1418T-TD-E
On Semiconductor
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 - - - - - - - - - - - - - - - - Surface Mount - - - - PCP - - - -
2SB1706TL
2SB1706TL
ROHM Semiconductor
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 - - - - - - - - 2 A 270 @ 200mA, 2V - - - 280MHz - - Surface Mount 150°C (TJ) 500 mW - - TSMT3 - PNP 370mV @ 75mA, 1.5A 30 V
NJVMJD31T4G
NJVMJD31T4G
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On Semiconductor
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 - - - - - - - - 3 A 10 @ 3A, 4V - - - 3MHz - - Surface Mount -65°C ~ 150°C (TJ) 1.56 W - - DPAK - NPN 1.2V @ 375mA, 3A 40 V
2N3708 PBFREE
2N3708 PBFREE
Download Datasheet for 2N3708 PBFREE
Central Semiconductor Corp
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 - - - - - - - - 100nA (ICBO) 45 @ 1mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) - - - TO-92-3 - NPN - 30 V
2SA2153-TD-E
2SA2153-TD-E
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On Semiconductor
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 - - - - - - - - 2 A 200 @ 100mA, 2V - - - 420MHz - - Surface Mount 150°C (TJ) 3.5 W - - PCP - PNP 400mV @ 50mA, 1A 50 V
PBSS304PX,115
PBSS304PX,115
Download Datasheet for PBSS304PX,115
Nexperia USA Inc.
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 - - - - - - - - 4.2 A 150 @ 2A, 2V - - - 130MHz - - Surface Mount 150°C (TJ) 2.1 W - - SOT-89 - PNP 310mV @ 210mA, 4.2A 60 V
NSV40300MZ4T1G
NSV40300MZ4T1G
Download Datasheet for NSV40300MZ4T1G
On Semiconductor
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 - - - - - - - - 3 A 175 @ 1A, 1V - - - 160MHz - - Surface Mount -55°C ~ 150°C (TJ) 2 W - - SOT-223 (TO-261) - PNP 400mV @ 300mA, 3A 40 V
Showing 13351-13400 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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