TPCA8A09-H
Toshiba
TPCA8A09-H is a surface-mount MOSFET by Toshiba with 30V breakdown voltage and 45W power dissipation. It features a low 6.7mOhm drain-source resistance in an SOP-8-ADV package.
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60,267 pcs
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60267 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 0840+ | On Request | On Request |
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The Toshiba TPCA8039-H is a Silicon N-Channel MOSFET manufactured by Toshiba. This component is designed for various electronic applications requiring reliable switching and amplification.
Key electrical specifications include a minimum breakdown voltage of 30V and a minimum drain-source resistance of 6.6mΩ. The maximum power dissipation is rated at 45W, and it can operate at temperatures up to 150°C.
This MOSFET is suitable for designs where efficient power handling and stable performance are critical. Its specifications make it a versatile component for power management circuits and other semiconductor applications.
Further details regarding package type, mounting, and specific electrical characteristics can be found in the manufacturer's datasheet.
| Qty | Low | High |
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| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage for the TPCA8039-H is 30V.
The maximum operating temperature for the TPCA8039-H is 150°C.
The minimum drain-source resistance of the TPCA8039-H is 6.6mΩ.
The maximum power dissipation for the TPCA8039-H is 45W.