TPCA8A09-H
Toshiba
TPCA8A09-H is a surface-mount MOSFET by Toshiba with 30V breakdown voltage and 45W power dissipation. It features a low 6.7mOhm drain-source resistance in an SOP-8-ADV package.
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2,178 pcs
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2178 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The Toshiba TPCA8A09 is a Silicon N-Channel MOSFET designed for various electronic applications. This component offers a maximum breakdown voltage of 30V and a maximum power dissipation of 45W. Its drain-source resistance is specified at a minimum of 6.7mΩ.
The MOSFET operates at a maximum temperature of 150°C and is suitable for applications requiring a frequency of 1MHz. It is manufactured by Toshiba and comes in a SOP-8-ADV package, designed for surface mounting.
This N-Channel MOSFET is part of Toshiba's line of power transistors, suitable for power management and switching applications where reliable performance and specific electrical characteristics are required.
The maximum breakdown voltage is 30V.
The maximum power dissipation is 45W.
The minimum drain-source resistance is 6.7mΩ.
The maximum operating temperature is 150°C.
The TPCA8A09 is supplied in a SOP-8-ADV package.
The standard package quantity is 3000 units.