| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
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| SVHC Present |
The Toshiba TPCA8A02-H is a Silicon N-Channel MOSFET designed for various electronic applications. This component offers a breakdown voltage of 30V and a minimum drain-source on-resistance of 6.7mΩ.
With a maximum power dissipation of 45W and an operating temperature range up to 150°C, the TPCA8A02-H is suitable for demanding environments. It operates at frequencies up to 1MHz.
The MOSFET is housed in a SOP-8-ADV package, designed for surface mounting. The standard package quantity is 3000 units, making it suitable for volume production.
This component is RoHS3 compliant, has an MSL of 1, and is REACH unaffected, indicating adherence to environmental standards.
The minimum breakdown voltage is 30V.
The minimum drain-source on-resistance is 6.7mΩ.
The maximum power dissipation is 45W.
The maximum operating temperature is 150°C.
It is in a SOP-8-ADV package.
The standard package quantity is 3000.