TPCA8A02--H The Toshiba TPCA8A02-H is a Silicon N-Channel MOSFET. It features a 30V breakdown voltage and 6.7mΩ minimum drain-source resistance.
Mfr Part #:

TPCA8A02--H

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPCA8A02-H is a Silicon N-Channel MOSFET. It features a 30V breakdown voltage and 6.7mΩ minimum drain-source resistance.
✓ Total Stock: 4,000 pcs

TPCA8A02--H Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request 08+ On Request On Request

TPCA8A02--H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Frequency
Mounting Type
Operating Temperature
Power Dissipation
SVHC Present

TPCA8A02--H Description

Short technical summary and product information.

The Toshiba TPCA8A02-H is a Silicon N-Channel MOSFET designed for various electronic applications. This component offers a breakdown voltage of 30V and a minimum drain-source on-resistance of 6.7mΩ.

 

With a maximum power dissipation of 45W and an operating temperature range up to 150°C, the TPCA8A02-H is suitable for demanding environments. It operates at frequencies up to 1MHz.

 

The MOSFET is housed in a SOP-8-ADV package, designed for surface mounting. The standard package quantity is 3000 units, making it suitable for volume production.

 

This component is RoHS3 compliant, has an MSL of 1, and is REACH unaffected, indicating adherence to environmental standards.

TPCA8A02--H Quick Information

Product Type: MOSFET
Canonical Name: Toshiba TPCA8A02-H Silicon N-Channel MOSFET
Subcategory: N-Channel

TPCA8A02--H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPCA8A02--H Features

  • Silicon N-Channel MOSFET technology.
  • 30V minimum breakdown voltage.
  • 6.7mΩ minimum drain-source resistance.
  • 45W maximum power dissipation.
  • SOP-8-ADV surface mount package.

TPCA8A02--H Applications

  • Suitable for power switching applications.
  • Used in general electronic circuits.
  • Ideal for compact designs.
  • Component for high-frequency circuits.

TPCA8A02--H FAQs

6 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the TPCA8A02-H?

The minimum breakdown voltage is 30V.

What is the drain-source on-resistance?

The minimum drain-source on-resistance is 6.7mΩ.

What is the maximum power dissipation?

The maximum power dissipation is 45W.

What is the maximum operating temperature?

The maximum operating temperature is 150°C.

What package type is the TPCA8A02-H in?

It is in a SOP-8-ADV package.

What is the standard package quantity?

The standard package quantity is 3000.

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TPCA8A09-H is a surface-mount MOSFET by Toshiba with 30V breakdown voltage and 45W power dissipation. It features a low 6.7mOhm drain-source resistance in an SOP-8-ADV package.
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The Toshiba TPCA8A09 is a Silicon N-Channel MOSFET. It features a 30V breakdown voltage and 45W maximum power dissipation.
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