TPCA8A02--H
Toshiba
The Toshiba TPCA8A02-H is a Silicon N-Channel MOSFET. It features a 30V breakdown voltage and 6.7mΩ minimum drain-source resistance.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,000 pcs
|
7000 pcs | On Request | 1 | On Request | On Request | 1642+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| SVHC Present |
The TPCA8A09-H is a single MOSFET from Toshiba designed for high-efficiency switching applications. With a maximum breakdown voltage of 30V and a low typical drain-source resistance of 6.7mOhm, it minimizes conduction losses. The device can dissipate up to 45W and operates at frequencies up to 1MHz, making it suitable for power management circuits. It comes in a compact SOP-8-ADV package for surface-mount assembly, supplied on tape and reel in quantities of 3000. The maximum operating temperature is 150°C, allowing use in demanding thermal environments.
30V maximum.
6.7 mOhm minimum.
45W maximum.
150°C maximum.
1MHz.
SOP-8-ADV surface mount package.