| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,980 pcs
|
3980 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
2,960 pcs
|
2960 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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The Toshiba TPC8086 is a general-purpose small signal MOSFET designed for switching applications. It operates in enhancement mode and features an N-channel configuration with a built-in diode.
Key electrical specifications include a minimum breakdown voltage of 30V and a maximum drain current (ID) of 17A. The drain-source on-resistance (Rds(on)) is specified at a maximum of 0.0085 ohms, indicating efficient power handling.
This MOSFET utilizes Metal-Oxide Semiconductor (MOS) FET technology. It is housed in a small outline package, specifically the 2-6J1S SOP-8, and is designed for surface mounting with gull wing terminals.
The TPC8086 is classified as RoHS3 Compliant, with an MSL rating of 1 Unlimited and REACH Unaffected status. This component is suitable for various electronic designs requiring reliable switching performance.
30 V.
17 A.
0.0085 Ohms.
2-6J1S small outline surface mount package with gull wing terminals.
Single with built-in diode.
Enhancement mode.
N-Channel.
