DistyParts Icon
SSM6K210FE The Toshiba SSM6K210FE is an N-Channel MOSFET designed for switching applications. It features a 30V breakdown voltage and a maximum drain current of 1.4A.
Mfr Part #:

SSM6K210FE

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba SSM6K210FE is an N-Channel MOSFET designed for switching applications. It features a 30V breakdown voltage and a maximum drain current of 1.4A.
✓ Total Stock: 4,708 pcs
$ Price Range: $0.99

SSM6K210FE Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
4,708 pcs
On Request
4708 pcs On Request 1 On Request On Request 17+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SSM6K210FE Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Channel Type
Configuration
Mounting Type
Operating Mode
Transistor Type
View Similar Products (0)

SSM6K210FE Description

Short technical summary and product information.

This Toshiba SSM6K210FE is a general-purpose small signal N-Channel MOSFET. It operates in enhancement mode and features a built-in diode. The device has a minimum breakdown voltage of 30V and a maximum drain current of 1.4A. Its on-resistance is a maximum of 0.371 Ohms.

 

The MOSFET utilizes Metal-Oxide Semiconductor (MOS) FET technology. It is housed in an ES6, 2-2N1A, 6-pin small outline rectangular package, designed for surface mounting. The package body is made of plastic/epoxy with flat, dual terminals.

 

This component is suitable for various switching applications in electronic circuits.

SSM6K210FE Quick Information

Product Type: MOSFET
Canonical Name: Toshiba SSM6K210FE N-Channel MOSFET
Subcategory: N-Channel

SSM6K210FE Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SSM6K210FE Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SSM6K210FE Features

  • N-Channel MOSFET for switching applications.
  • 30V minimum breakdown voltage.
  • 1.4A maximum drain current.
  • Small outline surface mount package.
  • Built-in diode for added functionality.

SSM6K210FE Applications

  • Used in power switching circuits
  • Suitable for motor control modules
  • Ideal for compact electronic devices
  • Applicable in power management systems

SSM6K210FE FAQs

5 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the SSM6K210FE?

The minimum breakdown voltage is 30V.

What is the maximum drain current for the SSM6K210FE?

The maximum drain current is 1.4A.

What is the maximum on-resistance of the SSM6K210FE?

The maximum drain-source on-resistance is 0.371 Ohms.

What type of transistor is the SSM6K210FE?

It is a general-purpose small signal N-Channel MOSFET.

What package is the SSM6K210FE supplied in?

It is supplied in an ES6, 2-2N1A, 6-pin small outline rectangular package for surface mounting.

SSM6K210FE Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
TPC8056-H
TPC8056-H
Toshiba
The Toshiba TPC8056-H is an N-Channel MOSFET with a 30V breakdown voltage and 18A maximum drain current. It is designed for switching applications.
View Part
TPC8086
TPC8086
Toshiba
The Toshiba TPC8086 is an N-channel MOSFET with a 30V breakdown voltage and a maximum drain current of 17A. It features a low on-resistance of 0.0085 ohms.
View Part
SI1022R
SI1022R
Vishay
The Vishay Dale SI1022R is an N-channel small signal MOSFET with a breakdown voltage of 60V and a maximum drain current of 330mA. It features a surface mountable SC-75A package.
View Part
Home

Categories